scholarly journals Tin perovskite/fullerene planar layer photovoltaics: improving the efficiency and stability of lead-free devices

2015 ◽  
Vol 3 (21) ◽  
pp. 11631-11640 ◽  
Author(s):  
Kenneth P. Marshall ◽  
Richard I. Walton ◽  
Ross A. Hatton
Keyword(s):  
Room Temperature ◽  
Open Circuit Voltage ◽  
Light Harvesting ◽  
Open Circuit ◽  
Lead Free ◽  
Planar Layer ◽  
Photovoltaic Devices ◽  
Device Stability ◽  
New Strategy ◽  
Defect Densities

The preparation of CsSnI3 films at room temperature with defect densities low enough for light harvesting in photovoltaic devices is reported, along with a new strategy for improving device stability and evidence that the energetics at the perovskite/fullerene interface is a key determinant of the open-circuit voltage.

Narrow-bandgap photovoltaic devices operating at room temperature and above with high open-circuit voltage

2013 ◽  
Vol 102 (21) ◽  
pp. 211103 ◽  
Author(s):  
Hossein Lotfi ◽  
Robert T. Hinkey ◽  
Lu Li ◽  
Rui Q. Yang ◽  
John F. Klem ◽  
...  
Keyword(s):  
Room Temperature ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Photovoltaic Devices ◽  
Narrow Bandgap

scholarly journals Spray‐coated lead‐free Cs 2 AgBiBr 6 double perovskite solar cells with high open‐circuit voltage

Solar RRL ◽  
2021 ◽  
Author(s):  
Nathan Daem ◽  
Jennifer Dewalque ◽  
Felix Lang ◽  
Anthony Maho ◽  
Gilles Spronck ◽  
...  
Keyword(s):  
Solar Cells ◽  
Open Circuit Voltage ◽  
Perovskite Solar Cells ◽  
Double Perovskite ◽  
Open Circuit ◽  
Lead Free

scholarly journals Junction Configuration Effects on the Photovoltaic Parameters of a-Si/CZTS Solar Cells

2022 ◽  
Author(s):  
H. Bitam ◽  
B. Hadjoudja ◽  
Beddiaf Zaidi ◽  
C. Shakher ◽  
S. Gagui ◽  
...  
Keyword(s):  
Renewable Energy ◽  
Solar Cells ◽  
Solar Cell ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Photovoltaic Devices ◽  
Solar Cell Efficiency ◽  
Cell Efficiency ◽  
Reported Study ◽  
Stated Problem

Due to increased energy intensive human activities resulting accelerated demand for electric power coupled with occurrence of natural disasters with increased frequency, intensity, and duration, it becomes essential to explore and advance renewable energy technology for sustainability of the society. Addressing the stated problem and providing a radical solution has been attempted in this study. To harvest the renewable energy, among variety of solar cells reported, a composite a-Si/CZTS photovoltaic devices has not yet been investigated. The calculated parameters for solar cell based on the new array of layers consisting of a-Si/CZTS are reported in this study. The variation of i) solar cell efficiency as a function of CZTS layer thickness, temperature, acceptor, and donor defect concentration; ii) variation of the open circuit current density as a function of temperature, open circuit voltage; iii) variation of open circuit voltage as a function of the thickness of the CZTS layer has been determined. There has been no reported study on a-Si/CZTS configuration-based solar cell, analysis of the parameters, and study to address the challenges imped efficiency of the photovoltaic device and the same has been discussed in this work. The value of the SnO2/a-Si/CZTS solar cells obtained from the simulation is 23.9 %.

A Novel InSb Photodiode Infrared Sensor Operating at Room Temperature

2005 ◽  
Vol 891 ◽  
Author(s):  
Koichiro Ueno ◽  
Edson Gomes Camargo ◽  
Yoshifumi Kawakami ◽  
Yoshitaka Moriyasu ◽  
Kazuhiro Nagase ◽  
...  
Keyword(s):  
Room Temperature ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Consumer Electronics ◽  
Electronic Equipment ◽  
Personal Computers ◽  
Infrared Sensor ◽  
Output Noise ◽  
In Series ◽  
Photovoltaic Mode

ABSTRACTA microchip-sized InSb photodiode based infrared sensor (InSb PDS) that operates at room temperature was developed. The InSb PDS consists of 700 photodiodes connected in series and consumes no power, because it works in photovoltaic mode to output an open-circuit voltage. The InSb PDS has a typical responsivity of 1,900 V/W and an output noise of 0.15 μV/Hz1/2. A detectivity of 2.8×108 cmHz1/2/W was obtained at 300 K. The InSb PDS has performance high enough for applications such as mobile electronic equipment, personal computers, and consumer electronics

