Recombination control in high-performance quantum dot-sensitized solar cells with a novel TiO2/ZnS/CdS/ZnS heterostructure

2016 ◽  
Vol 45 (32) ◽  
pp. 12914-12923 ◽  
Author(s):  
Young-Seok Lee ◽  
Chandu V. V. M. Gopi ◽  
Mallineni Venkata-Haritha ◽  
Hee-Je Kim
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
High Performance ◽  
Photovoltaic Performance ◽  
Sensitized Solar Cells

A superior photovoltaic performance is obtained with a TiO2/ZnS/CdS/ZnS heterostructure with controlled recombination.

scholarly journals ZnS/SiO2 Passivation Layer for High-Performance of TiO2/CuInS2 Quantum Dot Sensitized Solar Cells

2018 ◽  
Author(s):  
Hee-Je Kim ◽  
Jin-Ho Bae ◽  
Hyunwoong Seo ◽  
Masaharu Shiratani ◽  
Chandu Venkata Veera Muralee Gopi
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
High Performance ◽  
Electrochemical Impedance ◽  
Photovoltaic Performance ◽  
Charge Recombination ◽  
Open Circuit ◽  
Passivation Layer ◽  
Electrolyte Interface ◽  
Sensitized Solar Cells

Suppressing the charge recombination at the interface of photoanode/electrolyte is the crucial way to enhance the photovoltaic performance of quantum dot sensitized solar cells (QDSSCs). In this scenario, ZnS/SiO2 blocking layer was deposited on TiO2/CuInS2 QDs to inhibit the charge recombination at photoanode/electrolyte interface. As a result, the TiO2/CuInS2/ZnS/SiO2 based QDSSCs delivers a power conversion efficiency (η) value of 4.63%, which is significantly higher than the 2.15% and 3.23% observed for QDSSCs with a TiO2/CuInS2 device and TiO2/CuInS2/ZnS, respectively. Electrochemical impedance spectroscopy and open circuit voltage decay analyses indicate that ZnS/SiO2 passivation layer on TiO2/CuInS2 suppress the charge recombination at the photoanode/electrolyte interface and prolongs the electron lifetime.

scholarly journals Zeolitic-imidazolate frameworks derived Pt-free counter electrodes for high-performance quantum dot-sensitized solar cells

2018 ◽  
Vol 5 (5) ◽  
pp. 180335 ◽  
Author(s):  
Wenjiao Xu ◽  
Yuxiu Sun ◽  
Bin Ding ◽  
Jingbo Zhang
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Quantum Dot ◽  
High Performance ◽  
Electrochemical Impedance ◽  
Photovoltaic Performance ◽  
Porous Film ◽  
Zeolitic Imidazolate Frameworks ◽  
Counter Electrodes ◽  
Sensitized Solar Cells

Zeolitic-imidazole frameworks (ZIFs), as novel porous materials, are attracting much attention in several fields due to their special advantages such as large specific surface area, versatile porosity and well-connected networks. Here, we develop a porous ZIF-derived catalytic thin film, which was coated on the conducting glass as a counter electrode (CE) to substitute costly platinum for quantum dot-sensitized solar cells (QDSSCs). A ZIF layer is first prepared by coating ZIF-67 powders on the conducting glass, followed by the careful calcination treatments in sulfur vapour (sulfuration) or nitrogen gas (carbonization). The structure and morphologies of the derived porous film are characterized by the measurements of XRD, SEM and BET, and the electrochemical properties in the polysulfide solution are evaluated by the measurements of Tafel curves and electrochemical impedance spectroscopies. The derived porous film is used as a CE to fabricate QDSSC with CdSe quantum dot-sensitized TiO 2 nanocrystalline thin film and the polysulfide solution. Compared with the photovoltaic performance of CdSe QDSSCs based on the CE prepared by the different sulfuration conditions, QDSSC based on the CE derived by the sulfuration for 30 min shows an excellent light-to-electric conversion efficiency of 3.77%, it is even higher than that of QDSSC based on Pt CE (2.98%). This work will open a new avenue to design a facile, low-cost and renewable CE for QDSSC.

