scholarly journals Anomalous effect due to oxygen vacancy accumulation below the electrode in bipolar resistance switching Pt/Nb:SrTiO3 cells

APL Materials ◽  
2014 ◽  
Vol 2 (6) ◽  
pp. 066103 ◽  
Author(s):  
Shinbuhm Lee ◽  
Jae Sung Lee ◽  
Jong-Bong Park ◽  
Yong Koo Kyoung ◽  
Myoung-Jae Lee ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Resistance Switching ◽  
Anomalous Effect ◽  
Bipolar Resistance Switching

Oxygen migration process in the interfaces during bipolar resistance switching behavior of WO3−x-based nanoionics devices

2012 ◽  
Vol 100 (23) ◽  
pp. 231603 ◽  
Author(s):  
Rui Yang ◽  
Kazuya Terabe ◽  
Tohru Tsuruoka ◽  
Tsuyoshi Hasegawa ◽  
Masakazu Aono
Keyword(s):  
Resistance Switching ◽  
Switching Behavior ◽  
Migration Process ◽  
Oxygen Migration ◽  
Bipolar Resistance Switching

scholarly journals Optically Modulated Resistance Switching Polarities in BaTiO3 Thin Film

2020 ◽  
Author(s):  
Jing Wang ◽  
Bailey Bedford ◽  
Chanle Chen ◽  
Ludi Miao ◽  
Binghcheng Luo
Keyword(s):  
Thin Film ◽  
Oxygen Vacancy ◽  
Excitation Energy ◽  
Ultraviolet Light ◽  
Light Response ◽  
Resistance Switching ◽  
The State ◽  
Switching Behavior ◽  
Memory Devices ◽  
Resistive Memory

The light response and resistance switching behavior in BaTiO3 (BTO) films are studied for a symmetric Pt/BTO/Pt structure. The resistance of films as a function of time with and without ultraviolet light has been studied. Furthermore, resistance switching behavior was clearly observed based on the application of 365 nm wavelength ultraviolet light. Consequently, the polarities of resistance switching can be controlled by ultraviolet light when the energy is larger than the band excitation energy. It is proposed that the polarity of the resistance switching is dictated by the competition of the ferroelectricity and oxygen vacancy migration. This provides a new mechanism for modulating the state of ferroelectric resistive memory devices.

MECHANISM STUDY ON OXYGEN VACANCY INDUCED RESISTANCE SWITCHING IN Au/LaMnO3/SrNb0.01Ti0.99O3

2013 ◽  
Vol 27 (11) ◽  
pp. 1350074 ◽  
Author(s):  
YU-LING JIN ◽  
ZHONG-TANG XU ◽  
KUI-JUAN JIN ◽  
CHEN GE ◽  
HUI-BIN LU ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Oxygen Vacancies ◽  
Vacancy Concentration ◽  
Resistance Switching ◽  
Switching Behavior ◽  
Oxygen Vacancy Concentration ◽  
Mechanism Study ◽  
Switching Performance ◽  
Switching Characteristics

Mechanism of resistance switching in heterostructure Au / LaMnO 3/ SrNb 0.01 Ti 0.99 O 3 was investigated. In Au / LaMnO 3/ SrNb 0.01 Ti 0.99 O 3 devices the LaMnO 3 films were fabricated under various oxygen pressures. The content of the oxygen vacancies has a significant impact on the resistance switching performance. We propose that the resistance switching characteristics of Au / LaMnO 3/ SrNb 0.01 Ti 0.99 O 3 arise from the modulation of the Au / LaMnO 3 Schottky barrier due to the change of the oxygen vacancy concentration at Au / LaMnO 3 interface under the external electric field. The effect of the oxygen vacancy concentration on the resistance switching is explained based on the self-consistent calculation. Both the experimental and numerical results confirm the important role of the oxygen vacancies in the resistance switching behavior.

Distinguishing Oxygen Vacancy Electromigration and Conductive Filament Formation in TiO2 Resistance Switching Using Liquid Electrolyte Contacts

Nano Letters ◽  
2017 ◽  
Vol 17 (7) ◽  
pp. 4390-4399 ◽  
Author(s):  
Kechao Tang ◽  
Andrew C. Meng ◽  
Fei Hui ◽  
Yuanyuan Shi ◽  
Trevor Petach ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Liquid Electrolyte ◽  
Resistance Switching ◽  
Filament Formation ◽  
Conductive Filament

Bipolar Resistance Switching Characteristics in Zirconium Oxide

2013 ◽  
Vol 457 (1) ◽  
pp. 146-152 ◽  
Author(s):  
Chun-Hung Lai ◽  
Chih-Yi Liu ◽  
Hsiwen Yang
Keyword(s):  
Zirconium Oxide ◽  
Resistance Switching ◽  
Switching Characteristics ◽  
Bipolar Resistance Switching

Bipolar resistance switching in the fully transparent BaSnO 3 -based memory device

2014 ◽  
Vol 23 (8) ◽  
pp. 087304
Author(s):  
Ting Zhang ◽  
Jiang Yin ◽  
Gao-Feng Zhao ◽  
Wei-Feng Zhang ◽  
Yi-Dong Xia ◽  
...  
Keyword(s):  
Memory Device ◽  
Resistance Switching ◽  
Bipolar Resistance Switching
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