Thermoelectric properties of bromine filled CoSb3 skutterudite

2016 ◽  
Vol 4 (21) ◽  
pp. 8444-8450 ◽  
Author(s):  
Brenden R. Ortiz ◽  
Caitlin M. Crawford ◽  
Robert W. McKinney ◽  
Philip A. Parilla ◽  
Eric S. Toberer
Keyword(s):  
Thermal Conductivity ◽  
Carrier Concentration ◽  
Thermoelectric Properties ◽  
High Mobility

Bromine incorporation into the skutterudite structure simultaneously lowers the thermal conductivity, tunes the carrier concentration, and preserves the high mobility of the native compound.

Thermoelectric Properties of n-type (Bi2Se3)x(Bi2Te3)1-x Crystals Prepared by Zone Melting

2008 ◽  
Vol 368-372 ◽  
pp. 547-549
Author(s):  
Jun Jiang ◽  
Ya Li Li ◽  
Gao Jie Xu ◽  
Ping Cui ◽  
Li Dong Chen
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Carrier Concentration ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Zone Melting ◽  
Chemical Compositions ◽  
Melting Method ◽  
Temperature Range

In the present study, n-type (Bi2Se3)x(Bi2Te3)1-x crystals with various chemical compositions were fabricated by the zone melting method. Thermoelectric properties, including Seebeck coefficient (α), electrical conductivity (σ) and thermal conductivity (κ), were measured in the temperature range of 300-500 K. The influence of the variations of Bi2Te3 and Bi2Se3 content on thermoelectric properties was studied. The increase of Bi2Se3 content (x) caused an increase in carrier concentration and thus an increase of σ and a decrease of α. The maximum figure of merit (ZT = α2σT/κ) of 0.87 was obtained at about 325 K for the composition of 93%Bi2Te3-7%Bi2Se3 with doping TeI4.

Thermoelectric Properties of Solid-State Synthesized Magnesium Silicides Doped with Group BI-III Elements

2012 ◽  
Vol 724 ◽  
pp. 385-388 ◽  
Author(s):  
Sin Wook You ◽  
Soon Mok Choi ◽  
Won Seon Seo ◽  
Sun Uk Kim ◽  
Kyung Wook Jang ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Solid State ◽  
Mechanical Alloying ◽  
Carrier Concentration ◽  
Thermoelectric Properties ◽  
Solid State Reaction ◽  
Figure Of Merit ◽  
Lattice Thermal Conductivity ◽  
Group B

Group BI(Cu, Ag)-, BII(Zn)- and BIII(Al, In)-doped Mg2Si compounds were synthesized by solid state reaction and mechanical alloying. Electronic transport properties (Hall coefficient, carrier concentration and mobility) and thermoelectric properties (Seebeck coefficient, electrical conductivity, power factor, thermal conductivity and figure of merit) were examined. Mg2Si powder was synthesized successfully by solid state reaction at 773 K for 6 h and doped by mechanical alloying for 24 h. It was fully consolidated by hot pressing at 1073 K for 1 h. The electrical conductivity increased by doping due to an increase in the carrier concentration. However, the thermal conductivity did not changed significantly by doping, which was due to much larger contribution of the lattice thermal conductivity over the electronic thermal conductivity. Group BIII(Al, In) elements were more effective to enhance the thermoelectric properties of Mg2Si.

