Distribution pattern and allocation of defects in hydrogenated ZnO thin films
2016 ◽
Vol 18
(23)
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pp. 16033-16038
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A polycrystalline ZnO thin film prepared by atomic layer deposition was annealed in hydrogen at 10 bar and 350–450 °C.
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2001 ◽
Vol 65
(1-4)
◽
pp. 125-132
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2019 ◽
Vol 56
(3)
◽
pp. 302-307
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2005 ◽
Vol 15
(11)
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pp. 741-744
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2010 ◽
Vol 7
(6)
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pp. 1550-1552
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2008 ◽
Vol 14
(4)
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pp. 1053-1057
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