Tuning the thickness of black phosphorus via ion bombardment-free plasma etching for device performance improvement

2016 ◽  
Vol 4 (26) ◽  
pp. 6234-6239 ◽  
Author(s):  
Geonyeop Lee ◽  
Jong-Young Lee ◽  
Gwan-Hyoung Lee ◽  
Jihyun Kim
Keyword(s):  
Performance Improvement ◽  
Plasma Etching ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Ion Bombardment ◽  
Black Phosphorus ◽  
Device Performance ◽  
Free Plasma

Field-effect transistors based on thickness-controlled black phosphorus showed improved device performances after ion bombardment-free plasma etching.

Performance Improvement in Hydrogenated Few-Layer Black Phosphorus Field-Effect Transistors

2018 ◽  
Vol 35 (12) ◽  
pp. 127302
Author(s):  
He-Mei Zheng ◽  
Shun-Ming Sun ◽  
Hao Liu ◽  
Ya-Wei Huan ◽  
Jian-Guo Yang ◽  
...  
Keyword(s):  
Performance Improvement ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Black Phosphorus

scholarly journals Electrically Tunable Energy Bandgap in Dual-Gated Ultra-Thin Black Phosphorus Field Effect Transistors

2017 ◽  
Vol 34 (4) ◽  
pp. 047304 ◽  
Author(s):  
Shi-Li Yan ◽  
Zhi-Jian Xie ◽  
Jian-Hao Chen ◽  
Takashi Taniguchi ◽  
Kenji Watanabe
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Black Phosphorus ◽  
Energy Bandgap

scholarly journals Three-Dimensional Nanoscale Mapping of State-of-the-Art Field-Effect Transistors (FinFETs)

2017 ◽  
Vol 23 (5) ◽  
pp. 916-925
Author(s):  
Pritesh Parikh ◽  
Corey Senowitz ◽  
Don Lyons ◽  
Isabelle Martin ◽  
Ty J. Prosa ◽  
...  
Keyword(s):  
Field Effect ◽  
Focused Ion Beam ◽  
Field Effect Transistors ◽  
Ion Beam ◽  
Semiconductor Industry ◽  
Three Dimensional ◽  
Atom Probe ◽  
Physical Structure ◽  
Oxide Semiconductor ◽  
Device Performance

AbstractThe semiconductor industry has seen tremendous progress over the last few decades with continuous reduction in transistor size to improve device performance. Miniaturization of devices has led to changes in the dopants and dielectric layers incorporated. As the gradual shift from two-dimensional metal-oxide semiconductor field-effect transistor to three-dimensional (3D) field-effect transistors (finFETs) occurred, it has become imperative to understand compositional variability with nanoscale spatial resolution. Compositional changes can affect device performance primarily through fluctuations in threshold voltage and channel current density. Traditional techniques such as scanning electron microscope and focused ion beam no longer provide the required resolution to probe the physical structure and chemical composition of individual fins. Hence advanced multimodal characterization approaches are required to better understand electronic devices. Herein, we report the study of 14 nm commercial finFETs using atom probe tomography (APT) and scanning transmission electron microscopy–energy-dispersive X-ray spectroscopy (STEM-EDS). Complimentary compositional maps were obtained using both techniques with analysis of the gate dielectrics and silicon fin. APT additionally provided 3D information and allowed analysis of the distribution of low atomic number dopant elements (e.g., boron), which are elusive when using STEM-EDS.

scholarly journals Effects of Doping Concentration on Device Performance of GaN-based Nano-regime MOSFETs

2017 ◽  
Vol 16 (1) ◽  
pp. 69-74
Author(s):  
Md Iktiham Bin Taher ◽  
Md. Tanvir Hasan
Keyword(s):  
Field Effect ◽  
Doping Concentration ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Device Performance ◽  
Gate Length ◽  
Drain Voltage ◽  
Switching Device ◽  
Device Applications

Gallium nitride (GaN) based metal-oxide semiconductor field-effect transistors (MOSFETs) are promising for switching device applications. The doping of n- and p-layers is varied to evaluate the figure of merits of proposed devices with a gate length of 10 nm. Devices are switched from OFF-state (gate voltage, VGS = 0 V) to ON-state (VGS = 1 V) for a fixed drain voltage, VDS = 0.75 V. The device with channel doping of 1×1016 cm-3 and source/drain (S/D) of 1×1020 cm-3 shows good device performance due to better control of gate over channel. The ON-current (ION), OFF-current (IOFF), subthreshold swing (SS), drain induce barrier lowering (DIBL), and delay time are found to be 6.85 mA/μm, 5.15×10-7 A/μm, 87.8 mV/decade, and 100.5 mV/V, 0.035 ps, respectively. These results indicate that GaN-based MOSFETs are very suitable for the logic switching application in nanoscale regime.

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