Sequence-dependent mechanical, photophysical and electrical properties of pi-conjugated peptide hydrogelators

2015 ◽  
Vol 3 (25) ◽  
pp. 6505-6514 ◽  
Author(s):  
Herdeline Ann M. Ardoña ◽  
Kalpana Besar ◽  
Matteo Togninalli ◽  
Howard E. Katz ◽  
John D. Tovar
Keyword(s):  
Electrical Properties ◽  
Systematic Variation ◽  
Peptide Sequence ◽  
Bulk Properties ◽  
Pi Conjugated ◽  
Sequence Dependent ◽  
1D Nanostructure

An investigation of how systematic variation of peptide sequence influences the nanoscale and bulk properties of 1D-nanostructure forming peptide–π–peptide hydrogelators is reported herein.

How Small Is Too Small ? Understanding The Electronic Structure Of Atomic-Scale Transistors

1999 ◽  
Vol 5 (S2) ◽  
pp. 120-121
Author(s):  
D. A. Muller ◽  
T. Sorsch ◽  
S. Moccio ◽  
F. H. Baumann ◽  
K. Evans-Lutterodt ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Electrical Properties ◽  
Thermal Oxidation ◽  
Electronic Devices ◽  
Local Environment ◽  
Gate Oxide ◽  
Atomic Scale ◽  
Gate Oxides ◽  
Bulk Properties ◽  
Commercial Use

The transistors planned for commercial use ten years from now in many electronic devices will have gate lengths shorter than 130 atoms, gate oxides thinner than 1.2 nm of SiO2 and clock speeds in excess of 10 GHz. It is now technologically possible to produce such transistors with gate oxides only 5 silicon atoms thick[l]. Since at least two of those 5 atoms are not in a local environment similar to either bulk Si or bulk SiO2, the properties of the interface are responsible for a significant fraction of the “bulk” properties of the gate oxide. However the physical (and especially their electrical) properties of the interfacial atoms are very different from .bulk Si or bulk SiO2. Further, roughness on an atomic scale can alter the leakage current by orders of magnitude.In our studies of such devices, we found that thermal oxidation tends to produce Si/SiO2 interfaces with 0.1-0.2 nm rms roughness.

The Influence of Ion Beam Implantation on Electrical Properties of Polycrystalline MnNiCuFeO

1992 ◽  
Vol 279 ◽  
Author(s):  
Li Binbin ◽  
Tan Hui ◽  
Han Ying ◽  
Tao Wei ◽  
Lin Chenglu
Keyword(s):  
Electrical Properties ◽  
Grain Boundaries ◽  
Boundary Effect ◽  
Ion Beam ◽  
Low Frequency ◽  
Bulk Properties ◽  
Spreading Resistance ◽  
Impedance Analyzer ◽  
Ion Beam Implantation ◽  
Grain Boundary Effect

ABSTRACTPolycrystalline MnNiCuFeO was implanted by B+, P+ and Si+ ion beams and thermally annealed. The structure and electrical properties of the sample were measured using SEM, Microprobe (MP), Low Frequency Impedance Analyzer (LFIA) and Spreading Resistance Probe (SRP). The results show that the resistance of grain boundaries is much higher than that of grains. The spreading resistance of the implanted samples is lower by factor of 2 than that of the unimplanted ones. The ratio of the real part Rs (grain effect) to imaginary part Xs (grain boundary effect) decreases with ion beam implantation. From these results, we came to the conclusion that the behavior of the grain boundaries is important to the bulk properties of polycrystalline MnNiCuFeO.

Scale invariance of the low‐frequency electrical properties of inhomogeneous materials

Geophysics ◽  
1981 ◽  
Vol 46 (7) ◽  
pp. 1057-1059 ◽  
Author(s):  
Morrel H. Cohen
Keyword(s):  
Dielectric Constant ◽  
Electrical Properties ◽  
Scale Invariance ◽  
Low Frequency ◽  
Inhomogeneous Material ◽  
Inhomogeneous Materials ◽  
Low Frequencies ◽  
Bulk Properties ◽  
Grain Sizes

We show that the electrical properties of an inhomogeneous material are invariant to the scale of the inhomogeneity at low frequencies when they are determined solely from local bulk properties, Thus the pore and grain sizes of rocks cannot be ascertained by low‐frequency conductivity and dielectric constant measurements.

scholarly journals Peptide Sequence-Dependent Gene Expression of PEGylated Peptide/DNA Complexes

2019 ◽  
Vol 16 (7) ◽  
pp. 3072-3082
Author(s):  
Mikiko Ueno ◽  
Satoshi Yamauchi ◽  
Daiki Kumekawa ◽  
Yuichi Yamasaki
Keyword(s):  
Gene Expression ◽  
Peptide Sequence ◽  
Dna Complexes ◽  
Sequence Dependent
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