Ammonolysis of polycrystalline and amorphized gallium arsenide GaAs to polytype-specific nanopowders of gallium nitride GaN

RSC Advances ◽  
2016 ◽  
Vol 6 (47) ◽  
pp. 41074-41086 ◽  
Author(s):  
Mariusz Drygaś ◽  
Piotr Jeleń ◽  
Marta Radecka ◽  
Jerzy F. Janik
Keyword(s):  
Gallium Arsenide ◽  
Gallium Nitride ◽  
Wide Bandgap ◽  
Single Step ◽  
Nanocrystalline Powders ◽  
Wide Bandgap Semiconductor ◽  
Metathesis Reactions ◽  
High Yields

Single-step N-for-As metathesis reactions of gallium arsenide GaAs with ammonia NH3 at temperatures in the range 650–950 °C for 6–90 hours afforded high yields of pure nanocrystalline powders of the wide bandgap semiconductor gallium nitride GaN.

Ammonolysis of gallium phosphide GaP to the nanocrystalline wide bandgap semiconductor gallium nitride GaN

RSC Advances ◽  
2015 ◽  
Vol 5 (128) ◽  
pp. 106128-106140 ◽  
Author(s):  
Mariusz Drygas ◽  
Maciej Sitarz ◽  
Jerzy F. Janik
Keyword(s):  
Gallium Nitride ◽  
Gallium Phosphide ◽  
Wide Bandgap ◽  
Wide Bandgap Semiconductor

Ammonolysis of microcrystalline powders of gallium phosphide GaP afforded nanopowders or nanowires of hexagonal gallium nitride GaN.

Silicon Carbide And Gallium Nitride Rf Power Devices

1997 ◽  
Vol 483 ◽  
Author(s):  
C. E. Weitzel ◽  
K. E. Moore
Keyword(s):  
Silicon Carbide ◽  
Gallium Nitride ◽  
Output Power ◽  
Wide Bandgap ◽  
Rf Power ◽  
Power Performance ◽  
Power Devices ◽  
Power Module ◽  
Wide Bandgap Semiconductor ◽  
Power Densities

AbstractImpressive RF power performance has been demonstrated by three radically different wide bandgap semiconductor power devices, SiC MESFET's, SiC SIT's, and AlGaN HFET's. AlGaN HFET's have achieved the highest fmax 97 GHz. 4H-SiC MESFET's have achieved the highest power densities, 3.3 W/mm at 850 MHz (CW) and at 10 GHz (pulsed). 4H-SiC SIT's have achieved the highest output power, 450 W (pulsed) at 600 MHz and 38 W (pulsed) at 3 GHz. Moreover a one kilowatt, 600 MHz SiC power module containing four multi-cell SIT's with a total source periphery of 94.5 cm has been demonstrated.

Ammonolytical conversion of microcrystalline gallium antimonide GaSb to nanocrystalline gallium nitride GaN: thermodynamics vs. topochemistry

RSC Advances ◽  
2015 ◽  
Vol 5 (100) ◽  
pp. 82576-82586 ◽  
Author(s):  
Mariusz Drygaś ◽  
Piotr Jeleń ◽  
Mirosław M. Bućko ◽  
Zbigniew Olejniczak ◽  
Jerzy F. Janik
Keyword(s):  
Gallium Nitride ◽  
Gallium Antimonide ◽  
Nanocrystalline Powders ◽  
One Step ◽  
High Yields

Reaction of microcrystalline powders of gallium antimonide GaSb with ammonia afforded in one step high yields of nanocrystalline powders of the semiconductor gallium nitride GaN. The product was made as a mixture of the cubic and hexagonal polytypes.

scholarly journals Novel molecular biological tools for the efficient expression of fungal lytic polysaccharide monooxygenases in Pichia pastoris

