Passivation of surface states by ALD-grown TiO2 overlayers on Ta3N5 anodes for photoelectrochemical water oxidation

2016 ◽  
Vol 52 (57) ◽  
pp. 8806-8809 ◽  
Author(s):  
Peng Zhang ◽  
Tuo Wang ◽  
Jinlong Gong
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Water Oxidation ◽  
Surface States ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Photoelectrochemical Water Oxidation

This paper describes the fabrication of TiO2 overlayers by atomic layer deposition to passivate the surface states on Ta3N5 thin film anodes for photoelectrochemical water oxidation.

scholarly journals Correction: Enhanced photoelectrochemical water oxidation via atomic layer deposition of TiO2on fluorine-doped tin oxide nanoparticle films

Nanoscale ◽  
2015 ◽  
Vol 7 (28) ◽  
pp. 12226-12226 ◽  
Author(s):  
Isvar A. Cordova ◽  
Qing Peng ◽  
Isa L. Ferrall ◽  
Adam J. Rieth ◽  
Paul G. Hoertz ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Tin Oxide ◽  
Water Oxidation ◽  
Atomic Layer ◽  
Nanoparticle Films ◽  
Layer Deposition ◽  
Oxide Nanoparticle ◽  
Photoelectrochemical Water Oxidation

Conformal SnOx heterojunction coatings for stabilized photoelectrochemical water oxidation using arrays of silicon microcones

2020 ◽  
Vol 8 (18) ◽  
pp. 9292-9301
Author(s):  
Ivan A. Moreno-Hernandez ◽  
Sisir Yalamanchili ◽  
Harold J. Fu ◽  
Harry A. Atwater ◽  
Bruce S. Brunschwig ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Oxide Layer ◽  
Tin Oxide ◽  
Water Oxidation ◽  
Surface Recombination ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Photoelectrochemical Water Oxidation

A protective tin oxide layer formed by atomic-layer deposition limits surface recombination at n-Si surfaces and produces ∼620 mV of photovoltage on planar n-Si photoanodes. The layer conformally coats structures such as Si microcone arrays.

Enhanced photoelectrochemical water oxidation via atomic layer deposition of TiO2 on fluorine-doped tin oxide nanoparticle films

Nanoscale ◽  
2015 ◽  
Vol 7 (18) ◽  
pp. 8584-8592 ◽  
Author(s):  
Isvar A. Cordova ◽  
Qing Peng ◽  
Isa L. Ferrall ◽  
Adam J. Rieth ◽  
Paul G. Hoertz ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Tin Oxide ◽  
Water Oxidation ◽  
Atomic Layer ◽  
Solution Processing ◽  
Nanoparticle Films ◽  
Layer Deposition ◽  
Oxide Nanoparticle ◽  
Conversion Efficiencies ◽  
Photoelectrochemical Water Oxidation

In this study, nanostructured photoanodes with heightened photoelectrochemical conversion efficiencies were synthesized by atomic layer deposition (ALD) of TiO2 onto a fluorine-doped tin oxide nanoparticle (nanoFTO) scaffold fabricated by solution processing.

Atomic Layer Deposition of Chalcogenides for Next-Generation Phase Change Memory

2021 ◽  
Author(s):  
Yoon Kyeung Lee ◽  
Chanyoung Yoo ◽  
Woohyun Kim ◽  
Jeongwoo Jeon ◽  
Cheol Seong Hwang
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Film Growth ◽  
Phase Change Memory ◽  
Film Surface ◽  
Atomic Layer ◽  
Thin Film Growth ◽  
Growth Technique ◽  
Layer Deposition ◽  
Change Memory

Atomic layer deposition (ALD) is a thin film growth technique that uses self-limiting, sequential reactions localized at the growing film surface. It guarantees exceptional conformality on high-aspect-ratio structures and controllability...

Chemical resistance of thin film materials based on metal oxides grown by atomic layer deposition

2013 ◽  
Vol 542 ◽  
pp. 219-224 ◽  
Author(s):  
Väino Sammelselg ◽  
Ivan Netšipailo ◽  
Aleks Aidla ◽  
Aivar Tarre ◽  
Lauri Aarik ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Metal Oxides ◽  
Chemical Resistance ◽  
Atomic Layer ◽  
Layer Deposition
Sign in / Sign up

Export Citation Format

Share Document