Programmable Negative Differential Resistance Effects Based on Self‐Assembled Au@PPy Core–Shell Nanoparticle Arrays

2018 ◽  
Vol 30 (35) ◽  
pp. 1802731 ◽  
Author(s):  
Jianzhong Zheng ◽  
Junchang Zhang ◽  
Zi Wang ◽  
Liubiao Zhong ◽  
Yinghui Sun ◽  
...  
2004 ◽  
Vol 126 (1) ◽  
pp. 295-300 ◽  
Author(s):  
Ronald A. Wassel ◽  
Grace M. Credo ◽  
Ryan R. Fuierer ◽  
Daniel L. Feldheim ◽  
Christopher B. Gorman

Nanoscale ◽  
2016 ◽  
Vol 8 (35) ◽  
pp. 16026-16033 ◽  
Author(s):  
Nuo Liu ◽  
Lei Zhang ◽  
Xiaobin Chen ◽  
Xianghua Kong ◽  
Xiaohong Zheng ◽  
...  

Author(s):  
A.M. Mozharov ◽  
A.A. Vasiliev ◽  
A.D. Bolshakov ◽  
G.A. Sapunov ◽  
V.V. Fedorov ◽  
...  

AbstractIn this work we have studied volt-ampere characteristics of single core-shell GaN/InGaN/GaN nanowire. It was experimentally shown that negative differential resistance effect can be obtained in the studied heterostructure. On the base of numerical calculation results the model describing negative differential resistance phenomenon was proposed. We assume this effect to be related with strong localization of current flow inside the nanowire and emergence of Gunn effect in this area.


2014 ◽  
Vol 118 (36) ◽  
pp. 21199-21203 ◽  
Author(s):  
Ying-Chin Chen ◽  
Shih-Hao Hsu ◽  
Chao-Cheng Kaun ◽  
Minn-Tsong Lin

Langmuir ◽  
2001 ◽  
Vol 17 (22) ◽  
pp. 6923-6930 ◽  
Author(s):  
Christopher B. Gorman ◽  
Richard L. Carroll ◽  
Ryan R. Fuierer

1999 ◽  
Vol 103 (3) ◽  
pp. 395-398 ◽  
Author(s):  
Jay A. Switzer ◽  
Brett M. Maune ◽  
Eric R. Raub ◽  
Eric W. Bohannan

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