scholarly journals Direct and quasi-direct band gap silicon allotropes with remarkable stability

2016 ◽  
Vol 18 (14) ◽  
pp. 9682-9686 ◽  
Author(s):  
Chaoyu He ◽  
Chunxiao Zhang ◽  
Jin Li ◽  
Xiangyang Peng ◽  
Lijun Meng ◽  
...  
Keyword(s):  
Solar Cell ◽  
Band Gap ◽  
Low Energy ◽  
Solar Cell Application ◽  
Direct Band Gap ◽  
Direct Band

Promising low energy direct or quasi-direct band gap semiconductors for solar cell application.

Optoelectronic Analysis of CdGa2X4 (X= S, Se): A Promising Material for Solar Cells

2017 ◽  
Vol 900 ◽  
pp. 69-73 ◽  
Author(s):  
Pancham Kumar ◽  
Jagrati Sahariya ◽  
Amit Soni ◽  
K.C. Bhamu
Keyword(s):  
Solar Cell ◽  
Band Gap ◽  
Density Of States ◽  
Density Functional ◽  
Visible Spectrum ◽  
Full Potential ◽  
Functional Theory ◽  
Augmented Plane Wave ◽  
Direct Band Gap ◽  
Direct Band

In this paper, the optoelectronic nature of the CdGa2X4 (X = S, Se) solar cell materials are examined using full potential linear augmented plane wave (FP-LAPW) method as embodied in WIEN2K code. In present computation, we have used most suitable modified Backe-Johnson (mBJ) potential under the framework of density functional theory (DFT). The calculated electronic properties like energy band structure and density of states spectra show that these materials exhibit a direct band gap (Γ–Γ) result of 3.22 eV and 2.36 eV for CdGa2S4 and CdGa2Se4 compounds, respectively. Absorption spectra for CdGa2X4 (X = S, Se) compounds have been studied and it has been found that above the band gap, absorption are taking place and it covers wide visible spectrum energy range. On the basis of calculated band gap, density of states and absorption coefficient spectra, it is found that these compounds can be suitably applicable in optoelectronic devices such as solar cell. The evaluated properties pose well agreement with available experimental data.

scholarly journals Indium Sulfide and Ternary In-S-O Nanowires for Optoelectronic Applications

2012 ◽  
Vol 18 (S5) ◽  
pp. 121-122 ◽  
Author(s):  
J. Bartolomé ◽  
D. Maestre ◽  
A. Cremades ◽  
J. Piqueras
Keyword(s):  
Solar Cell ◽  
Band Gap ◽  
Material Properties ◽  
Room Temperature ◽  
High Efficiency ◽  
Processing Parameters ◽  
Indium Sulfide ◽  
Direct Band Gap ◽  
Direct Band ◽  
Optoelectronic Applications

Indium sulfide (In2S3) is a promising semiconductor material for window layers in solar cell devices and other optoelectronic applications as it presents a direct band gap around 2.0 eV at room temperature, and large photosensitivity and photoconductivity. The presence of several polymorphic structures depending on the processing parameters is also of interest to tailor the required material properties for different applications. It is currently being investigated for high efficiency solar cell based on CuInS2-In2S3 heterostructures, replacing CdS layers. Few studies have been reported on nanostructured In2S3 grown by several methods.

Analysis of thin-film direct band-gap SiGeSn alloy based heterostructure solar cell featuring SiGe absorber layer

Optik ◽  
2020 ◽  
Vol 202 ◽  
pp. 163715 ◽  
Author(s):  
Md Sadullah ◽  
Jaspinder Kaur ◽  
Rikmantra Basu ◽  
Ajay K. Sharma
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Band Gap ◽  
Absorber Layer ◽  
Direct Band Gap ◽  
Direct Band

C72: A novel low energy and direct band gap carbon phase

2020 ◽  
Vol 384 (16) ◽  
pp. 126325 ◽  
Author(s):  
Jian-Li Ma ◽  
Dan-Li Song ◽  
Yi-Long Wu ◽  
Zhi-Fen Fu ◽  
Jian-Ping Zhou ◽  
...  
Keyword(s):  
Band Gap ◽  
Low Energy ◽  
Carbon Phase ◽  
Direct Band Gap ◽  
Direct Band

Lead-free perovskite ferroelectric thin films with narrow direct band gap suitable for solar cell applications

2017 ◽  
Vol 95 ◽  
pp. 56-60 ◽  
Author(s):  
Qingfeng Zhang ◽  
Fang Xu ◽  
Maji Xu ◽  
Lei Li ◽  
Yinmei Lu ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Band Gap ◽  
Ferroelectric Thin Films ◽  
Lead Free ◽  
Direct Band Gap ◽  
Direct Band

Photovoltaic Performance of Thin-Film CdTe for Solar Cell Applications

2021 ◽  
Vol 10 (1) ◽  
pp. 91-97
Author(s):  
A. Hendi ◽  
R. Alkhraif ◽  
H. Alshehri ◽  
F. AlKallas ◽  
M. Almoneef ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Optical Absorption ◽  
Band Gap ◽  
Photovoltaic Performance ◽  
Open Circuit ◽  
Potential Candidate ◽  
Direct Band Gap ◽  
Theoretical Support ◽  
Direct Band

In the current investigation, we report a theoretical study to acquire the highest feasible efficiency of cadmium telluride (CdTe) thin-films. It is well recognized that CdTe crystallizes in cubic zinc-blende structure and its direct band gap of 1.5 eV turned it out as a potential candidate for photovoltaic (PV) applications. Our calculations are founded on Shockley-Queisser (SQ) limit to simulate the open-circuit voltage, current density, and filling factor versus the variation of photon energy up to 4.0 eV. These key parameters of SQ change with the variation of energy between 0.3 to 3.5 eV. This is owing to the strong optical absorption (> 104 cm−1) and direct band gap of 1.5 eV, which make CdTe thin-film suitable for single junction solar cell and ideal for PV applications. It is observed that the optical absorption enhances as the thickness of the absorbed layer increases. This will effectively provide a theoretical support to the industry of global solar energy that is anticipated to be sustainable in the future.

scholarly journals Direct and quasi-direct band gap silicon allotropes with low energy and strong absorption in the visible for photovoltaic applications

2020 ◽  
Vol 18 ◽  
pp. 103271 ◽  
Author(s):  
Wei Zhang ◽  
Changchun Chai ◽  
Qingyang Fan ◽  
Yanxing Song ◽  
Yintang Yang
Keyword(s):  
Band Gap ◽  
Low Energy ◽  
Strong Absorption ◽  
Direct Band Gap ◽  
Photovoltaic Applications ◽  
Direct Band
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