Photovoltaic Performance of Thin-Film CdTe for Solar Cell Applications

2021 ◽  
Vol 10 (1) ◽  
pp. 91-97
Author(s):  
A. Hendi ◽  
R. Alkhraif ◽  
H. Alshehri ◽  
F. AlKallas ◽  
M. Almoneef ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Optical Absorption ◽  
Band Gap ◽  
Photovoltaic Performance ◽  
Open Circuit ◽  
Potential Candidate ◽  
Direct Band Gap ◽  
Theoretical Support ◽  
Direct Band

In the current investigation, we report a theoretical study to acquire the highest feasible efficiency of cadmium telluride (CdTe) thin-films. It is well recognized that CdTe crystallizes in cubic zinc-blende structure and its direct band gap of 1.5 eV turned it out as a potential candidate for photovoltaic (PV) applications. Our calculations are founded on Shockley-Queisser (SQ) limit to simulate the open-circuit voltage, current density, and filling factor versus the variation of photon energy up to 4.0 eV. These key parameters of SQ change with the variation of energy between 0.3 to 3.5 eV. This is owing to the strong optical absorption (> 104 cm−1) and direct band gap of 1.5 eV, which make CdTe thin-film suitable for single junction solar cell and ideal for PV applications. It is observed that the optical absorption enhances as the thickness of the absorbed layer increases. This will effectively provide a theoretical support to the industry of global solar energy that is anticipated to be sustainable in the future.

Analysis of thin-film direct band-gap SiGeSn alloy based heterostructure solar cell featuring SiGe absorber layer

Optik ◽  
2020 ◽  
Vol 202 ◽  
pp. 163715 ◽  
Author(s):  
Md Sadullah ◽  
Jaspinder Kaur ◽  
Rikmantra Basu ◽  
Ajay K. Sharma
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Band Gap ◽  
Absorber Layer ◽  
Direct Band Gap ◽  
Direct Band

New tailored organic semiconductors thin films for optoelectronic applications

2021 ◽  
Author(s):  
Dinesh Pathak ◽  
Sanjay Kumar ◽  
Sonali Andotra ◽  
Jibin Thomas ◽  
Navneet Kaur ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solar Cell ◽  
Optical Absorption ◽  
Band Gap ◽  
Organic Semiconductors ◽  
Low Cost ◽  
Organic Thin Film ◽  
Vis Spectroscopy ◽  
Carbon Based

In this study, we have investigated new tailored organic semiconductors materials for the optoelectronic application, such as organic solar cells. The carbon-based organic semiconductor material has promising advantages in organic thin-film form. Moreover, due to its low cost, organic thin-films are suitable and cheaper than inorganic thin-film. The band gap of organic semiconductors materials can be tuned and mostly lies between 2.0eV to 4eV and the optical absorption edge of organic semiconductors typically lies in between 1.7eV to 3eV. They can be easily tailored by modifying the carbon chain and legends and looks promising for engineering the band gap to harness solar spectrum. In this work, with new tailored organic semiconductors the solution route is explored which is low cost processing method. (Anthracen-9-yl) methylene naphthalene-1-amine, 4-(anthracen-9-ylmethyleneamino)-1,5dimethyl-2-phenyl-1H-pyrazol-3-one and N-(anthracen-9-ylmethyl)-3,4-dimethoxyaniline thin-films are processed by spin coating method with changing concentration such as 0.05 wt% and 0.08 wt%. Thin films of Organic semiconductors were prepared on glass substrate and annealed at 55°C. The structural and optical behaviour of (Anthracen-9-yl) methylene naphthalene-1-amine, 4-(anthracen-9-ylmethyleneamino)-1,5dimethyl-2-phenyl-1H-pyrazol-3-one and N-(anthracen-9-ylmethyl)-3,4-dimethoxyaniline organic semiconductors thin films is studied by X-ray diffraction (XRD), Scanning electron microscopy (SEM) and UV-Visible Spectroscopy technique. The XRD data of synthesized sample suggests the Nano crystallinity of the Organic layers. The SEM micrographs shows the dense packing when we increase the wt% 0.05 to 0.08. Analysis of the optical absorption measurements found that the engineered band gap of synthesized thin films are 2.18eV, 2.35eV, 2.36eV, 2.52eV and 2.65eV which suggest suitability for applications of Optoelectronic devices such as solar cell. Such light weight, eco-friendly and disposable new carbon based materials seems to have potential to replace other traditional hazardous heavy materials for future eco-friendly flat fast electronics. Keywords: Thin-film, solar cell, tailored organic semiconductors, XRD, SEM, UV-Vis spectroscopy.

scholarly journals Optical Absorption Exhibits Pseudo-Direct Band Gap of Wurtzite Gallium Phosphide

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Bruno C. da Silva ◽  
Odilon D. D. Couto ◽  
Hélio T. Obata ◽  
Mauricio M. de Lima ◽  
Fábio D. Bonani ◽  
...  
Keyword(s):  
Optical Absorption ◽  
Band Gap ◽  
Gallium Phosphide ◽  
Direct Band Gap ◽  
Direct Band

scholarly journals Author Correction: Optical Absorption Exhibits Pseudo-Direct Band Gap of Wurtzite Gallium Phosphide

