A vertically stacked phosphorescent multilayer organic light emitting transistor

RSC Advances ◽  
2016 ◽  
Vol 6 (93) ◽  
pp. 90873-90877 ◽  
Author(s):  
Ritu Verma ◽  
Vandana Yadav ◽  
Khushdeep Kaur ◽  
Md Bayazeed Alam ◽  
Nidhi Singh ◽  
...  

The fabricated VOLETs have a working voltage of less than 5 V with a luminance of 3450 Cd m−2. The charge injection with a gate electric field is mainly governed by the choice of organic materials and rough source electrode.

2015 ◽  
Vol 117 (15) ◽  
pp. 155503 ◽  
Author(s):  
Martin Weis ◽  
Takako Otsuka ◽  
Dai Taguchi ◽  
Takaaki Manaka ◽  
Mitsumasa Iwamoto

2000 ◽  
Vol 78 (3) ◽  
pp. 231-241 ◽  
Author(s):  
M D'Iorio

Molecular organic materials have had an illustrious past but the ability to deposit these as homogeneous thin films has rejuvenated the field and led to organic light-emitting diodes (OLEDs) and the development of an increasing number of high-performance polymers for nonlinear and electronic applications. Whereas the use of organic materials in micro-electronics was restricted to photoresists for patterning purposes, polymeric materials are coming of age as metallic interconnects, flexible substrates, insulators, and semiconductors in all-plastic electronics. The focus of this topical review will be on organic light-emitting devices with a discussion of the most recent developments in electronic devices.PACS Nos.: 85.60Jb, 78.60Fi, 78.55Kz, 78.66Qn, 73.61Ph, 72.80Le


Author(s):  
Shaoqiang Dong ◽  
Zhen Li

In last decades, open-shell organic materials have attracted scientists’ great attention for their new chemical and physical properties, as well as their possible applications in new generation of organic light-emitting...


2005 ◽  
Vol 87 (8) ◽  
pp. 081106 ◽  
Author(s):  
G. L. Ma ◽  
G. Z. Ran ◽  
A. G. Xu ◽  
Y. H. Xu ◽  
Y. P. Qiao ◽  
...  

2019 ◽  
Vol 19 (11) ◽  
pp. 6995-7003 ◽  
Author(s):  
Mohd Arif Mohd Sarjidan ◽  
Ahmad Shuhaimi ◽  
Wan Haliza Abd. Majid

A simple spin-coating process for fabricating vertical organic light-emitting transistors (VOLETs) is realized by utilizing silver nanowire (AgNW) as a source electrode. The optical, electrical and morphological properties of the AgNW formation was initially optimized, prior VOFET fabrication. A high molecular weight of poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] MEH-PPV was used as an organic semiconductor layer in the VOFET in forming a multilayer structure by solution process. It was found that current density and luminance intensity of the VOLET can be modulated by a small magnitude of gate voltage. The modulation process was induced by changing an injection barrier via gate voltage bias. A space-charge-limited current (SCLC) approach in determining transistor mobility has been introduced. This preliminary and fundamental work is beneficial towards all-solution processing display devices.


2002 ◽  
Vol 3 (3-4) ◽  
pp. 129-141 ◽  
Author(s):  
Simon J Martin ◽  
Geraldine L.B Verschoor ◽  
Matthew A Webster ◽  
Alison B Walker

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