Fabrication of highly oriented 4H-SiC gourd-shaped nanowire arrays and their field emission properties
2016 ◽
Vol 4
(23)
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pp. 5195-5201
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Keyword(s):
We reported the large-scale fabrication of highly oriented 4H-SiC gourd-shaped nanowire nanoarrays with a low turn-on field of 0.95 V μm−1.
2014 ◽
Vol 7
(1)
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pp. 526-533
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Keyword(s):
Keyword(s):
2008 ◽
Vol 43
(4)
◽
pp. 919-925
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Keyword(s):
Keyword(s):
Keyword(s):