High performance H2 evolution realized in 20 μm-thin silicon nanostructured photocathodes

2015 ◽  
Vol 3 (18) ◽  
pp. 9456-9460 ◽  
Author(s):  
Jin-Young Jung ◽  
Min-Joon Park ◽  
Xiaopeng Li ◽  
Jong-Ho Kim ◽  
Ralf B. Wehrspohn ◽  
...  

Pt nanoparticles (NPs) are coated on the tapered nanoholes (NHs) integrated using a 20 μm-thin Si wafer. This photocathode significantly improves H2 production via efficient light absorption and suppression of surface recombination for obtaining a high photocurrent value of 23 mA cm−2 at 0 V vs. RHE.

Nano Energy ◽  
2019 ◽  
Vol 59 ◽  
pp. 129-137 ◽  
Author(s):  
Zhao Wang ◽  
Qi Yang ◽  
Wenlin Liu ◽  
Hao Ran ◽  
Cuiling Zhang ◽  
...  

Author(s):  
Qian-Yu Wang ◽  
Zheng-Min Zhang ◽  
Lin Liu ◽  
Lu Bai ◽  
Rui-Ying Bao ◽  
...  

Poly(L-lactide) (PLA)/TiO2/Pt composite fiber membrane with internal porous channel structure is fabricated by skillfully tuning the breath figure mechanism and vapor induced phase separation mechanism with solute and solvent matching...


2014 ◽  
Vol 50 (68) ◽  
pp. 9653-9656 ◽  
Author(s):  
Nhat Truong Nguyen ◽  
JeongEun Yoo ◽  
Marco Altomare ◽  
Patrik Schmuki

In the present work we introduce a technique to form a photocatalyst based on minimal amounts of Pt nanoparticles suspended over the mouth of anodic TiO2 nanotubes.


2013 ◽  
Vol 117 (27) ◽  
pp. 13770-13775 ◽  
Author(s):  
Zhen Qiu ◽  
Hui Huang ◽  
Jun Du ◽  
Tong Feng ◽  
Wenkui Zhang ◽  
...  

2010 ◽  
Vol 35 (8) ◽  
pp. 1139 ◽  
Author(s):  
Oren Guilatt ◽  
Boris Apter ◽  
Uzi Efron

2016 ◽  
Vol 49 (44) ◽  
pp. 445104 ◽  
Author(s):  
Zhengqi Liu ◽  
Guiqiang Liu ◽  
Guolan Fu ◽  
Xiaoshan Liu ◽  
Zhenping Huang ◽  
...  

1997 ◽  
Vol 469 ◽  
Author(s):  
Guénolé C.M. Silvestre

ABSTRACTSilicon-On-Insulator (SOI) materials have emerged as a very promising technology for the fabrication of high performance integrated circuits since they offer significant improvement to device performance. Thin silicon layers of good crystalline quality are now widely available on buried oxide layers of various thicknesses with good insulating properties. However, the SOI structure is quite different from that of bulk silicon. This paper will discuss a study of point-defect diffusion and recombination in thin silicon layers during high temperature annealing treatment through the investigation of stacking-fault growth kinetics. The use of capping layers such as nitride, thin thermal oxide and thick deposited oxide outlines the diffusion mechanisms of interstitials in the SOI structure. It also shows that the buried oxide layer is a very good barrier to the diffusion of point defects and that excess silicon interstitials may be reincorporated at the top interface with the thermal oxide through the formation of SiO species. Finally, from the experimental values of the activation energies for the growth and the shrinkage of stacking-faults, the energy of interstitial creation is evaluated to be 2.6 eV, the energy for interstitial migration to be 1.8 eV and the energy of interstitial generation during oxidation to be 0.2 eV.


2021 ◽  
Vol 21 (4) ◽  
pp. 2647-2652
Author(s):  
Yanchen Ji ◽  
Guoxin Song ◽  
Ruiqi Yang ◽  
Longhua Ding ◽  
Aizhu Wang ◽  
...  

In this work, CeO2 nanocrystal-decorated TiO2 nanobelt for forming a CeO2@TiO2 heterostructure. CeO2 plays a dual role in improving photocatalytic activity, not only by promoting the separation and transfer of photogenerated charge carriers, but also by increasing visible light absorption of the photocatalyst as a photosensitizer. The as-prepared CeO2@TiO2 heterostructure demonstrates the performance of organic degradation and H2 production (about 17 μmol/h/g, which is about 2.5 times higher than that of pure TiO2 nanobelts). Our work provides a facile and controllable synthesis method for high performance photocatalyst, which will have potential applications in synthesis clean/solar fuel, and photocatalytic water treatment.


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