Crystallization of amorphous thin low pressure chemical vapour deposition silicon films: in situ TEM measurement of grain growth rates

1993 ◽  
Vol 12 (12) ◽  
pp. 910-912 ◽  
Author(s):  
J. P. Guillemet ◽  
B. de Mauduit ◽  
B. Pieraggi ◽  
E. Campo ◽  
E. Scheid
Keyword(s):  
Grain Growth ◽  
Chemical Vapour Deposition ◽  
Growth Rates ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Low Pressure ◽  
Silicon Films ◽  
In Situ Tem ◽  
Pressure Chemical

Silicon Films Deposited by Low-Pressure Chemical Vapour Deposition for Microsystems

2003 ◽  
Vol 93 ◽  
pp. 453-458 ◽  
Author(s):  
H. Mahfoz-Kotb ◽  
A.C. Salaün ◽  
T. Mohammed-Brahim ◽  
F. Bendriaa ◽  
F. Le Bihan ◽  
...  
Keyword(s):  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Low Pressure ◽  
Silicon Films ◽  
Pressure Chemical

Silicon carbide emitter diodes by LPCVD (low-pressure chemical vapour deposition) using di-tert-butylsilane

1992 ◽  
Vol 70 (10-11) ◽  
pp. 946-948
Author(s):  
S. B. Hewitt ◽  
S.-P. Tay ◽  
N. G. Tarr ◽  
A. R. Boothroyd
Keyword(s):  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Low Pressure ◽  
Silicon Substrates ◽  
Phosphorus Doping ◽  
Forward Current ◽  
Pressure Chemical ◽  
Sic Films

Stoichiometric SiC films formed by low-pressure chemical vapour deposition from a di-tert-butylsilane source with in situ phosphorus doping from tert-butylphosphine were used as emitters in heterojunction diodes fabricated on lightly doped silicon substrates. Diode characteristics are nearly ideal, with forward current dominated by injection-diffusion in the silicon substrate.

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