A study of the transition between the non-polar and bipolar resistance switching mechanisms in the TiN/TiO2/Al memory

Nanoscale ◽  
2016 ◽  
Vol 8 (36) ◽  
pp. 16455-16466 ◽  
Author(s):  
Xing Long Shao ◽  
Kyung Min Kim ◽  
Kyung Jean Yoon ◽  
Seul Ji Song ◽  
Jung Ho Yoon ◽  
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Resistance Switching ◽  
Bipolar Resistance Switching

Oxygen migration process in the interfaces during bipolar resistance switching behavior of WO3−x-based nanoionics devices

2012 ◽  
Vol 100 (23) ◽  
pp. 231603 ◽  
Author(s):  
Rui Yang ◽  
Kazuya Terabe ◽  
Tohru Tsuruoka ◽  
Tsuyoshi Hasegawa ◽  
Masakazu Aono
Keyword(s):  
Resistance Switching ◽  
Switching Behavior ◽  
Migration Process ◽  
Oxygen Migration ◽  
Bipolar Resistance Switching

Bipolar Resistance Switching Characteristics in Zirconium Oxide

2013 ◽  
Vol 457 (1) ◽  
pp. 146-152 ◽  
Author(s):  
Chun-Hung Lai ◽  
Chih-Yi Liu ◽  
Hsiwen Yang
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Resistance Switching ◽  
Switching Characteristics ◽  
Bipolar Resistance Switching

scholarly journals Anomalous effect due to oxygen vacancy accumulation below the electrode in bipolar resistance switching Pt/Nb:SrTiO3 cells

APL Materials ◽  
2014 ◽  
Vol 2 (6) ◽  
pp. 066103 ◽  
Author(s):  
Shinbuhm Lee ◽  
Jae Sung Lee ◽  
Jong-Bong Park ◽  
Yong Koo Kyoung ◽  
Myoung-Jae Lee ◽  
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Keyword(s):  
Oxygen Vacancy ◽  
Resistance Switching ◽  
Anomalous Effect ◽  
Bipolar Resistance Switching

Bipolar resistance switching in the fully transparent BaSnO 3 -based memory device

2014 ◽  
Vol 23 (8) ◽  
pp. 087304
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Ting Zhang ◽  
Jiang Yin ◽  
Gao-Feng Zhao ◽  
Wei-Feng Zhang ◽  
Yi-Dong Xia ◽  
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Resistance Switching ◽  
Bipolar Resistance Switching

Conversion from unipolar to bipolar resistance switching by inserting Ta2O5 layer in Pt/TaOx/Pt cells

2011 ◽  
Vol 98 (18) ◽  
pp. 183507 ◽  
Author(s):  
H. K. Yoo ◽  
S. B. Lee ◽  
J. S. Lee ◽  
S. H. Chang ◽  
M. J. Yoon ◽  
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Keyword(s):  
Resistance Switching ◽  
Bipolar Resistance Switching ◽  
Ta2o5 Layer
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