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Bruno C. da Silva ◽  
Odilon D. D. Couto ◽  
Hélio T. Obata ◽  
Mauricio M. de Lima ◽  
Fábio D. Bonani ◽  
...  
Keyword(s):  
Optical Absorption ◽  
Band Gap ◽  
Gallium Phosphide ◽  
Direct Band Gap ◽  
Direct Band

Carbon nanotube: An indirect ~ 0 eV band gap material

2016 ◽  
pp. 3546-3550
Author(s):  
Maheshwar Sharon ◽  
S. S. Kawale ◽  
Rakesh Afre ◽  
Madhuri Sharon ◽  
C. H. Bhosale
Keyword(s):  
Thin Film ◽  
Carbon Nanotube ◽  
Band Gap ◽  
Carrier Concentration ◽  
Hydrogen Atmosphere ◽  
Sem Analysis ◽  
Direct Band Gap ◽  
Direct Band ◽  
Indirect Band Gap ◽  
First Time

Thin film of carbon was synthesized from camphor (C10H16O) by CVD technique in hydrogen atmosphere. For the first time it is confirmed the presence of almost zero indirect band gap in addition to its direct band gap.. Carrier concentration with intrinsic carbon is found to be around 1021 n/cm3. It is suggested that unless the zero indirect band gap is  increased carbon thin film   cannot be used for making a p:n junction. XRD, Raman and SEM analysis are performed.

Optoelectronic Analysis of CdGa2X4 (X= S, Se): A Promising Material for Solar Cells

2017 ◽  
Vol 900 ◽  
pp. 69-73 ◽  
Author(s):  
Pancham Kumar ◽  
Jagrati Sahariya ◽  
Amit Soni ◽  
K.C. Bhamu
Keyword(s):  
Solar Cell ◽  
Band Gap ◽  
Density Of States ◽  
Density Functional ◽  
Visible Spectrum ◽  
Full Potential ◽  
Functional Theory ◽  
Augmented Plane Wave ◽  
Direct Band Gap ◽  
Direct Band

In this paper, the optoelectronic nature of the CdGa2X4 (X = S, Se) solar cell materials are examined using full potential linear augmented plane wave (FP-LAPW) method as embodied in WIEN2K code. In present computation, we have used most suitable modified Backe-Johnson (mBJ) potential under the framework of density functional theory (DFT). The calculated electronic properties like energy band structure and density of states spectra show that these materials exhibit a direct band gap (Γ–Γ) result of 3.22 eV and 2.36 eV for CdGa2S4 and CdGa2Se4 compounds, respectively. Absorption spectra for CdGa2X4 (X = S, Se) compounds have been studied and it has been found that above the band gap, absorption are taking place and it covers wide visible spectrum energy range. On the basis of calculated band gap, density of states and absorption coefficient spectra, it is found that these compounds can be suitably applicable in optoelectronic devices such as solar cell. The evaluated properties pose well agreement with available experimental data.

scholarly journals Indium Sulfide and Ternary In-S-O Nanowires for Optoelectronic Applications

2012 ◽  
Vol 18 (S5) ◽  
pp. 121-122 ◽  
Author(s):  
J. Bartolomé ◽  
D. Maestre ◽  
A. Cremades ◽  
J. Piqueras
Keyword(s):  
Solar Cell ◽  
Band Gap ◽  
Material Properties ◽  
Room Temperature ◽  
High Efficiency ◽  
Processing Parameters ◽  
Indium Sulfide ◽  
Direct Band Gap ◽  
Direct Band ◽  
Optoelectronic Applications

Indium sulfide (In2S3) is a promising semiconductor material for window layers in solar cell devices and other optoelectronic applications as it presents a direct band gap around 2.0 eV at room temperature, and large photosensitivity and photoconductivity. The presence of several polymorphic structures depending on the processing parameters is also of interest to tailor the required material properties for different applications. It is currently being investigated for high efficiency solar cell based on CuInS2-In2S3 heterostructures, replacing CdS layers. Few studies have been reported on nanostructured In2S3 grown by several methods.

Synthesis of Colloidal InP/ZnS Nanocrystals for a Photosensitizer

2012 ◽  
Vol 1409 ◽  
Author(s):  
Seungyong Lee ◽  
Vanga R. Reddy ◽  
Jiang Wu ◽  
Rick Eyi ◽  
Omar Manasreh
Keyword(s):  
Optical Absorption ◽  
Band Gap ◽  
Chemical Stability ◽  
Semiconductor Nanocrystals ◽  
Solar Spectrum ◽  
Core Shell ◽  
Direct Band Gap ◽  
Direct Band ◽  
Zns Nanocrystals ◽  
Spectrum Region

ABSTRACTIts intrinsic nontoxicity makes the direct band gap InP/ZnS core/shell be one of the most promising semiconductor nanocrystals for optoelectric applications, with the advantage of tuning the optical absorption range in the desired solar spectrum region. Highly luminescent and monodisperse InP/ZnS nanocrystals were synthesized in a non-coordinating solvent under a thorough degassing process. By varying synthesis scheme, different size InP/ZnS nanocrystals were grown. For the purpose of ensuring air stability, ZnS shell was grown. This ZnS shell improves the chemical stability in terms of oxidation prevention. Measurements of absorption and emission were performed on different InP/ZnS nanocrystals with different sizes. As expected, the measurements show a red-shift as the size of the InP/ZnS nanocrystals increased.

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