Enhancement of thermoelectric properties by Na doping in Te-free p-type AgSbSe2

2015 ◽  
Vol 44 (3) ◽  
pp. 1046-1051 ◽  
Author(s):  
Songting Cai ◽  
Zihang Liu ◽  
Jianyong Sun ◽  
Rui Li ◽  
Weidong Fei ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Carrier Concentration ◽  
Thermoelectric Properties ◽  
Point Defects ◽  
Power Factor ◽  
Stacking Faults ◽  
Na Doping ◽  
P Type

Na substituting Sb in the AgSbSe2 not only improves the power factor caused by the enhanced carrier concentration, but also decreases the thermal conductivity due to point defects, nanoscale stacking faults and Na-rich precipitate. Consequently, a high ZT value of 0.92 is achieved in the AgSb0.99Na0.01Se2 sample.

scholarly journals Improving the Thermoelectric Properties of the Half-Heusler Compound VCoSb by Vanadium Vacancy

Materials ◽  
2019 ◽  
Vol 12 (10) ◽  
pp. 1637 ◽  
Author(s):  
Lihong Huang ◽  
Junchen Wang ◽  
Xiaobo Mo ◽  
Xiaobo Lei ◽  
Sude Ma ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Seebeck Coefficient ◽  
Carrier Concentration ◽  
Thermoelectric Properties ◽  
Power Factor ◽  
Secondary Phase ◽  
Thermoelectric Performance ◽  
Heusler Compound

The effects of V vacancy on the thermoelectric performance of the half-Heusler compound VCoSb have been investigated in this study. A certain amount of CoSb secondary phase is generated in the VCoSb matrix when the content of V vacancy is more than 0.1 at%. According to the results, a ZT value of 0.6, together with a power factor of 29 μW cm−1 K−2 at 873 K, were achieved for the nonstoichiometric sample V0.9CoSb. This proved that moderate V vacancy could improve the thermoelectric (TE) properties of VCoSb. The noticeable improvements are mainly owing to the incremental Seebeck coefficient, which may benefit from the optimized carrier concentration. However, too much V vacancy will result in more CoSb impurity and deteriorate the TE performances of VCoSb owing to the increased thermal conductivity.

scholarly journals Thermoelectric Properties of Bi2Te3: CuI and the Effect of Its Doping with Pb Atoms

2017 ◽  
Author(s):  
Mi-Kyung Han ◽  
Yingshi Jin ◽  
Da-Hee Lee ◽  
Sung-Jin Kim
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Transport Properties ◽  
Carrier Concentration ◽  
Thermoelectric Properties ◽  
Thermal Transport ◽  
Co Doping ◽  
Thermal Transport Properties ◽  
Co Doped

In order to understand the effect of Pb-CuI co-doping on the thermoelectric performance of Bi2Te3, n-type Bi2Te3 co-doped with x at% CuI and 1/2x at% Pb (x = 0, 0.01, 0.03, 0.05, 0.07, and 0.10) were prepared via high temperature solid state reaction and consolidated using spark plasma sintering. Electron and thermal transport properties, i.e., electrical conductivity, carrier concentration, Hall mobility, Seebeck coefficient, and thermal conductivity, of CuI-Pb co-doped Bi2Te3 were measured in the temperature range from 300 K to 523 K and compared to corresponding x% of CuI-doped Bi2Te3 and undoped Bi2Te3. The addition of a small amount of Pb significantly decreased the carrier concentration, which could be attributed to the holes from Pb atoms, thus the CuI-Pb co-doped samples show a lower electrical conductivity and a higher Seebeck coefficient compared to CuI-doped samples with similar x values. The incorporation of Pb into CuI-doped Bi2Te3 rarely changed the power factor because of the trade-off relationship between the electrical conductivity and the Seebeck coefficient. The total thermal conductivity(κtot) of co-doped samples (κtot ~1.4 W/m∙K at 300 K) is slightly lower than that of 1% CuI-doped Bi2Te3 (κtot~1.5 W/m∙K at 300 K) and undoped Bi2Te3 (κtot ~1.6 W/m∙K at 300 K) due to the alloy scattering. The 1% CuI-Pb co-doped Bi2Te3 sample shows the highest ZT value of 0.96 at 370 K. All data on electrical and thermal transport properties suggest that the thermoelectric properties of Bi2Te3 and its operating temperature can be controlled by co-doping.

