Synthesis of graphene oxide–silver nanocomposite with photochemically grown silver nanoparticles to use as a channel material in thin film field effect transistors

RSC Advances ◽  
2015 ◽  
Vol 5 (130) ◽  
pp. 107811-107821 ◽  
Author(s):  
K. Sarkar ◽  
Kalyan Jyoti Sarkar ◽  
P. Banerji
Keyword(s):  
Thin Film ◽  
Silver Nanoparticles ◽  
Graphene Oxide ◽  
Silver Nanoparticle ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Charge Carriers ◽  
Silver Nanocomposite

The transport of charge carriers in a graphene oxide–silver nanoparticle composite is found to be controlled by nanoparticle dose.

Graphene oxide thin film field effect transistors without reduction

2009 ◽  
Vol 42 (13) ◽  
pp. 135109 ◽  
Author(s):  
Meihua Jin ◽  
Hae-Kyung Jeong ◽  
Woo Jong Yu ◽  
Dong Jae Bae ◽  
Bo Ram Kang ◽  
...  
Keyword(s):  
Thin Film ◽  
Graphene Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Oxide Thin Film

Ambipolar transport of silver nanoparticles decorated graphene oxide field effect transistors

2018 ◽  
Author(s):  
Kalyan Jyoti Sarkar ◽  
K. Sarkar ◽  
B. Pal ◽  
Aparabal Kumar ◽  
Anish Das ◽  
...  
Keyword(s):  
Silver Nanoparticles ◽  
Graphene Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Ambipolar Transport

scholarly journals DNA adsorption measured with ultra-thin film organic field effect transistors

2009 ◽  
Vol 24 (9) ◽  
pp. 2935-2938 ◽  
Author(s):  
P. Stoliar ◽  
E. Bystrenova ◽  
S.D. Quiroga ◽  
P. Annibale ◽  
M. Facchini ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Dna Adsorption ◽  
Ultra Thin Film

High-Performance, Stable Organic Thin-Film Field-Effect Transistors Based on Bis-5‘-alkylthiophen-2‘-yl-2,6-anthracene Semiconductors

2005 ◽  
Vol 127 (8) ◽  
pp. 2406-2407 ◽  
Author(s):  
Hong Meng ◽  
Fangping Sun ◽  
Marc B. Goldfinger ◽  
Gary D. Jaycox ◽  
Zhigang Li ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Organic Thin Film

Self-Assembled Dipoles of o-Carborane on Gate Oxide Tuning Charge Carriers in Organic Field Effect Transistors

2021 ◽  
Author(s):  
Ming Chu ◽  
Jie Zhang ◽  
Xingwei Zeng ◽  
Zefeng Chen ◽  
Danqing Liu ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Gate Oxide ◽  
Charge Carriers ◽  
Acid Form ◽  
Organic Field Effect Transistors ◽  
Self Assembled Monolayer ◽  
Self Assembled

Molecules of 12-o-carboranyldodecylphosphonic acid form a novel self-assembled monolayer (SAM) on alumina, which can effectively tune charge carriers in organic field effect transistors (OFETs) with the assembled dipoles of o−carborane...

Azafullerene (C59N)2 thin-film field-effect transistors

2004 ◽  
Vol 84 (12) ◽  
pp. 2154-2156 ◽  
Author(s):  
Ryotaro Kumashiro ◽  
Katsumi Tanigaki ◽  
Hirotaka Ohashi ◽  
Nikos Tagmatarchis ◽  
Haruhito Kato ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
Field Effect Transistors

Steep Switching Characteristics of Partially Gated p+–n+–i–n+ Silicon-Nanowire Transistors

2021 ◽  
Vol 21 (8) ◽  
pp. 4330-4335
Author(s):  
Jaemin Son ◽  
Doohyeok Lim ◽  
Sangsig Kim
Keyword(s):  
Field Effect ◽  
Impact Ionization ◽  
Field Effect Transistors ◽  
Silicon Nanowire ◽  
Operation Mode ◽  
Feedback Loops ◽  
Charge Carriers ◽  
Electrical Characteristics ◽  
Nanowire Transistors ◽  
Switching Characteristics

In this study, we examine the electrical characteristics of p+–n+–i–n+ silicon-nanowire field-effect transistors with partially gated channels. The silicon-nanowire field-effect transistors operate with barrier height modulation through positive feedback loops of charge carriers triggered by impact ionization. Our field-effect transistors exhibit outstanding switching characteristics, with an on current of ˜10−4 A, an on/off current ratio of ˜106, and a point subthreshold swing of ˜23 mV/dec. Moreover, the devices inhibit ambipolar characteristics because of the use of the partially gated structure and feature the p-channel operation mode.

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