Low operating voltage ambipolar graphene oxide-floating-gate memory devices based on quantum dots

2016 ◽  
Vol 4 (7) ◽  
pp. 1420-1424 ◽  
Author(s):  
Yongli Che ◽  
Yating Zhang ◽  
Xiaolong Cao ◽  
Xiaoxian Song ◽  
Mingxuan Cao ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Graphene Oxide ◽  
Nonvolatile Memory ◽  
Floating Gate ◽  
Operating Voltage ◽  
Memory Devices ◽  
Storage Element ◽  
Floating Gate Memory ◽  
Nonvolatile Memory Devices ◽  
A Charge

Solution processed quantum dots (QDs) were employed as semiconductor layers in low operating voltage nonvolatile memory devices where graphene oxide (GO) is embedded as a charge storage element.

CARBON NANOTUBE BASED NONVOLATILE MEMORY DEVICES

2006 ◽  
Vol 16 (04) ◽  
pp. 959-975 ◽  
Author(s):  
YUEGANG ZHANG
Keyword(s):  
Carbon Nanotube ◽  
Flash Memory ◽  
Nonvolatile Memory ◽  
Memory Performance ◽  
Memory Device ◽  
Floating Gate ◽  
Memory Devices ◽  
Memory Cells ◽  
Nonvolatile Memory Devices ◽  
Electrostatic Coupling

The technology progress and increasing high density demand have driven the nonvolatile memory devices into nanometer scale region. There is an urgent need of new materials to address the high programming voltage and current leakage problems in the current flash memory devices. As one of the most important nanomaterials with excellent mechanical and electronic properties, carbon nanotube has been explored for various nonvolatile memory applications. While earlier proposals of "bucky shuttle" memories and nanoelectromechanical memories remain as concepts due to fabrication difficulty, recent studies have experimentally demonstrated various prototypes of nonvolatile memory cells based on nanotube field-effect-transistor and discrete charge storage bits, which include nano-floating gate memory cells using metal nanocrystals, oxide-nitride-oxide memory stack, and more simpler trap-in-oxide memory devices. Despite of the very limited research results, distinct advantages of high charging efficiency at low operation voltage has been demonstrated. Single-electron charging effect has been observed in the nanotube memory device with quantum dot floating gates. The good memory performance even with primitive memory cells is attributed to the excellent electrostatic coupling of the unique one-dimensional nanotube channel with the floating gate and the control gate, which gives extraordinary charge sensibility and high current injection efficiency. Further improvement is expected on the retention time at room temperature and programming speed if the most advanced fabrication technology were used to make the nanotube based memory cells.

GaAs metal-oxide-semiconductor based nonvolatile memory devices embedded with ZnO quantum dots

2013 ◽  
Vol 114 (8) ◽  
pp. 084509 ◽  
Author(s):  
Souvik Kundu ◽  
Sankara Rao Gollu ◽  
Ramakant Sharma ◽  
Nripendra. N Halder ◽  
Pranab Biswas ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Metal Oxide ◽  
Nonvolatile Memory ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Memory Devices ◽  
Nonvolatile Memory Devices ◽  
Zno Quantum Dots

BODIPY-based conjugated polymer covalently grafted reduced graphene oxide for flexible nonvolatile memory devices

Carbon ◽  
2017 ◽  
Vol 116 ◽  
pp. 713-721 ◽  
Author(s):  
Sai Sun ◽  
Xiaodong Zhuang ◽  
Luxin Wang ◽  
Bo Liu ◽  
Bin Zhang ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Reduced Graphene Oxide ◽  
Conjugated Polymer ◽  
Nonvolatile Memory ◽  
Memory Devices ◽  
Reduced Graphene ◽  
Nonvolatile Memory Devices
Sign in / Sign up

Export Citation Format

Share Document