Luminescence and high temperature ferromagnetism in YAlO nanophosphors: materials for efficient next generation LEDs and spintronic applications

RSC Advances ◽  
2016 ◽  
Vol 6 (36) ◽  
pp. 29869-29879 ◽  
Author(s):  
K. Jayanthi Rajan ◽  
M. Mohan Rao ◽  
L. Satyanarayana ◽  
M. Manivel Raja ◽  
Kuntumalla Mohan Kumar ◽  
...  
Keyword(s):  
High Temperature ◽  
Aluminium Oxide ◽  
Next Generation ◽  
Environment Friendly ◽  
White Leds ◽  
Yttrium Aluminium

Yttrium-aluminium-oxide (YAlO) based nanophosphors for environment friendly and efficient white LEDs and spintronics devices.

Color tunable Ca8ZnM(PO4)7 (M = Lu/Tb, Lu/Eu, Tb/Eu) phosphors: luminescence, energy transfer and thermal stability studies for n-UV white LEDs

2021 ◽  
Author(s):  
Jing Yan ◽  
Chunyan Jiang ◽  
Yulun Xian ◽  
Jianbang Zhou ◽  
Hong Li ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Energy Transfer ◽  
High Temperature ◽  
Solid State ◽  
Powder Diffraction ◽  
Stability Studies ◽  
X Ray ◽  
White Leds ◽  
Color Tunable ◽  
Xrd Patterns

A series of Tb3+- and Eu3+-doped Ca8ZnLu(PO4)7 (CZLP:Tb3+ and CZLP:Eu3+) as well as Ca8ZnTb(PO4)7:Eu3+ (CZTP:Eu3+) phosphors have been prepared via the traditional high-temperature solid-state reaction. X-ray powder diffraction (XRD) patterns...

Double perovskite (Gd0.85-xYx)2MgTiO6:0.3Eu3+ red phosphors for white LEDs with excellent high temperature performance

2019 ◽  
Vol 45 (16) ◽  
pp. 20837-20843 ◽  
Author(s):  
Xiaoyan Sun ◽  
Nan Ding ◽  
Wentao Huang ◽  
Haikui Zhu ◽  
Lixi Wang ◽  
...  
Keyword(s):  
High Temperature ◽  
Double Perovskite ◽  
White Leds ◽  
Red Phosphors ◽  
Temperature Performance

Solution-processed amorphous yttrium aluminium oxide YAlxOy and aluminum oxide AlxOy, and their functional dielectric properties and performance in thin-film transistors

2020 ◽  
Vol 8 (25) ◽  
pp. 8521-8530 ◽  
Author(s):  
Nico Koslowski ◽  
Vanessa Trouillet ◽  
Jörg J. Schneider
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Thin Film Transistor ◽  
Aluminium Oxide ◽  
Single Source ◽  
Yttrium Aluminium ◽  
Single Source Precursor ◽  
Deep Uv ◽  
And Performance ◽  
Amorphous Dielectric

Yttrium aluminium oxide (YAlxOy) dielectric is accessible using a molecular single-source precursor approach. Processing using deep UV leads to a functional amorphous dielectric with functionality in a thin-film transistor device.

SiC High Temperature Electronics for Next Generation Aircraft Controls Systems

1996 ◽  
Author(s):  
John F. Perkins ◽  
Richard H. Hopkins ◽  
Charles D. Brandt ◽  
Anant K. Agarwal ◽  
Suresh Seshadri ◽  
...  
Keyword(s):  
High Temperature ◽  
High Speed ◽  
Technology Development ◽  
Temperature Tolerance ◽  
Oxide Semiconductor ◽  
Power Device ◽  
Next Generation ◽  
Power Devices ◽  
Basic Work ◽  
Aircraft Controls

Several organizations, including Westinghouse, CREE, and ATM, as well as researchers in Japan and Europe, are working to develop SiC power devices for reliable, high power and high temperature environments in military, industrial, utility, and automotive applications. Other organizations, such as NASA Lewis and several universities, are also doing important basic work on basic SiC technology development. It has been recognized for two decades that the superior properties of SiC lead to range of devices with higher power, greater temperature tolerance, and significantly more radiation hardness than silicon or GaAs. This combination of superior thermal and electrical properties results in SiC devices that can operate at up to ten times the power density of Si devices for a given volume. Recent research has focused on the development of vertical metal oxide semiconductor field effect transistor (VMOSFET) power device technology, and complementary high speed, temperature-tolerant rectifier-diodes for power applications. We are also evaluating applications for field control thyristors (FCT) and MOS turn-off thyristors (MTO). The technical issues to be resolved for these devices are also common to other power device structures. The present paper reviews the relative benefits of various power devices structures, with emphasis on how the special properties of SiC enhance the desirability of specific device configurations as compared to the Si-based versions of these devices. Progress in SiC material quality and recent power device research will be reviewed, and the potential for SiC-based devices to operate at much higher temperatures than Si-based devices, or with enhanced reliability at higher temperatures will be stressed. We have already demonstrated 1000V breakdown, current densities of 1 kA/cm2, and measurements up to 400°C in small diodes. The extension of this work will enable the implementation of highly distributed aircraft power control systems, as well as actuator and signal conditioning electronics for next generation engine sensors, by permitting electronic circuits, sensors and smart actuators to be mounted on or at the engine.

The Next Generation of Regenerative Catalytic Breakers for Use in Alkaline and High-Temperature Fracturing Fluids

2010 ◽  
Author(s):  
Charles David Armstrong ◽  
Richard Fowler Stevens ◽  
Hoang Van Le ◽  
Christopher J. Stephenson ◽  
Qi Qu
Keyword(s):  
High Temperature ◽  
Next Generation ◽  
Fracturing Fluids

scholarly journals AMADEUS: Next generation materials and solid state devices for ultra high temperature energy storage and conversion

2018 ◽  
Author(s):  
Alejandro Datas ◽  
Ana Belén. Cristobal ◽  
Carlos del Cañizo ◽  
Elisa Antolín ◽  
Michel Beaughon ◽  
...  
Keyword(s):  
High Temperature ◽  
Energy Storage ◽  
Solid State ◽  
Energy Storage And Conversion ◽  
Next Generation ◽  
Solid State Devices ◽  
Ultra High Temperature

Project Deep-Burn: Development of Transuranic Fuel for High-Temperature Helium-Cooled Reactors

2008 ◽  
Author(s):  
Robert M. Versluis ◽  
Francesco Venneri ◽  
David Petti ◽  
Lance Snead ◽  
Donald McEachern
Keyword(s):  
High Temperature ◽  
Nuclear Plant ◽  
Next Generation ◽  
Very High Temperature Reactor ◽  
High Temperature Reactor ◽  
Very High ◽  
The U.S

The helium-cooled, graphite-moderated Very High Temperature Reactor (VHTR) has become the centerpiece of the U.S. Department of Energy’s (DOE) Next Generation Nuclear Plant (NGNP) program. The NGNP program aims to construct a VHTR prototype, with the participation of industry, by the year 2021.

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