Fabrication of Luminescent Porous Silicon with Stain Etches and Evidence that Luminescence Originates in Amorphous Layers

1991 ◽  
Vol 256 ◽  
Author(s):  
R. W. Fathauer ◽  
T. George ◽  
A. Ksendzov ◽  
T. L. lin ◽  
W. T. Pike ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Anodic Oxidation ◽  
Oxidation Reaction ◽  
Porous Si ◽  
Anodic Etching ◽  
Si Films

Stain films on Si wafers produced in solutions of HF:HNO3:H2O have been studied for over 30 years [1], and have been suggested [1] to be similar in nature to the anodically-etched porous Si films first demonstrated by Uhlir [2]. More recently, it was shown that stain films produced by etching Si in solutions of NaNO2 in HF and CrO3 in HF were similar in structure to porous Si films produced by anodic etching [3]. In fact, in the etching of Si by HF:HNO3:H3O solutions, the oxidation reaction chemistry is recognized to be the same as that of anodic oxidation, with points on the Si surface behaving randomly as localized anodes and cathodes [4]

Porous Silicon-Based Optoelectronic Devices: Processing and Characterization

1992 ◽  
Vol 283 ◽  
Author(s):  
Nader M. Kalkhoran
Keyword(s):  
Porous Silicon ◽  
Light Emitting Diode ◽  
Optoelectronic Devices ◽  
Porous Si ◽  
Light Emitting ◽  
Anodic Etching ◽  
Wafer Scale Integration ◽  
Scale Integration ◽  
Silicon Based ◽  
Better Than

ABSTRACTA patterning process compatible with conventional Si electronics technology, which has resolution better than 5 μm, has been developed in order to perform selected-area anodic etching for producing luminescent porous Si layers (PSL). Correlations between the anodic etching and photolithographic parameters have been identified, and their effects on the resolution and luminescence of porous Si layers have been studied. Finally, the first monolithic processing, i.e., true wafer-scale integration, of a Si-based visible light-emitting diode (LED) and a photodetector using conventional Si technology has been demonstrated.

Fabrication Process of Porous Silicon-Based Optoelectronic Devices

1992 ◽  
Vol 281 ◽  
Author(s):  
Nader M. Kalkhoran
Keyword(s):  
Porous Silicon ◽  
Light Emitting Diode ◽  
Optoelectronic Devices ◽  
Porous Si ◽  
Light Emitting ◽  
Anodic Etching ◽  
Wafer Scale Integration ◽  
Scale Integration ◽  
Silicon Based ◽  
Better Than

ABSTRACTA patterning process compatible with conventional Si electronics technology, which has resolution better than 5 μm, has been developed in order to perform selected-area anodic etching for producing luminescent porous Si layers (PSL). Correlations between the anodic etching and photolithographic parameters have been identified, and their effects on the resolution and luminescence of porous Si layers have been studied. Finally, the first monolithic processing, i.e.,. true wafer-scale integration, of a Si-based visible light-emitting diode (LED) and a photodetector using conventional Si technology has been demonstrated.

Enhancement of efficiency in graphene/porous silicon solar cells by co-doping graphene with gold nanoparticles and bis(trifluoromethanesulfonyl)-amide

2017 ◽  
Vol 5 (35) ◽  
pp. 9005-9011 ◽  
Author(s):  
Ju Hwan Kim ◽  
Dong Hee Shin ◽  
Ha Seung Lee ◽  
Chan Wook Jang ◽  
Jong Min Kim ◽  
...  
Keyword(s):  
Gold Nanoparticles ◽  
Solar Cells ◽  
Porous Silicon ◽  
Au Nanoparticles ◽  
Silicon Solar Cells ◽  
Porous Si ◽  
Co Doping ◽  
Si Solar Cells ◽  
First Time

The co-doping of graphene with Au nanoparticles and bis(trifluoromethanesulfonyl)-amide is employed for the first time to enhance the performance of graphene/porous Si solar cells.

Visible Electro- and Photoluminescence from Porous Silicon and its Related Optoelectronic Properties

1991 ◽  
Vol 256 ◽  
Author(s):  
Nobuyoshi Koshida ◽  
Hideki Koyama
Keyword(s):  
Porous Silicon ◽  
Optical Absorption ◽  
Size Effect ◽  
Band Gap ◽  
Visible Region ◽  
Optoelectronic Properties ◽  
Porous Si ◽  
Quantum Size ◽  
Effect Model ◽  
Injection Type

ABSTRACTThe optoelectronic properties of porous Si (PS) are presented in terms of electroluminescence (EL), photoluminescence (PL), photoconduction (PC), and optical absorption. Observations of injection-type EL, efficient PL, band-gap widening, and photosensitivities In the visible region are consistent with the quantum size effect model in PS.

scholarly journals Morphology and FT IR spectra of porous silicon

2017 ◽  
Vol 68 (7) ◽  
pp. 53-57 ◽  
Author(s):  
Martin Kopani ◽  
Milan Mikula ◽  
Daniel Kosnac ◽  
Jan Gregus ◽  
Emil Pincik
Keyword(s):  
Porous Silicon ◽  
Ir Spectra ◽  
Silicon Layer ◽  
Porous Silicon Layer ◽  
Layer Formation ◽  
Porous Si ◽  
Ft Ir ◽  
P Type ◽  
Type Sample ◽  
Ftir Investigation

AbstractThe morphology and chemical bods of p-type and n-type porous Si was compared. The surface of n-type sample is smooth, homogenous without any features. The surface of p-type sample reveals micrometer-sized islands. FTIR investigation reveals various distribution of SiOxHycomplexes in both p-and n-type samples. From the conditions leading to porous silicon layer formation (the presence of holes) we suggest both SiOxHyand SiFxHycomplexes in the layer.