High-Performance Solid-State PbS Quantum Dot-Sensitized Solar Cells Prepared by Introduction of Hybrid Perovskite Interlayer

2017 ◽  
Vol 9 (47) ◽  
pp. 41104-41110 ◽  
Author(s):  
Jin Hyuck Heo ◽  
Min Hyuk Jang ◽  
Min Ho Lee ◽  
Dong Hee Shin ◽  
Do Hun Kim ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solid State ◽  
Quantum Dot ◽  
High Performance ◽  
Hybrid Perovskite ◽  
Sensitized Solar Cells ◽  
Pbs Quantum Dot

scholarly journals ZnS/SiO2 Passivation Layer for High-Performance of TiO2/CuInS2 Quantum Dot Sensitized Solar Cells

Energies ◽  
2018 ◽  
Vol 11 (8) ◽  
pp. 1931
Author(s):  
Hee-Je Kim ◽  
Jin-Ho Bae ◽  
Hyunwoong Seo ◽  
Masaharu Shiratani ◽  
Chandu Venkata Veera Muralee Gopi
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
High Performance ◽  
Open Circuit Voltage ◽  
Charge Recombination ◽  
Open Circuit ◽  
Passivation Layer ◽  
Voltage Decay ◽  
Sensitized Solar Cells ◽  
Η Value

Suppressing the charge recombination at the interface of photoanode/electrolyte is the crucial way to improve the quantum dot sensitized solar cells (QDSSCs) performance. In this scenario, ZnS/SiO2 blocking layer was deposited on TiO2/CuInS2 QDs to inhibit the charge recombination at photoanode/electrolyte interface. As a result, the TiO2/CuInS2/ZnS/SiO2 based QDSSCs delivers a power conversion efficiency (η) value of 4.63%, which is much higher than the TiO2/CuInS2 (2.15%) and TiO2/CuInS2/ZnS (3.23%) based QDSSCs. Impedance spectroscopy and open circuit voltage decay analyses indicate that ZnS/SiO2 passivation layer on TiO2/CuInS2 suppress the charge recombination at the interface of photoanode/electrolyte and enhance the electron lifetime.

Achieving copper sulfide leaf like nanostructure electrode for high performance supercapacitor and quantum-dot sensitized solar cells

2018 ◽  
Vol 435 ◽  
pp. 666-675 ◽  
Author(s):  
Ikkurthi Kanaka Durga ◽  
S. Srinivasa Rao ◽  
Araveeti Eswar Reddy ◽  
Chandu V.V.M. Gopi ◽  
Hee-Je Kim
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
Copper Sulfide ◽  
High Performance ◽  
Sensitized Solar Cells

Charge generation performance enhancement by size-dependent Cu2GeSe3quantum dot-sensitized solar cells

2019 ◽  
Vol 12 (01) ◽  
pp. 1850090
Author(s):  
Zhou Liu ◽  
Zhuoyin Peng ◽  
Jianlin Chen ◽  
Wei Li ◽  
Jian Chen ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Solar Cells ◽  
Quantum Dot ◽  
Conversion Efficiency ◽  
Performance Enhancement ◽  
Photovoltaic Performance ◽  
Charge Generation ◽  
Transfer Property ◽  
Photon Conversion ◽  
Sensitized Solar Cells

Cu2GeSe3 quantum dot is introduced to instead of non-toxic CuInSe2 as a sensitizer for solar cells, which is employed to enhance the photovoltaic performance. Cu2GeSe3 quantum dots with various sizes are prepared by thermolysis process, which are employed for the fabrication of quantum dot-sensitized solar cells (QDSSC) according to assembly linking process. The optical absorption properties of the Cu2GeSe3 quantum dot-sensitized photo-electrodes have been obviously enhanced by the size optimization of quantum dots, which are better than that of CuInSe2-based photo-electrodes. Due to the balance on the deposition quantity and charge transfer property of the quantum dots, 3.9[Formula: see text]nm-sized Cu2GeSe3 QDSSC exhibits the highest current density value and incident photon conversion efficiency response, which result in a higher photovoltaic conversion efficiency than that of CuInSe2 QDSSC. The modulation of Cu2GeSe3 QDs will further improve the performance of photovoltaic devices.

A stoichiometric CdS interlayer for the photovoltaic performance enhancement of quantum-dot sensitized solar cells

2019 ◽  
Vol 21 (7) ◽  
pp. 3970-3975 ◽  
Author(s):  
Shixin Chen ◽  
Yinglin Wang ◽  
Shuang Lu ◽  
Yichun Liu ◽  
Xintong Zhang
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
Performance Enhancement ◽  
Sol Gel ◽  
Photovoltaic Performance ◽  
Stoichiometric Ratio ◽  
Gel Method ◽  
Sol Gel Method ◽  
Sensitized Solar Cells

We employed a sol–gel method to prepare a CdS interlayer (CdS-SG) with a stoichiometric ratio and then fabricated QDSCs.

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