Porous silicon–polyaniline hybrid composites synthesized through electroreduction of an aryldiazonium salt: preparation and photocurrent properties

RSC Advances ◽  
2016 ◽  
Vol 6 (104) ◽  
pp. 101880-101887 ◽  
Author(s):  
Mariavitalia Tiddia ◽  
Guido Mula ◽  
Michele Mascia ◽  
Elisa Sechi ◽  
Annalisa Vacca
Keyword(s):  
Porous Silicon ◽  
Hybrid Composites ◽  
Porous Si ◽  
Aryldiazonium Salt ◽  
Polyaniline Composites

Porous Si–polyaniline composites were realized by electropolymerization with an underlayer of phenylamine. The composite showed photocurrent properties higher than those of porous Si or Si–polyaniline composites realized without underlayer.

scholarly journals Sensory properties of hybrid composites based on poly(3,4-ethylenedioxythiophene)-porous silicon-carbon nanotubes

2015 ◽  
Vol 10 (1) ◽  
Author(s):  
Igor B Olenych ◽  
Olena I Aksimentyeva ◽  
Liubomyr S Monastyrskii ◽  
Yulia Yu Horbenko ◽  
Lidia I Yarytska
Keyword(s):  
Carbon Nanotubes ◽  
Porous Silicon ◽  
Hybrid Composites ◽  
Sensory Properties ◽  
Silicon Carbon

Enhancement of efficiency in graphene/porous silicon solar cells by co-doping graphene with gold nanoparticles and bis(trifluoromethanesulfonyl)-amide

2017 ◽  
Vol 5 (35) ◽  
pp. 9005-9011 ◽  
Author(s):  
Ju Hwan Kim ◽  
Dong Hee Shin ◽  
Ha Seung Lee ◽  
Chan Wook Jang ◽  
Jong Min Kim ◽  
...  
Keyword(s):  
Gold Nanoparticles ◽  
Solar Cells ◽  
Porous Silicon ◽  
Au Nanoparticles ◽  
Silicon Solar Cells ◽  
Porous Si ◽  
Co Doping ◽  
Si Solar Cells ◽  
First Time

The co-doping of graphene with Au nanoparticles and bis(trifluoromethanesulfonyl)-amide is employed for the first time to enhance the performance of graphene/porous Si solar cells.

Visible Electro- and Photoluminescence from Porous Silicon and its Related Optoelectronic Properties

1991 ◽  
Vol 256 ◽  
Author(s):  
Nobuyoshi Koshida ◽  
Hideki Koyama
Keyword(s):  
Porous Silicon ◽  
Optical Absorption ◽  
Size Effect ◽  
Band Gap ◽  
Visible Region ◽  
Optoelectronic Properties ◽  
Porous Si ◽  
Quantum Size ◽  
Effect Model ◽  
Injection Type

ABSTRACTThe optoelectronic properties of porous Si (PS) are presented in terms of electroluminescence (EL), photoluminescence (PL), photoconduction (PC), and optical absorption. Observations of injection-type EL, efficient PL, band-gap widening, and photosensitivities In the visible region are consistent with the quantum size effect model in PS.

scholarly journals Morphology and FT IR spectra of porous silicon

2017 ◽  
Vol 68 (7) ◽  
pp. 53-57 ◽  
Author(s):  
Martin Kopani ◽  
Milan Mikula ◽  
Daniel Kosnac ◽  
Jan Gregus ◽  
Emil Pincik
Keyword(s):  
Porous Silicon ◽  
Ir Spectra ◽  
Silicon Layer ◽  
Porous Silicon Layer ◽  
Layer Formation ◽  
Porous Si ◽  
Ft Ir ◽  
P Type ◽  
Type Sample ◽  
Ftir Investigation

AbstractThe morphology and chemical bods of p-type and n-type porous Si was compared. The surface of n-type sample is smooth, homogenous without any features. The surface of p-type sample reveals micrometer-sized islands. FTIR investigation reveals various distribution of SiOxHycomplexes in both p-and n-type samples. From the conditions leading to porous silicon layer formation (the presence of holes) we suggest both SiOxHyand SiFxHycomplexes in the layer.

Gas Sensor Using an Aluminium-Porous Silicon Junction Application to the Detection of Non-Zero Molecular Dipole Moment

1994 ◽  
Vol 358 ◽  
Author(s):  
D. Stievenard ◽  
D. Deresmes
Keyword(s):  
Dipole Moment ◽  
Porous Silicon ◽  
Silicon Oxide ◽  
Surface States ◽  
Dangling Bonds ◽  
Porous Si ◽  
Adsorbed Gas ◽  
Dipole Layer ◽  
Dc Current ◽  
Partial Depletion

ABSTRACTPorous silicon is known to be sensitive to moisture. Using an aluminium-porous p+ silicon junction, we have realized a sensor which dc current increases up to two orders of magnitude in the presence of ammoniac. We have tested a series of various gases and we show that if the dipole moment of the molecule is zero, there is no effect on the dc current. To interpret quantitatively this phenomenon, we assume that the conductivity is governed by the width of a channel resulting from the partial depletion of silicon located between two pores. This depleted region is due to the charges trapped on surface states associated with the Si-SiO2 interface where SiO2 is the native silicon oxide. When some gas is adsorbed, we propose there is a passivation of the interface states (mainly dangling bonds), leading to a decrease of the depleted region, i.e. an increase of the width of the channel and thus an increase of the current. The adsorbed gas gives a dipole layer at the surface of the pore. This layer has no influence on the depleted region. It stabilizes electrons or holes at the porous Si surface, allowing a stable charge state of the dangling bonds.

