Negative differential resistance in GeSi core–shell transport junctions: the role of local sp2hybridization

Nanoscale ◽  
2016 ◽  
Vol 8 (35) ◽  
pp. 16026-16033 ◽  
Author(s):  
Nuo Liu ◽  
Lei Zhang ◽  
Xiaobin Chen ◽  
Xianghua Kong ◽  
Xiaohong Zheng ◽  
...  
Keyword(s):  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Core Shell

Negative differential resistance in molecular devices: the role of molecule-electrode coupling

2011 ◽  
Vol 54 (8) ◽  
pp. 1455-1460 ◽  
Author(s):  
YaXin Zhai ◽  
GuoMin Ji ◽  
ChangFeng Fang ◽  
Bin Cui ◽  
Peng Zhao ◽  
...  
Keyword(s):  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Molecular Devices

scholarly journals Core-shell III-nitride nanowire heterostructure: negative differential resistance and device application potential

2018 ◽  
Vol 52 (4) ◽  
pp. 475
Author(s):  
A.M. Mozharov ◽  
A.A. Vasiliev ◽  
A.D. Bolshakov ◽  
G.A. Sapunov ◽  
V.V. Fedorov ◽  
...  
Keyword(s):  
Numerical Calculation ◽  
Negative Differential Resistance ◽  
Current Flow ◽  
Differential Resistance ◽  
Core Shell ◽  
Strong Localization ◽  
Calculation Results ◽  
Application Potential ◽  
Negative Differential Resistance Effect ◽  
Gan Nanowire

AbstractIn this work we have studied volt-ampere characteristics of single core-shell GaN/InGaN/GaN nanowire. It was experimentally shown that negative differential resistance effect can be obtained in the studied heterostructure. On the base of numerical calculation results the model describing negative differential resistance phenomenon was proposed. We assume this effect to be related with strong localization of current flow inside the nanowire and emergence of Gunn effect in this area.

Programmable Negative Differential Resistance Effects Based on Self‐Assembled Au@PPy Core–Shell Nanoparticle Arrays

2018 ◽  
Vol 30 (35) ◽  
pp. 1802731 ◽  
Author(s):  
Jianzhong Zheng ◽  
Junchang Zhang ◽  
Zi Wang ◽  
Liubiao Zhong ◽  
Yinghui Sun ◽  
...  
Keyword(s):  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Core Shell ◽  
Nanoparticle Arrays ◽  
Self Assembled

Some methods to regulate low-bias negative differential resistance in σ barrier separating nanoscale molecular transport systems

2016 ◽  
Vol 30 (02) ◽  
pp. 1550256 ◽  
Author(s):  
Ji-Mei Shen ◽  
Jing Liu ◽  
Yi Min ◽  
Li-Ping Zhou
Keyword(s):  
Negative Differential Resistance ◽  
Density Functional ◽  
Molecular Transport ◽  
Differential Resistance ◽  
Real Space ◽  
Peak Position ◽  
Transport Systems ◽  
Orbital Interaction ◽  
Potential Applications

Using the first-principles method which combines the nonequilibrium Green’s function (NEGF) with density functional theory (DFT), the role of defect, dopant, barrier length and geometric deformation for low-bias negative differential resistance (NDR) in two capped armchair carbon nanotubes (CNTs) sandwiching [Formula: see text] barrier are systematically analyzed. We found that this method can regulate the negative differential resistance (NDR) effects such as current peak and peak position. The adjusting mechanism may originate from orbital interaction and orbital reconstruction. Our calculations try to manipulate the transport characteristics in energy space by simply manipulating the structure in real space, which may promise the potential applications in nanomolecular-electronics in the future.

Core-Shell III-Nitride Nanowire Heterostructure: Negative Differential Resistance and Device Application Potential

2018 ◽  
Vol 52 (4) ◽  
pp. 489-492 ◽  
Author(s):  
A. M. Mozharov ◽  
A. A. Vasiliev ◽  
A. D. Bolshakov ◽  
G. A. Sapunov ◽  
V. V. Fedorov ◽  
...  
Keyword(s):  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Core Shell ◽  
Device Application ◽  
Application Potential

scholarly journals The role of Mg bulk hyper-doping and delta-doping in low-resistance GaN homojunction tunnel diodes with negative differential resistance

2019 ◽  
Vol 126 (8) ◽  
pp. 083110
Author(s):  
Ehsan Vadiee ◽  
Evan A. Clinton ◽  
Joe V. Carpenter ◽  
Heather McFavilen ◽  
Chantal Arena ◽  
...  
Keyword(s):  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Tunnel Diodes ◽  
Low Resistance ◽  
Delta Doping

Compositional Tuning of Negative Differential Resistance in Bulk Silver Iodide Memristor

2020 ◽  
Author(s):  
SMITA GAJANAN NAIK ◽  
Mohammad Hussain Kasim Rabinal
Keyword(s):  
Power Consumption ◽  
Negative Differential Resistance ◽  
Silver Iodide ◽  
Differential Resistance ◽  
Fast Response ◽  
Low Power Consumption ◽  
Switching Effect ◽  
Memory Switching ◽  
Bulk Silver ◽  
Emerging Memory

Electrical memory switching effect has received a great interest to develop emerging memory technology such as memristors. The high density, fast response, multi-bit storage and low power consumption are their...

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