Effects of Li doping on the negative bias stress stability of solution-processed ZnO thin film transistors

RSC Advances ◽  
2015 ◽  
Vol 5 (84) ◽  
pp. 68392-68396 ◽  
Author(s):  
Bokyung Kim ◽  
Si Yun Park ◽  
Jieun Ko ◽  
Young-Jae Kim ◽  
Youn Sang Kim
Keyword(s):  
Thin Film Transistors ◽  
Field Effect ◽  
Negative Bias ◽  
Zno Thin Film ◽  
Electrical Characteristics ◽  
Field Effect Mobility ◽  
Li Doping ◽  
Bias Stress ