Robust room-temperature inversion-asymmetry topological transitions in functionalized HgSe monolayer

2016 ◽  
Vol 4 (11) ◽  
pp. 2243-2251 ◽  
Author(s):  
Sheng-shi Li ◽  
Wei-xiao Ji ◽  
Chang-wen Zhang ◽  
Ping Li ◽  
Pei-ji Wang
Keyword(s):  
Electric Field ◽  
Room Temperature ◽  
Temperature Inversion ◽  
Strain Engineering ◽  
Spin Splitting ◽  
Topological Phase ◽  
Rashba Spin ◽  
Band Inversion ◽  
Rashba Spin Splitting ◽  
Inversion Asymmetry

Nontrivial topological phase can be confirmed in HgSeI2monolayer with typical band inversion and sizable Rashba spin splitting, which possesses excellent robustness against strain engineering and external electric field.

scholarly journals Nonreciprocal charge transport up to room temperature in bulk Rashba semiconductor α-GeTe

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Yan Li ◽  
Yang Li ◽  
Peng Li ◽  
Bin Fang ◽  
Xu Yang ◽  
...  
Keyword(s):  
Charge Transport ◽  
Room Temperature ◽  
Theoretical Calculations ◽  
Ferromagnetic Layer ◽  
Spin Splitting ◽  
New Paradigm ◽  
Rashba Spin ◽  
Rashba Spin Splitting ◽  
Fundamental Insight ◽  
Insight Into

AbstractNonmagnetic Rashba systems with broken inversion symmetry are expected to exhibit nonreciprocal charge transport, a new paradigm of unidirectional magnetoresistance in the absence of ferromagnetic layer. So far, most work on nonreciprocal transport has been solely limited to cryogenic temperatures, which is a major obstacle for exploiting the room-temperature two-terminal devices based on such a nonreciprocal response. Here, we report a nonreciprocal charge transport behavior up to room temperature in semiconductor α-GeTe with coexisting the surface and bulk Rashba states. The combination of the band structure measurements and theoretical calculations strongly suggest that the nonreciprocal response is ascribed to the giant bulk Rashba spin splitting rather than the surface Rashba states. Remarkably, we find that the magnitude of the nonreciprocal response shows an unexpected non-monotonical dependence on temperature. The extended theoretical model based on the second-order spin–orbit coupled magnetotransport enables us to establish the correlation between the nonlinear magnetoresistance and the spin textures in the Rashba system. Our findings offer significant fundamental insight into the physics underlying the nonreciprocity and may pave a route for future rectification devices.

Electric field control of Rashba spin splitting in 2D NIIIXVI (N  =  Ga, In; X  =  S, Se, Te) monolayer

2020 ◽  
Vol 32 (17) ◽  
pp. 175503 ◽  
Author(s):  
Weiwei Ju ◽  
Donghui Wang ◽  
Tongwei Li ◽  
Hui Wang ◽  
Qingxiao Zhou ◽  
...  
Keyword(s):  
Electric Field ◽  
Spin Splitting ◽  
Rashba Spin ◽  
Rashba Spin Splitting ◽  
Field Control

Rashba Spin-Splitting and Spin Currents in GaN Heterojunctions

2007 ◽  
Vol 999 ◽  
Author(s):  
Wolfgang Weber ◽  
Simon Seidl ◽  
Leonid E. Golub ◽  
Sergey N. Danilov ◽  
Vasily V. Bel'kov ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Curie Temperature ◽  
Spin Relaxation ◽  
Room Temperature ◽  
Relaxation Times ◽  
Spin Splitting ◽  
Material System ◽  
Spin Currents ◽  
Rashba Spin ◽  
Rashba Spin Splitting

AbstractGallium nitride is a potentially interesting material system for Spintronics since it is expected to become ferromagnetic with a Curie-temperature above room temperature if doped with manganese and long spin relaxation times are detected in this material.

Anti-Weak-Localization Study of Rashba Spin-Splitting Energy as a Function of Well Asymmetry in InAlAs/InGaAs/InAlAs Quantum Wells

2001 ◽  
Vol 690 ◽  
Author(s):  
Takaaki Koga ◽  
Junsaku Nitta ◽  
Tatsushi Akazaki ◽  
Hideaki Takayanagi
Keyword(s):  
Quantum Wells ◽  
Weak Localization ◽  
Spin Splitting ◽  
Strong Correlations ◽  
Coupling Constant ◽  
Rashba Spin ◽  
Rashba Spin Splitting ◽  
Structural Inversion ◽  
Splitting Energy ◽  
Inversion Asymmetry

ABSTRACTWe have investigated the values of the Rashba spin-orbit coupling constant α in In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As quantum wells using an anti-weak-localization (AWL) analysis as a function of quantum well asymmetry. We have found that the deduced α values have strong correlations with the structural inversion asymmetry of the pertinent quantum wells as predicted theoretically. This fact suggests that the AWL analysis provides a reliable way to deduce α values experimentally for designing future spintronics devices.

Controlling Rashba spin splitting in Au(111) surface states through electric field

2013 ◽  
Vol 87 (3) ◽  
Author(s):  
Shi-Jing Gong ◽  
Chun-Gang Duan ◽  
Yan Zhu ◽  
Zi-Qiang Zhu ◽  
Jun-Hao Chu
Keyword(s):  
Electric Field ◽  
Surface States ◽  
Spin Splitting ◽  
Rashba Spin ◽  
Rashba Spin Splitting

First-principles prediction of inversion-asymmetric topological insulator in hexagonal BiPbH monolayer

2016 ◽  
Vol 4 (37) ◽  
pp. 8750-8757 ◽  
Author(s):  
Yi-zhen Jia ◽  
Wei-xiao Ji ◽  
Chang-wen Zhang ◽  
Ping Li ◽  
Miao-juan Ren ◽  
...  
Keyword(s):  
Topological Insulator ◽  
First Principles ◽  
Condensed Matter ◽  
Spin Splitting ◽  
Condensed Matter Physics ◽  
Rashba Spin ◽  
Rashba Spin Splitting

Band topology and Rashba spin splitting (RSS) are two extensively explored yet exotic properties in condensed matter physics.

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