Kinetic and Thermodynamic Aspects of the Bainite Reaction in a Silicon Steel

1983 ◽  
Vol 21 ◽  
Author(s):  
G. Papadimitriou ◽  
J.M.R. Genin

ABSTRACTThe bainite reaction in an Fe - 3.85 wt pct Si - 0.9 wt pct C steel is studied by several experimental techniques in the range of 250–450°C.The high silicon content prevents the formation of cementite, so that the reaction is separated to two clearly distinct stages. In the primary stage ferrite forms alone, except at temperatures lower than 310°C where some carbides precipitate in it, and austenite becomes enriched in carbon. In the secondary stage occurring only above 400°C, the enriched austenite decomposes to ferrite and an unknown silicon carbide.The microstructure, the enrichment of the austenite and the overall reaction kinetics of the two stages are studied and are found to be consistent with a displacive mechanism of the bainite reaction.A tentative model, accounting for the competition of shear and diffusion, is proposed in order to fit our experimental data.

2019 ◽  
Vol 45 ◽  
pp. 146867831989141
Author(s):  
Bahador Abolpour ◽  
Rahim Shamsoddini

The reaction kinetics of carbon reduction of silica were investigated using thermodynamic concepts and by fitting to relevant models the experimental data obtained for this reduction using a thermogravimetric unit in the temperature range of 1566 to 1933 K. The results show that the only way to produce SiC in this reduction is the reaction of Si, SiO, or SiO2 at the surface or by diffusion of SiO inside the carbon particles while CO and CO2 have no direct effect on the process. The controlling step of this reduction at temperatures lower than 1750 K is the chemical gas–solid or solid–solid reaction at the surface of the carbon particles, while at higher temperatures, the rate of SiO diffusing inside the carbon particles controls the rate of this reduction.


Energies ◽  
2019 ◽  
Vol 12 (3) ◽  
pp. 516 ◽  
Author(s):  
Michela Lucian ◽  
Maurizio Volpe ◽  
Luca Fiori

Olive trimmings (OT) were used as feedstock for an in-depth experimental study on the reaction kinetics controlling hydrothermal carbonization (HTC). OT were hydrothermally carbonized for a residence time τ of up to 8 h at temperatures between 180 and 250 °C to systematically investigate the chemical and energy properties changes of hydrochars during HTC. Additional experiments at 120 and 150 °C at τ = 0 h were carried out to analyze the heat-up transient phase required to reach the HTC set-point temperature. Furthermore, an original HTC reaction kinetics model was developed. The HTC reaction pathway was described through a lumped model, in which biomass is converted into solid (distinguished between primary and secondary char), liquid, and gaseous products. The kinetics model, written in MATLABTM, was used in best fitting routines with HTC experimental data obtained using OT and two other agro-wastes previously tested: grape marc and Opuntia Ficus Indica. The HTC kinetics model effectively predicts carbon distribution among HTC products versus time with the thermal transient phase included; it represents an effective tool for R&D in the HTC field. Importantly, both modeling and experimental data suggest that already during the heat-up phase, biomass greatly carbonizes, in particular at the highest temperature tested of 250 °C.


1976 ◽  
Vol 29 (1) ◽  
pp. 27
Author(s):  
JH Taplin

The index-of-reaction equation (i.r.e.): dF/dtZ = kZ(l - βF)m is compared with a generalized Prout-Tompkins equation (g.P.T.e.): dF/dt = kn(l - βF)y With the boundary condition F = 0, t = 0 the equations are equivalent for z = 2 or m = 0 or β ≤ 1 and the i.r.e, is closely approximated by the g.P.T.e. for other values of the parameters by use of the following approximation ∫(1- F)-m dF ≈ AF(1-BF)5 The parameter s is a function of m. Both A and B are close to unity for 1/3 < m < 3. The i.r.e. is recommended as being more useful than the g.P.T.e. because the i.r.e. has a better theoretical basis and because it is more readily integrated and fitted to experimental data.


2016 ◽  
Vol 697 ◽  
pp. 572-575
Author(s):  
Xue Qing Yang ◽  
Nai Peng ◽  
Cheng Ji Deng

The kinetics of in-situ β- Sialon bonded Al2O3-C (SAC) refractories were investigated by TGA techniques via isothermal nitridation experiments at different temperatures. The result show that the nitridation process of in-situ β-Sialon bonded Al2O3-C refractories can be divided into two stages: the nitridation reaction rate controlling stage in the first 10 min, and the apparent activation energy of nitridation reaction is 370 kJ/mol ; then the reaction is controlled by both chemical reaction and diffusion rate in the following 110 min, the apparent activation energy of nitridation reaction is 410 kJ/mol.


2020 ◽  
Vol 4 (1) ◽  
pp. 8 ◽  
Author(s):  
Rainer Wendel ◽  
Philipp Rosenberg ◽  
Michael Wilhelm ◽  
Frank Henning

The reaction kinetics of anionic polymerization for the production of anionic polyamide 6 (aPA6) are widely understood. It is also known that this reaction is very sensitive to external influences such as water. This paper analyzes and quantifies the influence of water on the reaction of ε-caprolactam to anionic polyamide 6. A kinetic model is developed in which the reactive molecules of the activator and catalyst are defined as variables and the concentrations of activator and catalyst as well as water content are considered. A model for the calculation of the reaction kinetics is established and validated with experimental data. The developed model can be used to predict the influence and compensation of water by addition of surplus activator and catalyst during the polymerization of ε-caprolactam.


2008 ◽  
Vol 20 (32) ◽  
pp. 325216 ◽  
Author(s):  
K L Wallis ◽  
J K Patyk ◽  
T W Zerda

2012 ◽  
Vol 2012 ◽  
pp. 1-10
Author(s):  
Marina G. Mynbaeva ◽  
Evgeny L. Pankratov ◽  
Evgeniy N. Mokhov ◽  
Karim D. Mynbaev

Experimental data on diffusion of erbium and vanadium in porous and nonporous silicon carbide at 1700 and 2200°C have been used for modelling diffusion in porous SiC. It is shown that the consideration of pore structure modification under annealing via vacancy redistribution allows for satisfactory description of dopant diffusion. As expected, important contribution to the diffusion in the porous medium is found to be made by the walls of the pores: in SiC, the vacancy surface diffusion coefficient on the walls appears to exceed that in the bulk of the material by an order of magnitude. When thermal treatment transforms pore channels into closed voids, pathways for accelerated diffusion cease to exist and diffusion rates in porous and nonporous SiC become similar.


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