scholarly journals Rapid vapour deposition and in situ melt crystallization for 1 min fabrication of 10 μm-thick crystalline silicon films with a lateral grain size of over 100 μm

CrystEngComm ◽  
2016 ◽  
Vol 18 (19) ◽  
pp. 3404-3410 ◽  
Author(s):  
Y. Yamasaki ◽  
K. Hasegawa ◽  
T. Osawa ◽  
S. Noda
Keyword(s):  
Grain Size ◽  
Vapour Deposition ◽  
Crystalline Silicon ◽  
Silicon Films ◽  
Melt Crystallization

Pulsed Laser-Induced Amorphization of Silicon Films

1991 ◽  
Vol 235 ◽  
Author(s):  
T. Sameshima ◽  
S. Usui
Keyword(s):  
Grain Size ◽  
Film Thickness ◽  
Silicon Film ◽  
Pulsed Laser ◽  
Temperature Sensing ◽  
Silicon Films ◽  
Molten Silicon ◽  
Quartz Substrates ◽  
Xecl Excimer Laser

ABSTRACTAmorphization of silicon films occurred through homogeneous solidification of molten silicon layers on quartz substrates induced by irradiation with a 30ns-XeCl excimer laser. The crystalline nucleation rate was obtained to be 8×1030m−3s−1. Silicon films were completely amorphized for films thinner than 18nm. Complete amorphizatoin is brought about by reduced grain size and reduced recalescence as the film thickness decreases. Recalescence was observed in situusing transient thermometry with a platinum-temperature-sensing layer when a 15nm-thick silicon film was amorphized.

A Simulation Study for Optimizing Grain Size in Poly-Crystalline Silicon Material Using Impedance Spectroscopy

Silicon ◽  
2021 ◽  
Author(s):  
Umakanth V. ◽  
Ajit Singh ◽  
Sanjai Kumar ◽  
Neeraj Tyagi ◽  
V. K. Kaul ◽  
...  
Keyword(s):  
Grain Size ◽  
Impedance Spectroscopy ◽  
Simulation Study ◽  
Crystalline Silicon ◽  
Silicon Material

Amorphous carbon/crystalline silicon high voltage heterojunction diode prepared by photochemical vapour deposition

1991 ◽  
Vol 27 (22) ◽  
pp. 2043 ◽  
Author(s):  
S.B. Hwang ◽  
Y.K. Fang ◽  
K.H. Chen ◽  
C.R. Liu ◽  
L.C. Kuo
Keyword(s):  
Amorphous Carbon ◽  
High Voltage ◽  
Vapour Deposition ◽  
Crystalline Silicon ◽  
Heterojunction Diode

Microstructure and Tensile Property of Zn-Al Alloy Reinforced with Titanium Produced by Electrolysis

2009 ◽  
Vol 79-82 ◽  
pp. 1415-1418 ◽  
Author(s):  
Shu Qing Yan ◽  
Jing Pei Xie ◽  
Wen Yan Wang ◽  
Ji Wen Li
Keyword(s):  
Grain Size ◽  
Tensile Property ◽  
Heterogeneous Nucleation ◽  
Titanium Content ◽  
Small Dimension ◽  
Al Alloy ◽  
Exotic Particles ◽  
Titanium Aluminum ◽  
High Dispersity

In this study, some low-titanium aluminum alloys produced by electrolysis were prepared and the effect of various titanium contents on microstructure and tensile property of Zn-Al alloy was investigated. The test results showed that addition of titanium by electrolysis is an effective way to refine the grain size of Zn-Al alloy. As the titanium content is 0.04 wt%, the grain size becomes to be a minimum value and the tensile property of the alloy reaches to the maximum. Electrolysis showed that titanium atoms are to be some inherent particles in low-titanium aluminum alloy. These titanium atoms enter into the aluminum melt liquid and spread to the whole melt rapidly under stirring action of electromagnetic field of the electric current. The heterogeneous phase nuclei are high melting TiC and TiAl3 particles formed from in-situ precipitating trace C and Ti during cooling process. These in-situ precipitating heterogeneous nucleation sites with small dimension, high dispersity, cleaning interface and fine soakage with melt, have better capacity of heterogeneous nucleation than of exotic particles. It may inhibit grain growth faster and more effective in pinning dislocations, grain boundaries or sub-boundaries.

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