Theoretical perspective of the lone pair activity influence on band gap and SHG response of lead borates

RSC Advances ◽  
2015 ◽  
Vol 5 (97) ◽  
pp. 79882-79887 ◽  
Author(s):  
Danni Li ◽  
Qun Jing ◽  
Chen Lei ◽  
Shilie Pan ◽  
Bingbing Zhang ◽  
...  

Metal lone pairs play an important role in determining the SHG enhancement and bandgap red shift.

1993 ◽  
Vol 71 (8) ◽  
pp. 1123-1127 ◽  
Author(s):  
Peter Politzer ◽  
M. Edward Grice ◽  
Jane S. Murray ◽  
Jorge M. Seminario

Ab initio computational studies have been carried out for three molecules that are commonly classed as antiaromatic: cyclobutadiene (1), 1,3-diazacyclobutadiene (7), and 1,4-dihydropyrazine (6). Their dinitro and diamino derivatives were also investigated. Stabilizing or destabilizing energetic effects were quantified by means of the isodesmic reaction procedure at the MP2/6-31G*//HF/3-21G level, and calculated molecular electrostatic potentials (HF/STO-5G//HF/3-21G) were used as a probe of electron delocalization. Our results do not show extensive delocalization in the π systems of any one of the three parent molecules. The destabilization found for 1 and 7 is attributed primarily to strain and to repulsion between the localized π electrons in the C=C and C=N bonds, respectively. However, 6 is significantly stabilized, presumably due to limited delocalization of the nitrogen lone pairs. NH2 groups are highly stabilizing, apparently because of lone pair delocalization. NO2 is neither uniformly stabilizing nor destabilizing.


IUCrJ ◽  
2020 ◽  
Vol 7 (3) ◽  
pp. 480-489 ◽  
Author(s):  
Kasper Tolborg ◽  
Carlo Gatti ◽  
Bo B. Iversen

In chemistry, stereochemically active lone pairs are typically described as an important non-bonding effect, and recent interest has centred on understanding the derived effect of lone pair expression on physical properties such as thermal conductivity. To manipulate such properties, it is essential to understand the conditions that lead to lone pair expression and provide a quantitative chemical description of their identity to allow comparison between systems. Here, density functional theory calculations are used first to establish the presence of stereochemically active lone pairs on antimony in the archetypical chalcogenide MnSb2O4. The lone pairs are formed through a similar mechanism to those in binary post-transition metal compounds in an oxidation state of two less than their main group number [e.g. Pb(II) and Sb(III)], where the degree of orbital interaction (covalency) determines the expression of the lone pair. In MnSb2O4 the Sb lone pairs interact through a void space in the crystal structure, and their their mutual repulsion is minimized by introducing a deflection angle. This angle increases significantly with decreasing Sb—Sb distance introduced by simulating high pressure, thus showing the highly destabilizing nature of the lone pair interactions. Analysis of the chemical bonding in MnSb2O4 shows that it is dominated by polar covalent interactions with significant contributions both from charge accumulation in the bonding regions and from charge transfer. A database search of related ternary chalcogenide structures shows that, for structures with a lone pair (SbX 3 units), the degree of lone pair expression is largely determined by whether the antimony–chalcogen units are connected or not, suggesting a cooperative effect. Isolated SbX 3 units have larger X—Sb—X bond angles and therefore weaker lone pair expression than connected units. Since increased lone pair expression is equivalent to an increased orbital interaction (covalent bonding), which typically leads to increased heat conduction, this can explain the previously established correlation between larger bond angles and lower thermal conductivity. Thus, it appears that for these chalcogenides, lone pair expression and thermal conductivity may be related through the degree of covalency of the system.


2020 ◽  
Vol 12 (4) ◽  
pp. 545-554
Author(s):  
R. Khajuria ◽  
A. Sharma ◽  
P. Sharma

The rationale of this study is to investigate band gap tailoring of Sb-Se-Sn chalcogenide glasses. This study has been accompanied by the assessment of various theoretical parameters such as average co-ordination number, Lone-pair of electrons, number of constraints, average heat of atomization, mean bond energy and glass transition temperature. It has been observed that almost all these physical parameters have been enhanced with the increase in tin (Sn) content except Lone-pair of electrons. The number of lone-pair electrons has been decreased with the increase in Sn content. The glass transition temperature has been observed to increase due to the addition of Sn atom in the Se-Sb glassy system. The band gap is decreasing with increase in Sn content due to overall decrease in the average single bond energy of the Sb-Se-Sn glassy system.  


2010 ◽  
Vol 8 (1) ◽  
pp. 142-148 ◽  
Author(s):  
L. Gomathi Devi ◽  
Nagaraju Kottam ◽  
S. Girish Kumar ◽  
K. Eraiah Rajashekhar

AbstractAnatase TiO2 was prepared by sol-gel method through the hydrolysis of TiCl4. Ni2+ was doped into the TiO2 matrix in the concentration range of 0.02 to 0.1 at.% and characterized by various analytical techniques. Powder X-ray diffraction revealed only anatase phase for all the samples, while diffuse reflectance spectral studies indicated a red shift in the band gap absorption to the visible region. The photocatalytic activities of these photocatalysts were probed for the degradation of methyl orange under natural solar light. The photocatalyst with optimum doping of 0.08 at.% Ni2+, showed enhanced activity, which is attributed to: (i) effective separation of charge carriers and (ii) large red shift in the band gap to visible region. The influence of crystallite size and dopant concentration on the charge carrier trapping — recombination dynamics is investigated.


1988 ◽  
Vol 144 ◽  
Author(s):  
K. Kash ◽  
R. Bhat ◽  
Derek D. Mahoney ◽  
J.M. Worlock ◽  
P.S.D. Lin ◽  
...  

ABSTRACTWe describe here an effort to provide lateral confinement of carriers within a continuous InGaAs quantum well by creating a pattern of strain in the well. A compressed InGaAsP layer overlying the quantum well and the InP barrier was patterned into submicron stressor wires by etching to within approximately 20 nm of the InP barrier. The relaxation of the compression at the edges of the quaternary stressors resulted in dilation of the quantum well material under their centers, thus lowering the band gap of the material, providing confinement for both electrons and holes there. We observed a red shift of the quantum well luminescence of 7 meV for 400 nm wide wires, evidence for the strain-induced lateral confinement. This is the first observation of a red-shifted band gap in submicron strain-confining structures.


2020 ◽  
Vol 2 (1) ◽  
pp. 384-393
Author(s):  
Erik S. Skibinsky-Gitlin ◽  
Salvador Rodríguez-Bolívar ◽  
Marco Califano ◽  
Francisco M. Gómez-Campos

Large blue shifts in the intra-conduction-band transitions and the red shift of the band gap absorption are both the manifestation of strong interdot coupling in the film.


2015 ◽  
Vol 16 (3) ◽  
pp. 694-696 ◽  
Author(s):  
A. D. Clauss ◽  
M. Ayoub ◽  
J. W. Moore ◽  
C. R. Landis ◽  
F. Weinhold
Keyword(s):  

We respond to recent comments (Hibertyet al., 2015) on our earlier article (Clausset al., 2014) concerning “rabbit ears” depictions of lone pair orbitals in water and other species.


2014 ◽  
Vol 104 (18) ◽  
pp. 181904 ◽  
Author(s):  
XianTao Wei ◽  
Jun Wen ◽  
Shuo Li ◽  
Shan Huang ◽  
Jun Cheng ◽  
...  

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