Roles of oxygen and nitrogen in control of nonlinear resistive behaviors via filamentary and homogeneous switching in an oxynitride thin film memristor

RSC Advances ◽  
2016 ◽  
Vol 6 (66) ◽  
pp. 61221-61227 ◽  
Author(s):  
Yu-Chuan Shih ◽  
Tsang-Hsuan Wang ◽  
Jian-Shiou Huang ◽  
Chih-Chung Lai ◽  
Ying-Jhan Hong ◽  
...  

A TiOxNy thin film, which contains controllable concentrations of oxygen and nitrogen by a single-step reactive sputtering process, exhibiting non-linear I–V behavior, was proposed and demonstrated.

2020 ◽  
Vol 140 (12) ◽  
pp. 369-373
Author(s):  
Hiroyuki Nikkuni ◽  
Chizuru Numata ◽  
Ryoto Yamaji ◽  
Hiroshi Ito ◽  
Yoshio Kawamata

2012 ◽  
Vol 111 (8) ◽  
pp. 084320 ◽  
Author(s):  
Yibin Xu ◽  
Masahiro Goto ◽  
Ryozo Kato ◽  
Yoshihisa Tanaka ◽  
Yutaka Kagawa

2018 ◽  
Vol 18 (11) ◽  
pp. 7670-7681
Author(s):  
Om Pal Singh ◽  
Kuldeep Singh Gour ◽  
Rahul Parmar ◽  
Vidya Nand Singh

1992 ◽  
Vol 84 (12) ◽  
pp. 1107-1110 ◽  
Author(s):  
R. Pinto ◽  
Ravi Kumar ◽  
Navdeep Goyal ◽  
P.R. Apte ◽  
S.P. Pai ◽  
...  

2020 ◽  
Vol 20 (6) ◽  
pp. 746-750 ◽  
Author(s):  
J.C. Choi ◽  
M.S. Song ◽  
K. Lee ◽  
K. Park ◽  
J. Park ◽  
...  

2013 ◽  
Vol 113 (18) ◽  
pp. 183520 ◽  
Author(s):  
Y. Y. Luo ◽  
L. Q. Zhu ◽  
Y. X. Zhang ◽  
S. S. Pan ◽  
S. C. Xu ◽  
...  

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