scholarly journals Pt nanohelices with highly ordered horizontal pore channels as enhanced photothermal materials

2015 ◽  
Vol 6 (11) ◽  
pp. 6420-6424 ◽  
Author(s):  
Shuyan Song ◽  
Xiao Wang ◽  
Sheling Li ◽  
Zhuo Wang ◽  
Qi Zhu ◽  
...  
Keyword(s):  
Formation Mechanism ◽  
Growth Process ◽  
Catalytic Properties ◽  
Step Growth

Pt nanohelices with highly ordered horizontal pore channels have been successfully developed. A study of the formation mechanism has shown that a typical two-step growth process occurs. The as-obtained Pt nanohelices exhibit enhanced photothermal and catalytic properties.

High-mobility InSb thin films on GaAs (001) substrate grown by the two-step growth process

2004 ◽  
Vol 267 (1-2) ◽  
pp. 17-21 ◽  
Author(s):  
M.C. Debnath ◽  
T. Zhang ◽  
C. Roberts ◽  
L.F. Cohen ◽  
R.A. Stradling
Keyword(s):  
Thin Films ◽  
Growth Process ◽  
High Mobility ◽  
Insb Thin Films ◽  
Step Growth

A Comparative Study of GaN Films Grown on Different Faces of Sapphire by ECR-Assisted MBE

1992 ◽  
Vol 242 ◽  
Author(s):  
T. D. Moustakas ◽  
R. J. Molnar ◽  
T. Lei ◽  
G. Menon ◽  
C. R. Eddy
Keyword(s):  
Surface Morphology ◽  
Low Temperatures ◽  
Smooth Surface ◽  
Growth Process ◽  
X Ray Diffraction ◽  
Epitaxial Relationship ◽  
X Ray ◽  
Sapphire Substrates ◽  
Growth Method ◽  
Step Growth

ABSTRACTGaN films were grown on c-plane (0001), a-plane (1120) and r-plane (1102) sapphire substrates by the ECR-assisted MBE method. The films were grown using a two-step growth process, in which a GaN buffer is grown first at relatively low temperatures and the rest of the film is grown at higher temperatures. RHEED studies indicate that this growth method promotes lateral growth and leads to films with smooth surface morphology. The epitaxial relationship to the substrate, the crystalline quality and the surface morphology were investigated by RHEED, X-ray diffraction and SEM studies.

Co-nucleus 1D/2D Heterostructures with Bi2S3 Nanowire and MoS2 Monolayer: One-Step Growth and Defect-Induced Formation Mechanism

ACS Nano ◽  
2016 ◽  
Vol 10 (9) ◽  
pp. 8938-8946 ◽  
Author(s):  
Yongtao Li ◽  
Le Huang ◽  
Bo Li ◽  
Xiaoting Wang ◽  
Ziqi Zhou ◽  
...  
Keyword(s):  
Formation Mechanism ◽  
Mos2 Monolayer ◽  
One Step ◽  
Step Growth

Structural and optical characterisation of thick InN epilayers grown with a single or two step growth process on GaN(0001)

2006 ◽  
Vol 203 (1) ◽  
pp. 162-166 ◽  
Author(s):  
A. Delimitis ◽  
P. Gladkov ◽  
Ph. Komninou ◽  
Th. Kehagias ◽  
J. Arvanitidis ◽  
...  
Keyword(s):  
Growth Process ◽  
Step Growth

Mesoporous CeO2 nanoparticles assembled by hollow nanostructures: formation mechanism and enhanced catalytic properties

CrystEngComm ◽  
2014 ◽  
Vol 16 (37) ◽  
pp. 8777-8785 ◽  
Author(s):  
Jingcai Zhang ◽  
Hongxiao Yang ◽  
Shuping Wang ◽  
Wei Liu ◽  
Xiufang Liu ◽  
...  
Keyword(s):  
Formation Mechanism ◽  
Catalytic Properties ◽  
Ceo2 Nanoparticles ◽  
Hollow Nanostructures ◽  
Mesoporous Ceo2

In this paper, novel hierarchically mesoporous CeO2 nanoparticles assembled by hollow nanocones were prepared through a facile solvothermal strategy using Ce(HCOO)3 as the precursor.

Optical properties of organic–inorganic hybrid films prepared by the two-step growth process

2009 ◽  
Vol 129 (9) ◽  
pp. 1036-1041 ◽  
Author(s):  
Nobuaki Kitazawa ◽  
Dhebbajaji Yaemponga ◽  
Masami Aono ◽  
Yoshihisa Watanabe
Keyword(s):  
Optical Properties ◽  
Growth Process ◽  
Hybrid Films ◽  
Inorganic Hybrid ◽  
Step Growth

Mbe Growth and Characterization of GaAs thin Films on SiGe Buffer Layers

1988 ◽  
Vol 116 ◽  
Author(s):  
S.M. Prokes ◽  
W.F. Tseng ◽  
B.R. Wilkins ◽  
H. Dietrich ◽  
A. Christou
Keyword(s):  
Electron Microscopy ◽  
Growth Process ◽  
Molecular Beam ◽  
Buffer Layers ◽  
Defect Production ◽  
Cross Sectional ◽  
Mbe Growth ◽  
Step Growth ◽  
Scanning Electron

AbstractEpitaxial SiGe buffers have been formed by the implantation of 74Ge+ ions into Si(100)4° to <011> substrates. The implants were made at 150keV to a dose of 1×1017 /cm2 . The epitaxial layers were characterized by Rutherford backscattering, Raman spectroscopy, and electroreflectance and were found to be 300Å thick having on average a composition of Si0 . 35 Ge0.65. GaAs layers were then grown on these substrates by molecular beam epitaxy, using the standard two-step growth process. The results from Auger, Scanning Electron Microscopy, and Cross-sectional TEM indicate a lower defect production and propagation in these samples, compared to those grown directly on Si.

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