Correlation of growth temperature with stress, defect states and electronic structure in an epitaxial GaN film grown on c-sapphire via plasma MBE

2016 ◽  
Vol 18 (11) ◽  
pp. 8005-8014 ◽  
Author(s):  
Shibin Krishna ◽  
Neha Aggarwal ◽  
Monu Mishra ◽  
K. K. Maurya ◽  
Sandeep Singh ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Surface Morphology ◽  
Electronic Properties ◽  
Significant Influence ◽  
Growth Temperature ◽  
Defect States ◽  
Stress Engineering ◽  
Gan Film

Stress engineering is shown to have a significant influence on the defect states, surface morphology and electronic properties of a GaN film grown on c-sapphire.

Nucleation and Heterointerface Structure of InAs Epilayers Grown on InP Substrates

1992 ◽  
Vol 280 ◽  
Author(s):  
K. S. Chandra Sekhar ◽  
A. K. Ballal ◽  
L. Salamanca-Riba ◽  
D. L. Partin
Keyword(s):  
Surface Morphology ◽  
Electronic Properties ◽  
Growth Temperature ◽  
High Speed ◽  
Interface Roughness ◽  
Structural Defects ◽  
Lower Growth ◽  
Substrate Interface ◽  
Film Substrate ◽  
Inp Substrates

ABSTRACTHeteroepitaxial growth of indium arsenide films on indium phosphide substrates is being actively pursued since the electronic properties of these films make them promising materials for optoelectronic and other high speed devices. The various structural aspects of the film that affect their electronic properties are structural defects like dislocations, film-substrate interface roughness and chemical inhomogeneities. In InAs films, electrons accumulate at the film-air interface, making surface morphology an important factor that decides the electronic properties. The InAs films used in this study were grown on InP substrates by metal organic vapor deposition, at different temperatures. A higher growth temperature not only resulted in poor surface morphology of the film, but also created a rough film-substrate interface. However, at all deposition temperatures, the film-substrate interfaces are sharp. At lower growth temperature, the interfaces were flat. Films grown at lower temperatures had good surface morphology and a flat and shaip heterointerface.

scholarly journals Indirect bandgap, optoelectronic properties, and photoelectrochemical characteristics of high-purity Ta3N5 photoelectrodes

2021 ◽  
Vol 9 (36) ◽  
pp. 20653-20663
Author(s):  
Johanna Eichhorn ◽  
Simon P. Lechner ◽  
Chang-Ming Jiang ◽  
Giulia Folchi Heunecke ◽  
Frans Munnik ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Electronic Properties ◽  
High Purity ◽  
Optoelectronic Properties ◽  
Precise Control ◽  
Insight Into

The (opto)electronic properties of Ta3N5 photoelectrodes are often dominated by defects, but precise control of these defects provides new insight into the electronic structure, photocarrier transport, and photoelectrochemical function.

scholarly journals Hole-transporting side-chain polystyrenes based on TCTA with tuned glass transition and optimized electronic properties

RSC Advances ◽  
2015 ◽  
Vol 5 (101) ◽  
pp. 83122-83128 ◽  
Author(s):  
Felix R. P. Limberg ◽  
Arunas Miasojedovas ◽  
Patrick Pingel ◽  
Felix Reisbeck ◽  
Silvia Janietz ◽  
...  
Keyword(s):  
Glass Transition ◽  
Electronic Properties ◽  
Significant Influence ◽  
Life Time ◽  
Side Chain ◽  
Hole Transporting ◽  
Solution Processable

The development of crosslinkable materials for solution processable OLEDs presents challenges, especially regarding the adjustment of the glass transition, which has a significant influence on crosslinking kinetics and device life-time.

Theory Of 3d Transition Metal Defects In 3C SiC

1996 ◽  
Vol 442 ◽  
Author(s):  
Harald Overhof
Keyword(s):  
Electronic Structure ◽  
Transition Metal ◽  
Electronic Properties ◽  
Crystal Field ◽  
High Spin ◽  
Crystal Field Splitting ◽  
Large Crystal ◽  
Field Splitting ◽  
Vacancy Model ◽  
The Difference

AbstractThe electronic properties of 3d transition metal (TM) defects located on one of the four different tetrahedral positions in 3C SiC are shown to be quite site-dependent. We explain the differences for the 3d TMs on the two substitutional sites within the vacancy model: the difference of the electronic structure between the carbon vacancy VC and the silicon vacancy VSi is responsible for the differences of the 3d TMs. The electronic properties of 3d TMs on the two tetrahedral interstitial sites differ even more: the TMs surrounded tetrahedrally by four Si atoms experience a large crystal field splitting while the tetrahedral C environment does not give rise to a significant crystal field splitting at all. It is only in the latter case that high-spin configurations are predicted.