Thermoelectric Properties of Zn4-xSb3 with x=0~0.5

2007 ◽  
Vol 124-126 ◽  
pp. 1019-1022 ◽  
Author(s):  
K.W. Jang ◽  
Il Ho Kim ◽  
Jung Il Lee ◽  
Good Sun Choi
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
Seebeck Coefficient ◽  
Temperature Dependence ◽  
Carrier Concentration ◽  
Thermoelectric Properties ◽  
Hall Mobility ◽  
Room Temperature ◽  
Vacuum Melting ◽  
Increasing Temperature

Non-stoichiometric Zn4-xSb3 compounds with x=0~0.5 were prepared by vacuum melting at 1173K and annealing solidified ingots at 623K. Electrical resistivity and Seebeck coefficient at 450K increased from 1.8cm and 145K-1 for Zn4Sb3(x=0) to 56.2cm 350K-1 for Zn3.5Sb3(x=0.5) due to the decrease of the carrier concentration. Hall mobility and carrier concentration was 31.5cm2V-1s-1 and 1.32X1020cm-3 for Zn4Sb3 and 70cm2V-1s-1 and 2.80X1018cm-3 for Zn3.5Sb3. Electrical resistivity of Zn4-xSb3 with x=0~0.2 showed linearly increasing temperature dependence, whereas those of Zn4-xSb3 with x=0.3~0.5 above 450 K tended to decrease. Thermal conductivity of Zn4Sb3 was 8.5mWcm-1K-1 at room temperature and that of Zn4-xSb3 with x≥0.3 was around 11mWcm-1K-1. Maximum ZT of Zn4Sb3 was obtained around 1.3 at 600K. Zn4Sb3 with x=0.3~0.5 showed very small value of ZT=0.2~0.3.

Enhanced Thermoelectric Properties of FeSbx Nanocomposites Through Stoichiometric Adjustment

2012 ◽  
Vol 1456 ◽  
Author(s):  
Mani Pokharel ◽  
Huaizhou Zhao ◽  
Kevin Lukas ◽  
Zhifeng Ren ◽  
Cyril Opeil
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
Seebeck Coefficient ◽  
Carrier Concentration ◽  
Thermoelectric Properties ◽  
Power Factor ◽  
Hall Coefficient

ABSTRACTThe Seebeck coefficient, electrical resistivity, thermal conductivity and Hall coefficient of FeSbx (x = 2.04, 2.00, and 1.96) nanocomposites hot pressed at 300 °C were measured. The power factor of FeSb1.96 was increased by 105% compared to FeSb2. Hall coefficient measurements revealed a decreased carrier concentration and increased mobility in FeSb1.96 with an overall enhancement in ZTof 45% in FeSb1.96 .

High Thermoelectric Performance of p-Type Bi0.5Sb1.5Te3+xTe Crystals Prepared via Gradient Freezing

2012 ◽  
Vol 621 ◽  
pp. 167-171
Author(s):  
Tao Hua Liang ◽  
Shi Qing Yang ◽  
Zhi Chen ◽  
Qing Xue Yang
Keyword(s):  
Thermal Conductivity ◽  
Seebeck Coefficient ◽  
Carrier Concentration ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Thermoelectric Performance ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
P Type

p-type Bi0.5Sb1.5Te3+xTe thermoelectric crystals with various percentages of Te (x = 0.00 wt.%–3.00 wt.%) excess were prepared by the gradient freeze method. By doping with different Te contents, anti-site defects, Te vacancies and hole carrier concentrations were controlled. The Seebeck coefficient, resistivity, thermal conductivity, carrier concentration, and mobility were measured. The relationships between the Te content and thermoelectric properties were investigated in detail. The results suggested that the thermoelectric figure of merit ZT of the Bi0.5Sb1.5Te3+0.09wt.% crystals was 1.36 near room temperature, the optimum carrier concentration was 1.25 × 1019 cm-3, and the mobility was 1480 cm2 V-1 S-1, respectively.

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