scholarly journals Study on mixed vanadium oxide thin film deposited by RF magnetron sputtering and its application

2011 ◽  
Vol 18 ◽  
pp. 73-76 ◽  
Author(s):  
Zhang Ling ◽  
Tu Jianhui ◽  
Feng Hao ◽  
Cui Jingzhong
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Vanadium Oxide ◽  
Rf Magnetron Sputtering ◽  
Oxide Thin Film ◽  
Vanadium Oxide Thin Film

Study on Reactive Ion Etching of Vanadium Oxide Thin Film by Taguchi Method

2014 ◽  
Vol 909 ◽  
pp. 91-94
Author(s):  
Jun Gou ◽  
Hui Ling Tai ◽  
Jun Wang ◽  
De En Gu ◽  
Xiong Bang Wei ◽  
...  
Keyword(s):  
Thin Film ◽  
Taguchi Method ◽  
Vanadium Oxide ◽  
Etch Rate ◽  
Reactive Ion Etching ◽  
Oxide Thin Film ◽  
Optimum Process ◽  
Rf Power ◽  
Ion Etching ◽  
Vanadium Oxide Thin Film

A high selectivity patterning technology of vanadium oxide (VOx) thin film was suggested in this paper. VOxthin film was etched through a photoresist (PR) mask using Cl/N based gases in a reactive ion etching (RIE) system. Taguchi method was used for process design to identify factors that influence the patterning and find optimum process parameters. Experimental results suggested that RF power was the largest contribution factor for VOxetch rate, PR selectivity and uniformity on 6 inch diameter wafer. Uniformity and PR selectivity were improved by introducing a small amount of N2. High resolution and low roughness patterning transfer was achieved with a non uniformity of 2.4 %, an VOxetch rate of 74 nm/min, a PR selectivity of 0.96, a Si3N4selectivity of 5 and a SiO2selectivity of 10.

DC Magnetron Sputtering Deposition of Room-Temperature Phase Transition Vanadium Oxide Film

2014 ◽  
Vol 1053 ◽  
pp. 332-336 ◽  
Author(s):  
Ya Qiao ◽  
Yuan Lu ◽  
Hua Yang ◽  
Yong Shun Ling
Keyword(s):  
Thin Film ◽  
Phase Transition ◽  
Magnetron Sputtering ◽  
Vanadium Oxide ◽  
Room Temperature ◽  
Annealed Film ◽  
Oxide Thin Film ◽  
Temperature Phase ◽  
Dc Magnetron Sputtering ◽  
Main Component

Low valence vanadium oxide thin film was deposited on ordinary glass substrates by direct current (DC) magnetron sputtering from a vanadium metal target. And then it was annealed in an atmosphere of oxygen/argon mixture at the temperature of 450°C for 2hours to obtain VO2thin film possessing the ability of phase transition. The XRD patterns and resistance-temperature (R-T) curves of the film before and after the annealing were given. The results show that: the as-deposited film, whose main component is V2O3, presents no phase transition and its resistance changes from 1.26 kΩ~1.01kΩ while its temperature rising from room temperature to 80°C; the annealed film, whose main component is VO2, presents a phase transition when its temperature rising from room temperature to 80°C and its resistance changes from 10kΩ to 60Ω, more than two orders. And the phase transition temperature of the film deposited is only 30°C.

On growth of epitaxial vanadium oxide thin film on sapphire (0001)

2010 ◽  
Vol 25 (3) ◽  
pp. 422-426 ◽  
Author(s):  
Tsung-Han Yang ◽  
Chunming Jin ◽  
Ravi Aggarwal ◽  
R.J. Narayan ◽  
Jay Narayan
Keyword(s):  
Thin Film ◽  
Vanadium Oxide ◽  
Epitaxial Growth ◽  
Thermal Hysteresis ◽  
Large Angle ◽  
Film Plane ◽  
Oxide Thin Film ◽  
Resistance Change ◽  
Transmission Electron ◽  
Vanadium Oxide Thin Film

We report the characteristics of epitaxial growth and properties of vanadium oxide (VO2) thin films on sapphire (0001) substrates. Pulsed laser deposition was used to grow (002) oriented VO2 films on sapphire (0001). Transmission electron microscopy studies showed that the orientation relationship between the substrate and the thin film is: (002)f2∥(0006)sub3 and [010]f2 ∥sub. It was also established that VO2 has three different orientations in the film plane which are rotated by 60° from each other. The epitaxial growth of vanadium oxide on sapphire (0001) has been explained in the framework of domain matching epitaxy (DME). Electrical resistivity measurements as a function of temperature showed a sharp transition with a hysteresis width ˜5 °C, and large resistance change (˜1.5 × 104) from the semiconductor phase to the metal phase. It is interesting to note that in spite of large angle twin boundaries in these VO2 films, the SMT characteristics are better than those observed for polycrystalline films. The higher width of thermal hysteresis for the VO2 film on c-sapphire compared to a bulk single VO2 crystal and a single-crystal VO2 film on r-sapphire can be attributed to the existence of these large-angle twin grain boundaries. These findings can provide insight into the phase transformation characteristics of VO2, which has important applications in switching and memory devices.

Synthesis and electrical characterisation of vanadium oxide thin film thermometer for microbolometer applications

2016 ◽  
Vol 52 (10) ◽  
pp. 827-828 ◽  
Author(s):  
M.F. Zia ◽  
M. Abdel‐Rahman ◽  
M. Alduraibi ◽  
B. Ilahi ◽  
A. Alasaad
Keyword(s):  
Thin Film ◽  
Vanadium Oxide ◽  
Oxide Thin Film ◽  
Vanadium Oxide Thin Film

Optical band engineering of metal-oxynitride based on tantalum oxide thin film fabricated via reactive gas-timing RF magnetron sputtering

2016 ◽  
Vol 306 ◽  
pp. 346-350 ◽  
Author(s):  
N. Khemasiri ◽  
S. Jessadaluk ◽  
C. Chananonnawathorn ◽  
S. Vuttivong ◽  
T. Lertvanithphol ◽  
...  
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Tantalum Oxide ◽  
Rf Magnetron Sputtering ◽  
Oxide Thin Film ◽  
Band Engineering ◽  
Reactive Gas

Development of a highly transparent, low-resistance lithium-doped nickel oxide triple-layer film deposited by magnetron sputtering

2017 ◽  
Vol 53 (10) ◽  
pp. 1634-1637 ◽  
Author(s):  
Chia-Ching Wu ◽  
Wei-Chen Shih
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Nickel Oxide ◽  
Transparent Conductive Oxide ◽  
Rf Magnetron Sputtering ◽  
Oxide Thin Film ◽  
Glass Substrates ◽  
Triple Layer ◽  
Conductive Oxide

This research presents a triple-layer transparent conductive oxide thin film, with a lithium-doped nickel oxide/silver/lithium-doped nickel oxide (L-NiO/Ag/L-NiO) structure using radio-frequency (RF) magnetron sputtering on glass substrates.

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