From partial to complete optical erasure of azobenzene–polymer gratings: effect of molecular weight

2015 ◽  
Vol 3 (42) ◽  
pp. 11011-11016 ◽  
Author(s):  
Jaana Vapaavuori ◽  
Robin H. A. Ras ◽  
Matti Kaivola ◽  
C. Geraldine Bazuin ◽  
Arri Priimagi
Keyword(s):  
Modulation Depth ◽  
Complex Surface ◽  
Ambient Conditions ◽  
Azobenzene Polymer ◽  
High Modulation ◽  
All Optical ◽  
Surface Patterns ◽  
Spatially Varying ◽  
Polymer Gratings ◽  
Grating Vector

We demonstrate complete all-optical erasure of high-modulation-depth azopolymer surface patterns at ambient conditions. Applying selective optical erasure and rewriting can be translated into complex surface patterns with spatially varying grating vector directions.

Spin centers in SiC for all-optical nanoscale quantum sensing under ambient conditions

JETP Letters ◽  
2016 ◽  
Vol 104 (2) ◽  
pp. 82-87 ◽  
Author(s):  
A. N. Anisimov ◽  
R. A. Babunts ◽  
S. V. Kidalov ◽  
E. N. Mokhov ◽  
V. A. Soltamov ◽  
...  
Keyword(s):  
Ambient Conditions ◽  
All Optical ◽  
Quantum Sensing

scholarly journals Neural Rate and Timing Cues for Detection and Discrimination of Amplitude-Modulated Tones in the Awake Rabbit Inferior Colliculus

2007 ◽  
Vol 97 (1) ◽  
pp. 522-539 ◽  
Author(s):  
Paul C. Nelson ◽  
Laurel H. Carney
Keyword(s):  
Inferior Colliculus ◽  
Dynamic Range ◽  
Modulation Depth ◽  
Average Rate ◽  
Modulation Frequency ◽  
Detection Threshold ◽  
Depth Functions ◽  
Depth Discrimination ◽  
High Modulation ◽  
Envelope Processing

Neural responses to amplitude-modulated (AM) tones in the unanesthetized rabbit inferior colliculus (IC) were studied in an effort to establish explicit relationships between physiological and psychophysical measures of temporal envelope processing. Specifically, responses to variations in modulation depth ( m) at the cell’s best modulation frequency, with and without modulation maskers, were quantified in terms of average rate and synchronization to the envelope over the entire perceptual dynamic range of depths. Statistically significant variations in the metrics were used to define neural AM detection and discrimination thresholds. Synchrony emerged at modulation depths comparable with psychophysical AM detection sensitivities in some neurons, whereas the lowest rate-based neural thresholds could not account for psychoacoustical thresholds. The majority of rate thresholds (85%) were −10 dB or higher (in 20 log m), and 16% of the population exhibited no systematic dependence of average rate on m. Neural thresholds for AM detection did not decrease systematically at higher SPLs (as observed psychophysically): thresholds remained constant or increased with level for most cells tested at multiple sound-pressure levels (SPLs). At depths higher than the rate-based detection threshold, some rate modulation-depth functions were sufficiently steep with respect to the across-trial variability of the rate to predict depth discrimination thresholds as low as 1 dB (comparable with the psychophysics). Synchrony, on the other hand, did not vary systematically with m in many cells at high modulation depths. A simple computational model was extended to reproduce several features of the modulation frequency and depth dependence of both transient and sustained pure-tone responders.

scholarly journals Design of an On-Chip Plasmonic Modulator Based on Hybrid Orthogonal Junctions Using Vanadium Dioxide

Nanomaterials ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 2507
Author(s):  
Gregory Beti Tanyi ◽  
Miao Sun ◽  
Christina Lim ◽  
Ranjith Rajasekharan Unnithan
Keyword(s):  
Vanadium Dioxide ◽  
Modulation Depth ◽  
Large Change ◽  
Silicon On Insulator ◽  
Nanometer Scale ◽  
High Modulation ◽  
Orthogonal Geometry ◽  
Potential Applications ◽  
On Chip ◽  
Insertion Losses

