Contribution of convection and diffusion to the cascade reaction kinetics of β-galactosidase/glucose oxidase confined in a microchannel

2016 ◽  
Vol 18 (21) ◽  
pp. 14460-14465 ◽  
Author(s):  
Zeng-Qiang Wu ◽  
Zhong-Qiu Li ◽  
Jin-Yi Li ◽  
Jing Gu ◽  
Xing-Hua Xia
Keyword(s):  
Reaction Kinetics ◽  
Glucose Oxidase ◽  
Cascade Reaction ◽  
Kinetics Of ◽  
And Diffusion

This study describes the contribution of convection and diffusion to a cascade reaction of β-Gal/GOx confined in a microchannel.

scholarly journals Experimental analysis and modelling of temperature- and humidity-controlled curing

2021 ◽  
Author(s):  
Rebecca Jennrich ◽  
Ahmet Burak Aydogdu ◽  
Alexander Lion ◽  
Michael Johlitz ◽  
Sarah Glaser ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Finite Element ◽  
Reaction Kinetics ◽  
Experimental Analysis ◽  
Hardening Process ◽  
Complex Hardening ◽  
Degree Of Curing ◽  
Kinetics Of ◽  
And Diffusion ◽  
Coupled Reaction

AbstractThere has been much discussion about modelling the reaction kinetics of a curing polymer. Typically, curing is described by the development of a variable called degree of curing as a function of temperature and time. The material considered in this paper exhibits two different curing mechanisms, namely temperature-activated and diffusion-based. To be able to describe the complex hardening process, the material is extensively analysed experimentally, and a thermodynamically consistent coupled reaction kinetics model is formulated based on experimental observations. This model enables the implementation of the thermal, caloric, and mechanical properties of the material into a finite element (FE) framework.

Factors affecting reaction kinetics of glucose oxidase

2002 ◽  
Vol 79 (1) ◽  
pp. 74 ◽  
Author(s):  
Kristin A. Johnson ◽  
Beth A. Kroa ◽  
Tony Yourey
Keyword(s):  
Reaction Kinetics ◽  
Glucose Oxidase ◽  
Factors Affecting ◽  
Kinetics Of

Kinetic and Thermodynamic Aspects of the Bainite Reaction in a Silicon Steel

1983 ◽  
Vol 21 ◽  
Author(s):  
G. Papadimitriou ◽  
J.M.R. Genin
Keyword(s):  
Experimental Data ◽  
Silicon Carbide ◽  
Reaction Kinetics ◽  
Silicon Content ◽  
Silicon Steel ◽  
Tentative Model ◽  
Secondary Stage ◽  
Two Stages ◽  
Kinetics Of ◽  
And Diffusion

ABSTRACTThe bainite reaction in an Fe - 3.85 wt pct Si - 0.9 wt pct C steel is studied by several experimental techniques in the range of 250–450°C.The high silicon content prevents the formation of cementite, so that the reaction is separated to two clearly distinct stages. In the primary stage ferrite forms alone, except at temperatures lower than 310°C where some carbides precipitate in it, and austenite becomes enriched in carbon. In the secondary stage occurring only above 400°C, the enriched austenite decomposes to ferrite and an unknown silicon carbide.The microstructure, the enrichment of the austenite and the overall reaction kinetics of the two stages are studied and are found to be consistent with a displacive mechanism of the bainite reaction.A tentative model, accounting for the competition of shear and diffusion, is proposed in order to fit our experimental data.

A Comparative Study of Thin-Film and Bulk Reaction Kinetics and Diffusion Path: the Ir/GaAs System

1988 ◽  
Vol 144 ◽  
Author(s):  
Kevin J. Schulz ◽  
Y. Austin Chang
Keyword(s):  
Thin Film ◽  
Reaction Kinetics ◽  
Equilibrium Phase ◽  
Bulk Diffusion ◽  
Diffusion Path ◽  
Phase Sequence ◽  
Bulk Reaction ◽  
Diffusion Paths ◽  
Kinetics Of ◽  
And Diffusion

ABSTRACTControl of the structure and chemistry at the interfaces of compound semiconductors is essential for the commercial use of these materials in electronic and optical technologies. This can only be achieved when the governing thermodynamics and kinetics of interfacial reactions are understood. Based primarily on the experience of metal/Si interactions, however, a prevailing belief was born that thin-film reactions follow a separate set of thermodynamic and kinetic “rules” which are different from bulk reactions. The intent of our work has been to not only characterize metal/GaAs contact reactions but also to rationalize these reactions with equilibrium phase diagrams and bulk metal/GaAs diffusion couple experiments. Through this approach, a better understanding of thin-film and bulk differences has been obtained.The Ir/GaAs system is used as an example. Phase formation and reaction kinetics were studied for 30 nm Ir films on (100) GaAs using TEM, XTEM, and AEM. Bulk diffusion between 0.25 mm thick Ir foil and (100) GaAs wafers was studied with SEM and electron probe microanalysis (EPMA). The diffusion paths and kinetics were the same for thin-film and bulk. The phase sequence Ir/IrGa/IrAs2/GaAs formed for all diffusion couples. Reaction kinetics were parabolic with an activation energy of 3.0 eV for both thin-film and bulk, and the data was colinear in an Arrhenius plot. Reacted layer morphology in both cases was layered. The effects of grain size, crystallographic texturing, and the relative diffusivities of the components on the reaction mechanisms in bulk versus thin-film reactions are considered.

Impact Of Synthesis Route on the Water Oxidation Kinetics of Hematite Photoanodes

2020 ◽  
Author(s):  
Camilo A. Mesa ◽  
Ludmilla Steier ◽  
Benjamin Moss ◽  
Laia Francàs ◽  
James E. Thorne ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Reaction Kinetics ◽  
Water Oxidation ◽  
Oxidation Kinetics ◽  
Oxidation Reaction ◽  
Charge Accumulation ◽  
Optical Signals ◽  
Current Voltage ◽  
Voltage Performance ◽  
Kinetics Of

<p><i>Operando</i> spectroelectrochemical analysis is used to determine the water oxidation reaction kinetics for hematite photoanodes prepared using four different synthetic procedures. Whilst these photoanodes exhibit very different current / voltage performance, their underlying water oxidation kinetics are found to be almost invariant. Lower photoanode performance was found to correlate with the observation of optical signals indicative of charge accumulation in mid-gap oxygen vacancy states, indicating these states do not contribute directly to water oxidation.</p>

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