Scalable one-step synthesis of TiO2/WO3 films on titanium plates with an efficient electron storage ability

2015 ◽  
Vol 3 (19) ◽  
pp. 10195-10198 ◽  
Author(s):  
Mingce Long ◽  
Beihui Tan ◽  
Peidong Hu ◽  
Baoxue Zhou ◽  
Yongfeng Zhou
Keyword(s):  
Acid Solution ◽  
Electron Storage ◽  
Peroxotungstic Acid ◽  
One Step ◽  
Storage Ability

This study describes a new scalable method to prepare TiO2/WO3 film electrodes with an efficient electron storage ability through one-step oxidation of Ti plates in a mixture of H2O2 and peroxotungstic acid solution.

Facile preparation of nickel hydroxide nanoplates on nickel foam for high performance hydrogen generation

2020 ◽  
Vol 4 (10) ◽  
pp. 5031-5035
Author(s):  
Jun Cao ◽  
Zejie Zhang ◽  
Haichao Li ◽  
Ruitong Zhu ◽  
Songbo Li ◽  
...  
Keyword(s):  
Nitric Acid ◽  
Acid Solution ◽  
Nitric Acid Solution ◽  
Nickel Hydroxide ◽  
High Performance ◽  
Hydrogen Generation ◽  
Nickel Foam ◽  
Water Bath ◽  
One Step ◽  
Facile Preparation

This communication reports nickel hydroxide nanoplates grown on nickel foam (NF) by one-step water bath treatment of NF in nitric acid solution.

Selective one-step Chemical Etching of the Silicon Nitride/Silicon PBL stack for 0.5μm device Fabrication

1995 ◽  
Vol 386 ◽  
Author(s):  
David Ziger ◽  
Susan Vitkavage ◽  
Charles Oberdorfer ◽  
Juli Eisenberg ◽  
Michael Hughes
Keyword(s):  
Nitric Acid ◽  
Silicon Nitride ◽  
Acid Solution ◽  
Nitric Acid Solution ◽  
Device Fabrication ◽  
Reaction Products ◽  
One Step ◽  
Wet Chemical ◽  
Etch Rates

ABSTRACTAbstract Wet chemical removal of a silicon nitride/silicon Poly Buffer LOCUS (PBL) film stack with a phosphoric/nitric acid solution was characterized. Though silicon nitride etch rates remain constant, silicon etch rates decrease as a function of loading which severely limits the usable lifetime of the bath. This is caused by buildup of etching products which limits the amount of silicon that can be dissolved in the solution. Addition of HF to the phosphoric/nitric acid solution enhances the dissolution chemistry presumably by decomposing the silica reaction products and shifting the equilibrium. Characterization of this process was done to determine whether it could be applied towards PBL removal. Depending on the relative amounts of HF and HNO3 added, silicon etch rates could be enhanced by two orders of magnitude (200–400A/min) and silicon nitride etch rates by a factor of two. Selectivities for etching silicon to oxide and silicon nitride to oxide were typically between 8–12:1 and 8–20:1 respectively.

Extended Preservation of Iron for Transmission

1967 ◽  
Vol 25 ◽  
pp. 354-355
Author(s):  
E. P. Abrahamson II ◽  
M. W. Dumais
Keyword(s):  
Acid Solution ◽  
Perchloric Acid ◽  
Microscopy Study ◽  
Perchloric Acid Solution ◽  
Transmission Microscopy ◽  
Iron Base ◽  
Cold Stage

In a transmission microscopy study of iron and dilute iron base alloys, it was determined that it is possible to preserve specimens for extended periods of time. Our specimens were prepunched from 5 to 8 mil sheet to microscope size and annealed for several hours at 700°C. They were then thinned in a glacial acetic-12 percent perchloric acid solution using 10 volts and 20 milliamperes, at a temperature of 8 to 14°C.It was noted that by the use of a cold stage, the same specimen can be observed for periods up to one week without excess contamination. When removal of the specimen from the column becomes necessary, it was observed that a specimen may be kept for later observation in 1,2 dichloroethene or methanol for periods in excess of two weeks.

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