Gas Sensor Using an Aluminium-Porous Silicon Junction Application to the Detection of Non-Zero Molecular Dipole Moment

1994 ◽  
Vol 358 ◽  
Author(s):  
D. Stievenard ◽  
D. Deresmes
Keyword(s):  
Dipole Moment ◽  
Porous Silicon ◽  
Silicon Oxide ◽  
Surface States ◽  
Dangling Bonds ◽  
Porous Si ◽  
Adsorbed Gas ◽  
Dipole Layer ◽  
Dc Current ◽  
Partial Depletion

ABSTRACTPorous silicon is known to be sensitive to moisture. Using an aluminium-porous p+ silicon junction, we have realized a sensor which dc current increases up to two orders of magnitude in the presence of ammoniac. We have tested a series of various gases and we show that if the dipole moment of the molecule is zero, there is no effect on the dc current. To interpret quantitatively this phenomenon, we assume that the conductivity is governed by the width of a channel resulting from the partial depletion of silicon located between two pores. This depleted region is due to the charges trapped on surface states associated with the Si-SiO2 interface where SiO2 is the native silicon oxide. When some gas is adsorbed, we propose there is a passivation of the interface states (mainly dangling bonds), leading to a decrease of the depleted region, i.e. an increase of the width of the channel and thus an increase of the current. The adsorbed gas gives a dipole layer at the surface of the pore. This layer has no influence on the depleted region. It stabilizes electrons or holes at the porous Si surface, allowing a stable charge state of the dangling bonds.

Mechanism of Electron Injection During the Anodic Oxidation of Silicon

1992 ◽  
Vol 283 ◽  
Author(s):  
J.-N. Chazalvel ◽  
F. Ozanam
Keyword(s):  
Porous Silicon ◽  
Anodic Oxidation ◽  
Electron Injection ◽  
Injection Mechanism ◽  
Acidic Electrolyte

ABSTRACTn-Si photoanodes have been found to exhibit photocurrent multiplication during the first seconds of exposure to a fluoride-free, acidic electrolyte. This shows that, in contrast with earlier hypotheses, photocurrent doubling is not directly related to the presence of fluoride in the electrolyte, but rather must arise from an electron injection mechanism associated with the Si-H bonds initially present at the Si surface. It also suggests that the electroluminescence which has been observed during the anodic oxidation of porous silicon most probably stems from the same electron-injection mechanism.

Development of Silicon-Based UV-Photodetector Prototypes using Photoluminescent Nanocrystalline Silicon Overlayers

2000 ◽  
Vol 638 ◽  
Author(s):  
Carlos Navarro ◽  
Luis F. Fonseca ◽  
Guillermo Nery ◽  
O. Resto ◽  
S. Z. Weisz
Keyword(s):  
Porous Silicon ◽  
Active Zone ◽  
Silicon Detector ◽  
Nanocrystalline Silicon ◽  
Incident Radiation ◽  
Enhancement Effect ◽  
Type Silicon ◽  
Quantum Confinement Effects ◽  
Si Films ◽  
P Type

AbstractThe maximum photoresponse of a normal silicon photodetector, that uses a p-n junction as the active zone, is obtained when the incident radiation wavelength is around 750nm. This response diminishes significantly when the incident radiation is near or in the UV region. Meanwhile, nanocrystalline silicon (nc-Si) films with high transparency above 650nm and high absorbance in the UV can be prepared. By quantum confinement effects, a fraction of this absorbed UV energy is re-emitted as visible photons that can be used by the junction. We study the enhancement of the UV-photoresponse of two silicon detector prototypes with a silicon p-n junction active zone and with a photoluminescent nc-Si overlayer. One prototype is made with a porous silicon/n-type silicon/p-type silicon/p++-silicon/metal configuration and the other with an Eu-doped Si-SiO2 overlayer instead of the porous silicon one. The comparison between both prototypes and the control is presented and discussed stressing on the enhancement effect introduced by the photoluminescent overlayers, stability and reproducibility.

Photoluminescence of Chemically Etched Polycrystalline and Amorphous Si Thin Films

1993 ◽  
Vol 298 ◽  
Author(s):  
A. J. Steckl ◽  
J. Xu ◽  
H. C. Mogul
Keyword(s):  
Thin Films ◽  
Strong Relationship ◽  
Porous Si ◽  
X Ray Diffraction ◽  
X Ray ◽  
Amorphous Si ◽  
Si Films ◽  
Uv Excitation ◽  
Highly Porous ◽  
Stain Etching

AbstractSi thin films were deposited on quartz at temperatures ( TD ) ranging from 540 to 640°C. X-ray diffraction indicates that films deposited at TD < 580°C are amorphous, while those deposited above 600°C are poly-crystalline with a <220> texture. The Si films were made porous by stain-etching in HF:HNO3:H2O. Only Si films deposited at 590°C and above show photoluminescence (PL), centered at ∼650-670 nm under UV excitation. Films deposited at TD < 580°C do not luminesce even after very long etch times, which produce a highly porous structure. The PL intensity and the x-ray signal follow a very similar trend with TD. It appears that a minimum level of crystallinity is required for photoemission in porous Si and that a strong relationship exists between them.

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