Carbazole-based small molecules for vacuum-deposited organic photovoltaic devices with open-circuit voltage exceeding 1 V

2017 ◽  
Vol 47 ◽  
pp. 162-173 ◽  
Author(s):  
Yuan Jay Chang ◽  
Jung-Lien Hsu ◽  
Yi-Hua Li ◽  
Sajal Biring ◽  
Tzu-Hung Yeh ◽  
...  
Keyword(s):  
Small Molecules ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Organic Photovoltaic ◽  
Photovoltaic Devices ◽  
Organic Photovoltaic Devices

Fabrication of protonic ceramic fuel cells via infiltration with Ni nanoparticles: A new strategy to suppress NiO diffusion & increase open circuit voltage

2020 ◽  
Vol 345 ◽  
pp. 115189 ◽  
Author(s):  
Donglin Han ◽  
Akiko Kuramitsu ◽  
Takayuki Onishi ◽  
Yohei Noda ◽  
Masatoshi Majima ◽  
...  
Keyword(s):  
Fuel Cells ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Ni Nanoparticles ◽  
New Strategy ◽  
Ceramic Fuel ◽  
Ceramic Fuel Cells

Chalcogenide Glass Thin Films for Nanodipole Junctionless Photovoltaics

2011 ◽  
Vol 1322 ◽  
Author(s):  
Sakina Junaghadwala ◽  
Daniel G. Georgiev ◽  
Victor G. Karpov ◽  
Rossen Todorov ◽  
Nanke Jiang
Keyword(s):  
Thin Films ◽  
Chalcogenide Glass ◽  
Open Circuit Voltage ◽  
High Vacuum ◽  
Practical Interest ◽  
Open Circuit ◽  
Photovoltaic Devices ◽  
Scanning Calorimetry ◽  
New Type ◽  
Initial Results

ABSTRACTWe examine the potential of Bi-Ge-Se chalcogenide glass films as materials for a new type of photovoltaic devices, referred to as junctionless nanodipole PV. Glasses of a chemical composition providing a significant optical absorption were synthesized in quartz ampoules from high-purity Bi, Ge, and Se elements by a conventional melt quenching technique. This material was then used to deposit thin films with different thicknesses on various substrates by thermal evaporation under high-vacuum conditions. The original bulk glasses and the films were characterized by electron microscopy with EDS, XRD, Raman spectroscopy, differential scanning calorimetry, and spectrophotometry. Open-circuit voltage (Voc) readings under incandescent illumination were obtained from the as-deposited and annealed films. Results from this characterization work are presented and discussed. Although the efficiency of nanodipole PV material structures, based on this material remains of no practical interest, our initial results indicate a possible path for the implementation of the nanodipole PV concept.

Efficient Cu(In, Ga)Se2 Based Solar Cells Prepared by Electrodeposition

2003 ◽  
Vol 763 ◽  
Author(s):  
D. Guimard ◽  
N. Bodereau ◽  
J. Kurdi ◽  
J.F. Guillemoles ◽  
D. Lincot ◽  
...  
Keyword(s):  
Band Gap ◽  
Room Temperature ◽  
Open Circuit Voltage ◽  
Spectral Response ◽  
Deposition Process ◽  
Open Circuit ◽  
Response Analysis ◽  
Cell Parameters ◽  
Current Voltage ◽  
Capacitance Voltage

AbstractCuInSe2 and Cu(In, Ga)Se2 precursor layers have been prepared by electrodeposition, with morphologies suitable for device completion. These precursor films were transformed into photovoltaic quality films after thermal annealing without any post-additional vacuum deposition process. Depending on the preparation parameters annealed films with different band gaps between 1eV and 1.5 eV have been prepared. The dependence of resulting solar cell parameters has been investigated. The best efficiency achieved is about 10,2 % for a band gap of 1.45 eV. This device presents an open circuit voltage value of 740 mV, in agreement with the higher band gap value. Device characterisations (current-voltage, capacitance-voltage and spectral response analysis) have been performed. Admittance spectroscopy at room temperature indicates the presence of two acceptor traps at 0.3 and 0.43 eV from the valance band with density of the order of 2. 1017 cm-3 eV-1.

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