Properties comparison of GaN epilayers deposited under different growth temperatures

2011 ◽  
Vol 19 (1) ◽  
Author(s):  
P. Wang ◽  
H. Yan ◽  
B. Cao ◽  
W. Wei ◽  
Z. Gan ◽  
...  
Keyword(s):  
Growth Temperature ◽  
Structural Characteristics ◽  
Chemical Vapour ◽  
Optimal Growth ◽  
Good Method ◽  
Test Results ◽  
Temperature Deposition ◽  
Metalorganic Chemical Vapour Deposition ◽  
Gan Film

AbstractUndoped GaN epilayers were grown on c-plane sapphire substrates under different growth temperatures by metalorganic chemical vapour deposition (MOCVD). The optical and structural characteristics of these grown samples were studied and compared. It was found that the crystalline quality of GaN film deposited at 1050°C was better that of other samples. Photoluminescence spectra showed that the intensities of yellow luminescence band of the samples decreased as the growth temperature increased. All above test results demonstrate that high temperature deposition can serve as a good method for high-quality GaN epilayer growth and there exists an optimal growth temperature.

A multi-technique comparison of the electronic properties of pristine and nitrogen-doped polycrystalline SnO2

2016 ◽  
Vol 18 (32) ◽  
pp. 22617-22627 ◽  
Author(s):  
S. Livraghi ◽  
N. Barbero ◽  
S. Agnoli ◽  
C. Barolo ◽  
G. Granozzi ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Electronic Properties ◽  
Spectroscopic Techniques ◽  
Nitrogen Doped ◽  
Technique Comparison

The electronic structure of nitrogen doped tin(iv) oxide (SnO2) materials prepared in the form of nanometric powders has been characterized employing a variety of spectroscopic techniques.

Adjustment engineering in the surface morphology structure and electronic properties of TCNQ-based nanoarrays for oxygen evolution reaction

2019 ◽  
Vol 236 ◽  
pp. 346-349 ◽  
Author(s):  
Jiaxin Wang ◽  
Wenchao Zhang ◽  
Zilong Zheng ◽  
Jingping Liu ◽  
Chunpei Yu ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Electronic Properties ◽  
Oxygen Evolution ◽  
Oxygen Evolution Reaction

DFT Investigation of Substitution Effects on the Electronic Properties of Perylene Bisimides Derivatives

2014 ◽  
Vol 513-517 ◽  
pp. 347-350
Author(s):  
Bo Wei Chen ◽  
Ye Wei Xu ◽  
Lin Zhang
Keyword(s):  
Electronic Structure ◽  
Electronic Properties ◽  
Absorption Spectra ◽  
Electronic Structures ◽  
Semiconductor Materials ◽  
Substitution Effects ◽  
Density Functions ◽  
Computational Results ◽  
Good Accordance ◽  
Perylene Bisimides

Perylene Bisimides Derivatives (PBIs) are typical semiconductor materials. The electronic structures of PBIs were successfully investigated by density functions theory (DFT). The computational results were in the good accordance with the experimental UV-vis spectra. Additionally, the electronic structure and the variational UV-vis absorption spectra of PBIs were explained.

CHANGES INDUCED IN THE SURFACE ELECTRONIC STRUCTURE OF Be(0001) AFTER Si ADSORPTION

2002 ◽  
Vol 09 (02) ◽  
pp. 687-691
Author(s):  
L. I. JOHANSSON ◽  
C. VIROJANADARA ◽  
T. BALASUBRAMANIAN
Keyword(s):  
Electronic Structure ◽  
Band Structure ◽  
Band Gap ◽  
Electronic Properties ◽  
Surface State ◽  
Core Level ◽  
Clean Surface ◽  
Core Level Spectrum ◽  
Surface Band ◽  
Surface Electronic Structure

A study of effects induced in the Be 1s core level spectrum and in the surface band structure after Si adsorption on Be(0001) is reported. The changes in the Be 1s spectrum are quite dramatic. The number of resolvable surface components and the magnitude of the shifts do decrease and the relative intensities of the shifted components are drastically different compared to the clean surface. The surface band structure is also strongly affected after Si adsorption and annealing. At [Formula: see text] the surface state is found to move down from 2.8 to 4.1 eV. The band also splits at around 0.5 Å-1 along both the [Formula: see text] and [Formula: see text] directions. At [Formula: see text] and beyond [Formula: see text] only one surface state is observed in the band gap instead of the two for the clean surface. Our findings indicate that a fairly small amount of Si in the outer atomic layers strongly modifies the electronic properties of these layers.

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