A ZnS and metal hydroxide composite passivation layer for recombination control in high efficiency quantum dot sensitized solar cells

2016 ◽  
Vol 4 (48) ◽  
pp. 18976-18982 ◽  
Author(s):  
Zhenxiao Pan ◽  
Xinhua Zhong
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
High Efficiency ◽  
Charge Recombination ◽  
Metal Hydroxide ◽  
Passivation Layer ◽  
Sensitized Solar Cells

An effective composite passivation layer was developed for suppressing charge recombination and improving the performance of QDSCs.

scholarly journals ZnS/SiO2 Passivation Layer for High-Performance of TiO2/CuInS2 Quantum Dot Sensitized Solar Cells

Energies ◽  
2018 ◽  
Vol 11 (8) ◽  
pp. 1931
Author(s):  
Hee-Je Kim ◽  
Jin-Ho Bae ◽  
Hyunwoong Seo ◽  
Masaharu Shiratani ◽  
Chandu Venkata Veera Muralee Gopi
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
High Performance ◽  
Open Circuit Voltage ◽  
Charge Recombination ◽  
Open Circuit ◽  
Passivation Layer ◽  
Voltage Decay ◽  
Sensitized Solar Cells ◽  
Η Value

Suppressing the charge recombination at the interface of photoanode/electrolyte is the crucial way to improve the quantum dot sensitized solar cells (QDSSCs) performance. In this scenario, ZnS/SiO2 blocking layer was deposited on TiO2/CuInS2 QDs to inhibit the charge recombination at photoanode/electrolyte interface. As a result, the TiO2/CuInS2/ZnS/SiO2 based QDSSCs delivers a power conversion efficiency (η) value of 4.63%, which is much higher than the TiO2/CuInS2 (2.15%) and TiO2/CuInS2/ZnS (3.23%) based QDSSCs. Impedance spectroscopy and open circuit voltage decay analyses indicate that ZnS/SiO2 passivation layer on TiO2/CuInS2 suppress the charge recombination at the interface of photoanode/electrolyte and enhance the electron lifetime.

High performance of TiO2/CdS quantum dot sensitized solar cells with a Cu–ZnS passivation layer

2017 ◽  
Vol 41 (5) ◽  
pp. 1914-1917 ◽  
Author(s):  
Young-Seok Lee ◽  
Chandu V. V. M. Gopi ◽  
Araveeti Eswar Reddy ◽  
Chandu Nagaraju ◽  
Hee-Je Kim
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
High Performance ◽  
Light Harvesting ◽  
Charge Recombination ◽  
Passivation Layer ◽  
Cds Quantum Dot ◽  
Sensitized Solar Cells

A Cu–ZnS passivation layer effectively suppresses the charge recombination and increases the light harvesting in QDSSCs.

Poly(vinyl pyrrolidone): a superior and general additive in polysulfide electrolytes for high efficiency quantum dot sensitized solar cells

2016 ◽  
Vol 4 (29) ◽  
pp. 11416-11421 ◽  
Author(s):  
Guocan Jiang ◽  
Zhenxiao Pan ◽  
Zhenwei Ren ◽  
Jun Du ◽  
Cheng Yang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
High Efficiency ◽  
Photovoltaic Performance ◽  
Charge Recombination ◽  
Vinyl Pyrrolidone ◽  
Polysulfide Electrolyte ◽  
Poly Vinyl Pyrrolidone ◽  
Sensitized Solar Cells

Poly(vinyl pyrrolidone) (PVP) was used as a superior and general additive to modify the traditional polysulfide electrolyte in quantum dot sensitized solar cells and the photovoltaic performance of the constructed solar cells was significantly improved benefiting from the reduced charge recombination.

ZnSxSe1–x Alloy Passivation Layer for High-Efficiency Quantum-Dot-Sensitized Solar Cells

2019 ◽  
Vol 11 (44) ◽  
pp. 41415-41423 ◽  
Author(s):  
Linlin Zhang ◽  
Huashang Rao ◽  
Zhenxiao Pan ◽  
Xinhua Zhong
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
High Efficiency ◽  
Passivation Layer ◽  
Sensitized Solar Cells

scholarly journals ZnS/SiO2 Passivation Layer for High-Performance of TiO2/CuInS2 Quantum Dot Sensitized Solar Cells

2018 ◽  
Author(s):  
Hee-Je Kim ◽  
Jin-Ho Bae ◽  
Hyunwoong Seo ◽  
Masaharu Shiratani ◽  
Chandu Venkata Veera Muralee Gopi
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
High Performance ◽  
Electrochemical Impedance ◽  
Photovoltaic Performance ◽  
Charge Recombination ◽  
Open Circuit ◽  
Passivation Layer ◽  
Electrolyte Interface ◽  
Sensitized Solar Cells

Suppressing the charge recombination at the interface of photoanode/electrolyte is the crucial way to enhance the photovoltaic performance of quantum dot sensitized solar cells (QDSSCs). In this scenario, ZnS/SiO2 blocking layer was deposited on TiO2/CuInS2 QDs to inhibit the charge recombination at photoanode/electrolyte interface. As a result, the TiO2/CuInS2/ZnS/SiO2 based QDSSCs delivers a power conversion efficiency (η) value of 4.63%, which is significantly higher than the 2.15% and 3.23% observed for QDSSCs with a TiO2/CuInS2 device and TiO2/CuInS2/ZnS, respectively. Electrochemical impedance spectroscopy and open circuit voltage decay analyses indicate that ZnS/SiO2 passivation layer on TiO2/CuInS2 suppress the charge recombination at the photoanode/electrolyte interface and prolongs the electron lifetime.

Charge recombination control for high efficiency CdS/CdSe quantum dot co-sensitized solar cells with multi-ZnS layers

2018 ◽  
Vol 47 (7) ◽  
pp. 2214-2221 ◽  
Author(s):  
Qiang Wu ◽  
Juan Hou ◽  
Haifeng Zhao ◽  
Zhiyong Liu ◽  
Xuanyu Yue ◽  
...  
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
Power Conversion Efficiency ◽  
Conversion Efficiency ◽  
High Efficiency ◽  
Power Conversion ◽  
Charge Recombination ◽  
Cdse Quantum Dot ◽  
Sensitized Solar Cells

ZnS as an inorganic passivation agent has been proven to be effective in suppressing charge recombination and enhancing power conversion efficiency (PCE) in quantum dot-sensitized solar cells (QDSCs).

Phosphating passivation layer for quantum dot sensitized solar cells

2021 ◽  
Vol 727 ◽  
pp. 138678
Author(s):  
Mei Xin Chen ◽  
Ya Qian Bai ◽  
Xin Na Guan ◽  
Jia Wei Chen ◽  
Jing Hui Zeng
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
Passivation Layer ◽  
Sensitized Solar Cells
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