2021 ◽  
Vol 14 (1) ◽  
Author(s):  
Lukas Rieder ◽  
Katharina Ebner ◽  
Anton Glieder ◽  
Morten Sørlie
Keyword(s):  
Pichia Pastoris ◽  
Biomass Conversion ◽  
Single Step ◽  
Additional Advantage ◽  
Lytic Polysaccharide Monooxygenases ◽  
Expression Host ◽  
Shake Flask Cultivation ◽  
Polysaccharide Monooxygenases ◽  
Efficient Expression ◽  
High Yields

Abstract Background Lytic polysaccharide monooxygenases (LPMOs) are attracting large attention due their ability to degrade recalcitrant polysaccharides in biomass conversion and to perform powerful redox chemistry. Results We have established a universal Pichia pastoris platform for the expression of fungal LPMOs using state-of-the-art recombination cloning and modern molecular biological tools to achieve high yields from shake-flask cultivation and simple tag-less single-step purification. Yields are very favorable with up to 42 mg per liter medium for four different LPMOs spanning three different families. Moreover, we report for the first time of a yeast-originating signal peptide from the dolichyl-diphosphooligosaccharide-protein glycosyltransferase subunit 1 (OST1) form S. cerevisiae efficiently secreting and successfully processes the N-terminus of LPMOs yielding in fully functional enzymes. Conclusion The work demonstrates that the industrially most relevant expression host P. pastoris can be used to express fungal LPMOs from different families in high yields and inherent purity. The presented protocols are standardized and require little equipment with an additional advantage with short cultivation periods.

Interface-engineered barium magnetoplumbite–wide-bandgap semiconductor integration enabling 5G system-on-wafer solutions for full-duplexing phased arrays

2021 ◽  
Vol 119 (5) ◽  
pp. 051906
Author(s):  
C. Yu ◽  
P. Andalib ◽  
A. Sokolov ◽  
O. Fitchorova ◽  
W. Liang ◽  
...  
Keyword(s):  
Phased Arrays ◽  
Wide Bandgap ◽  
Wide Bandgap Semiconductor

Self‐Confined Growth of Ultrathin 2D Nonlayered Wide‐Bandgap Semiconductor CuBr Flakes

2019 ◽  
Vol 31 (36) ◽  
pp. 1903580 ◽  
Author(s):  
Chuanhui Gong ◽  
Junwei Chu ◽  
Chujun Yin ◽  
Chaoyi Yan ◽  
Xiaozong Hu ◽  
...  
Keyword(s):  
Wide Bandgap ◽  
Wide Bandgap Semiconductor ◽  
Confined Growth

A detailed characterization of the transient electron transport within zinc oxide, gallium nitride, and gallium arsenide

2012 ◽  
Vol 112 (12) ◽  
pp. 123722 ◽  
Author(s):  
Walid A. Hadi ◽  
Shamsul Chowdhury ◽  
Michael S. Shur ◽  
Stephen K. O'Leary
Keyword(s):  
Gallium Arsenide ◽  
Zinc Oxide ◽  
Gallium Nitride ◽  
Electron Transport ◽  
Detailed Characterization

Ferromagnetism of wide-bandgap semiconductor surfaces: Mg-doped AlN

2015 ◽  
Vol 54 (11) ◽  
pp. 110302 ◽  
Author(s):  
Sandhya Chintalapati ◽  
Yongqing Cai ◽  
Ming Yang ◽  
Lei Shen ◽  
Yuan Ping Feng
Keyword(s):  
Wide Bandgap ◽  
Semiconductor Surfaces ◽  
Wide Bandgap Semiconductor ◽  
Mg Doped

Study of the Hole Transport Processes in Solution-Processed Layers of the Wide Bandgap Semiconductor Copper(I) Thiocyanate (CuSCN)

2015 ◽  
Vol 25 (43) ◽  
pp. 6802-6813 ◽  
Author(s):  
Pichaya Pattanasattayavong ◽  
Alexander D. Mottram ◽  
Feng Yan ◽  
Thomas D. Anthopoulos
Keyword(s):  
Wide Bandgap ◽  
Hole Transport ◽  
Transport Processes ◽  
Solution Processed ◽  
Wide Bandgap Semiconductor
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