Lithium effect on the electronic properties of porous silicon for energy storage applications: a DFT study

2018 ◽  
Vol 47 (22) ◽  
pp. 7505-7514 ◽  
Author(s):  
I. González ◽  
A. N. Sosa ◽  
A. Trejo ◽  
M. Calvino ◽  
A. Miranda ◽  
...  
Keyword(s):  
Energy Storage ◽  
Porous Silicon ◽  
Electronic Properties ◽  
Theoretical Study ◽  
Dft Study ◽  
Porous Si ◽  
Energy Storage Applications

A theoretical study on the effect of Li on the electronic properties of porous Si; these properties change drastically if the Li is superficial or interstitial.

High performance of porous silicon/carbon/RGO network derived from rice husks as anodes for lithium-ion batteries

2018 ◽  
Vol 42 (24) ◽  
pp. 19811-19817 ◽  
Author(s):  
Kaifeng Yu ◽  
Hanxiang Zhang ◽  
Hui Qi ◽  
Jicai Liang ◽  
Ce Liang
Keyword(s):  
Porous Silicon ◽  
Lithium Ion Batteries ◽  
High Performance ◽  
Lithium Ion ◽  
Reduction Reaction ◽  
Magnesiothermic Reduction ◽  
Rice Husks ◽  
Porous Si ◽  
Silicon Carbon ◽  
Battery Anode

Rice husk-derived porous Si/C synthesized via activation and magnesiothermic reduction reaction possesses excellent electrochemistry performance as a lithium-ion battery anode.

Growth of Germanium on Porous Silicon (001)

1996 ◽  
Vol 452 ◽  
Author(s):  
W. H. Thompson ◽  
Z. Yamani ◽  
H. M. Nayfeh ◽  
M.-A. Hasan ◽  
J. E. Greene ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Atomic Force Microscopy ◽  
Porous Silicon ◽  
Molecular Beam Epitaxy ◽  
Surface Morphology ◽  
Molecular Beam ◽  
Porous Si ◽  
Force Microscopy ◽  
Atomic Force ◽  
Nm Range

AbstractThe surface morphology of Ge grown on Si (001) and porous Si(001) by molecular beam epitaxy at 380 °C is examined using atomic force microscopy (AFM). For layer thicknesses of 30 nm, the surface shows islanding while still maintaining some of the underlying roughness of the surface of porous Si. For thicknesses in the 100 nm range, the surface roughness is not visible, but the islanding persists. Unlike the case of silicon where islands tend to merge and nearly disappear as the thickness of the deposited layer rises, we observe on the porous layer the persistence of the islands with no merging even for macroscopic thicknesses as large as 0.73 microns.

Fast Photoluminescence from Porous Silicon

1992 ◽  
Vol 283 ◽  
Author(s):  
V. Petrova-Koch ◽  
T. Muschik ◽  
D. I. Kovalev ◽  
F. Koch ◽  
V. Lehmann
Keyword(s):  
Porous Silicon ◽  
Response Time ◽  
Spectral Range ◽  
Luminescence Band ◽  
Room Temperature ◽  
Internal Surface ◽  
Porous Si ◽  
Time Resolved ◽  
Processed Material ◽  
Defect Luminescence

ABSTRACTTime-resolved studies of the visible photoluminescence in porous silicon with three different coverages of the internal surface are reported. We use aged, naturally oxidized porous Si (oxihydride), rapid thermal processed material (oxide) and samples stored in HF (pure hydride). A new, fast luminescence band in the blue-green spectral range and with response time less than 100 ns is observed at room temperature in each of the samples, although with different intensities. The observations prove that this is not an oxide-defect luminescence. We speculate on mechanisms for the origin of the fast luminescence in nanometer-size crystallites of Si.

Fabrication of Luminescent Porous Silicon with Stain Etches and Evidence that Luminescence Originates in Amorphous Layers

1991 ◽  
Vol 256 ◽  
Author(s):  
R. W. Fathauer ◽  
T. George ◽  
A. Ksendzov ◽  
T. L. lin ◽  
W. T. Pike ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Anodic Oxidation ◽  
Oxidation Reaction ◽  
Porous Si ◽  
Anodic Etching ◽  
Si Films

Stain films on Si wafers produced in solutions of HF:HNO3:H2O have been studied for over 30 years [1], and have been suggested [1] to be similar in nature to the anodically-etched porous Si films first demonstrated by Uhlir [2]. More recently, it was shown that stain films produced by etching Si in solutions of NaNO2 in HF and CrO3 in HF were similar in structure to porous Si films produced by anodic etching [3]. In fact, in the etching of Si by HF:HNO3:H3O solutions, the oxidation reaction chemistry is recognized to be the same as that of anodic oxidation, with points on the Si surface behaving randomly as localized anodes and cathodes [4]

Sign in / Sign up

Export Citation Format

Share Document