scholarly journals Synthesis of new conjugated polymers with coordinated praseodymium complexes for polymer memory devices

RSC Advances ◽  
2017 ◽  
Vol 7 (30) ◽  
pp. 18384-18391 ◽  
Author(s):  
Wei Lv ◽  
Huijiao Liu ◽  
Wen Wang ◽  
E. Yang ◽  
Hongyu Zhen ◽  
...  
Keyword(s):  
Conjugated Polymers ◽  
Memory Device ◽  
Device Performance ◽  
Memory Devices ◽  
Polymer Memory

A series of novel praseodymium(Pr)-coordinated polymers with phthalimide moieties were synthesized. The effects of the phthalimide moiety and neutral Pr complex on the polymer memory device performance were investigated.

A star polymer with a metallo-phthalocyanine core as a tunable charge storage material for nonvolatile transistor memory devices

2018 ◽  
Vol 6 (11) ◽  
pp. 2724-2732 ◽  
Author(s):  
Junko Aimi ◽  
Po-Hung Wang ◽  
Chien-Chung Shih ◽  
Chih-Feng Huang ◽  
Takashi Nakanishi ◽  
...  
Keyword(s):  
Memory Device ◽  
Star Polymer ◽  
Charge Storage ◽  
Device Performance ◽  
Memory Devices ◽  
Storage Material ◽  
Novel Strategy ◽  
A Charge

A novel strategy to control the OFET memory device performance has been demonstrated using a metallophthalocyanine-cored star-shaped polystyrene as a charge storage material.

Design and synthesis of conjugated polymers containing Pt(ii) complexes in the side-chain and their application in polymer memory devices

2012 ◽  
Vol 22 (19) ◽  
pp. 9576 ◽  
Author(s):  
Peng Wang ◽  
Shu-Juan Liu ◽  
Zhen-Hua Lin ◽  
Xiao-Chen Dong ◽  
Qiang Zhao ◽  
...  
Keyword(s):  
Conjugated Polymers ◽  
Side Chain ◽  
Memory Devices ◽  
Design And Synthesis ◽  
Polymer Memory

New MEH-PPV Based Composite Materials for Rewritable Nonvolatile Polymer Memory Devices

2011 ◽  
Vol 1337 ◽  
Author(s):  
Mikhail Dronov ◽  
Ivan Belogorohov ◽  
Dmitry Khokhlov
Keyword(s):  
Composite Material ◽  
Composite Materials ◽  
Resistive Switching ◽  
Memory Performance ◽  
Memory Device ◽  
Memory Devices ◽  
Electrical Behavior ◽  
Aluminum Phthalocyanine ◽  
Behavior Based ◽  
Polymer Memory

ABSTRACTWe present the memory performance of devices with bistable electrical behavior based on MEH-PPV (Poly (1-methoxy-4-(2-ethylhexyloxy)-p-phenylenevinylene)) containing metal (Zn or Fe-Ni) particles. Another memory device based on aluminum phthalocyanine chloride (PcAlCl) added to the composite material reveals the photoinduced switching, in addition to the electrical one. Possible mechanisms for resistive switching are discussed.

Switching in Polymer Memory Devices Based on Polymer and Nanoparticles Admixture

2014 ◽  
Vol 95 ◽  
pp. 107-112
Author(s):  
Z.H. Alhalafi ◽  
Shashi Paul
Keyword(s):  
Electrical Conductivity ◽  
Metal Oxides ◽  
Memory Device ◽  
Memory Devices ◽  
Back Contact ◽  
Metal Insulator ◽  
Non Volatile Memory ◽  
Display Memory ◽  
Mis Devices ◽  
Polymer Memory

In this paper, a non-volatile memory device based on a blend of metal oxides (Known as NiO) and polymer has been investigated. These devices have shown to display memory effects; a marked difference in electrical conductivity between the ‘on’ and ‘off’ states. However, the exact mechanism under-pinning these two conductivities states are not very clear. The structures used in investigation are metal-admixture-metal (MAM) and metal-insulator-semiconductor (MIS) devices. Also, glass and p-types silicon (100 orientations) with a pre-prepared Ohmic back contact were used for the MAM and MIS substrates respectively. This work will address some of the questions in regard to the electrical bistability shown by polymer memory devices.

Polypyridyl chromium(iii) complexes for non-volatile memory application: impact of the coordination sphere on memory device performance

2018 ◽  
Vol 6 (6) ◽  
pp. 1445-1450 ◽  
Author(s):  
Balamurugan Kandasamy ◽  
Ganesamoorthi Ramar ◽  
Li Zhou ◽  
Su-Ting Han ◽  
Shishir Venkatesh ◽  
...  
Keyword(s):  
Coordination Sphere ◽  
Molecular Design ◽  
Memory Device ◽  
Device Performance ◽  
Memory Devices ◽  
Non Volatile Memory ◽  
Volatile Memory

To gain insights into the molecular design, the memory devices of various Cr(iii) complexes have been studied.

Tunable Quantum Confinement Effect on Non-volatile Thin Film Polymer Memory Device

2008 ◽  
Author(s):  
Augustin J. Hong ◽  
Kang L. Wang ◽  
Wei Lek Kwan ◽  
Yang Yang ◽  
Dayanara Parra ◽  
...  
Keyword(s):  
Thin Film ◽  
Quantum Confinement ◽  
Quantum Confinement Effect ◽  
Memory Device ◽  
Confinement Effect ◽  
Film Polymer ◽  
Polymer Memory

A self-assembling amphiphilic perylene bisimide and its application for WORM memory devices

2016 ◽  
Vol 40 (10) ◽  
pp. 8886-8891 ◽  
Author(s):  
Junfeng Li ◽  
Chenglong Yang ◽  
Ying Chen ◽  
Wen-Yong Lai
Keyword(s):  
Memory Device ◽  
Memory Devices ◽  
Perylene Bisimide ◽  
Self Assembling ◽  
External Stimuli

Morphologies of the amphiphilic perylene bisimide assemblies were controlled and switched by external stimuli to afford a good-performance WORM memory device.

Semiconductor Nanocrystal Floating-gate Memory Devices

2004 ◽  
Vol 830 ◽  
Author(s):  
P. Dimitrakis ◽  
P. Normand
Keyword(s):  
Low Voltage ◽  
Ion Beam ◽  
Low Energy ◽  
Floating Gate ◽  
Device Performance ◽  
Memory Devices ◽  
Research Directions ◽  
Semiconductor Nanocrystal ◽  
Floating Gate Memory ◽  
Attractive Option

ABSTRACTCurrent research directions and recent advances in the area of semiconductor nanocrystal floating-gate memory devices are herein reviewed. Particular attention is placed on the advantages, limitations and perspectives of some of the principal new alternatives suggested for improving device performance and reliability. The attractive option of generating Si nanocrystal memories by ion-beam-synthesis (IBS) is discussed with emphasis on the ultra-low-energy (ULE) regime. Pertinent issues related to the fabrication of low-voltage memory cells and the integration of the ULE-IBS technique in manufactory environment are discussed. The effect on device performance of parasitic transistors that form at the channel corner of shallow trench isolated transistors is described in details. It is shown that such parasitic transistors lead to a substantial degradation of the electrical properties of the intended devices and dominates the memory behavior of deep submicronic cells.

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