We present the design of a plasmonic modulator based on hybrid orthogonal silver junctions using vanadium dioxide as the modulating material on a silicon-on-insulator. The modulator has an ultra-compact footprint of 1.8 μm × 1 μm with a 100 nm × 100 nm modulating section based on the hybrid orthogonal geometry. The modulator takes advantage of the large change in the refractive index of vanadium dioxide during its phase transition to achieve a high modulation depth of 46.89 dB/μm. The simulated device has potential applications in the development of next generation high frequency photonic modulators for optical communications which require nanometer scale footprints, large modulation depth and small insertion losses.

scholarly journals An Optically Tunable THz Modulator Based on Nanostructures of Silicon Substrates

Sensors ◽  
2020 ◽  
Vol 20 (8) ◽  
pp. 2198
Author(s):  
Chen Mo ◽  
Jingbo Liu ◽  
Dongshan Wei ◽  
Honglei Wu ◽  
Qiye Wen ◽  
...  
Keyword(s):  
Modulation Depth ◽  
Silicon Nanostructures ◽  
Silicon Substrates ◽  
Pumping Power ◽  
Layer Model ◽  
Strong Light ◽  
Graded Index ◽  
Light Reflectance ◽  
All Optical ◽  
532 Nm

Nanostructures can induce light multireflection, enabling strong light absorption and efficient photocarrier generation. In this work, silicon nanostructures, including nanocylinders, nanotips, and nanoholes, were proposed as all-optical broadband THz modulators. The modulation properties of these modulators were simulated and compared with finite element method calculations. It is interesting to note that the light reflectance values from all nanostructure were greatly suppressed, showing values of 26.22%, 21.04%, and 0.63% for nanocylinder, nanohole, and nanotip structures, respectively, at 2 THz. The calculated results show that under 808 nm illumination light, the best modulation performance is achieved in the nanotip modulator, which displays a modulation depth of 91.63% with a pumping power of 60 mW/mm2 at 2 THz. However, under shorter illumination wavelengths, such as 532 nm, the modulation performance for all modulators deteriorates and the best performance is found with the nanohole-based modulator rather than the nanotip-based one. To further clarify the effects of the nanostructure and wavelength on the THz modulation, a graded index layer model was established and the simulation results were explained. This work may provide a further theoretical guide for the design of optically tunable broadband THz modulators.

Photo-induced high modulation depth terahertz modulator based on VO x –Si–VO x hybrid structure

2019 ◽  
Vol 52 (17) ◽  
pp. 175103 ◽  
Author(s):  
Fangrong Hu ◽  
Hong Wang ◽  
Tong Li ◽  
Xiaowen Zhang ◽  
Weiming Wang ◽  
...  
Keyword(s):  
Modulation Depth ◽  
Hybrid Structure ◽  
High Modulation

High‐modulation depth modulator based on double‐layer graphene with a low bias voltage

2019 ◽  
Vol 14 (5) ◽  
pp. 515-519 ◽  
Author(s):  
Zhou Dapeng ◽  
Xiao Binggang ◽  
Xiao Lihua ◽  
Guo Fenglei ◽  
Wang Xiumin
Keyword(s):  
Double Layer ◽  
Bias Voltage ◽  
Modulation Depth ◽  
Layer Graphene ◽  
High Modulation

scholarly journals Broadband and high modulation-depth THz modulator using low bias controlled VO_2-integrated metasurface

2017 ◽  
Vol 25 (15) ◽  
pp. 17322 ◽  
Author(s):  
Gaochao Zhou ◽  
Penghui Dai ◽  
Jingbo Wu ◽  
Biaobing Jin ◽  
Qiye Wen ◽  
...  
Keyword(s):  
Modulation Depth ◽  
High Modulation ◽  
Thz Modulator
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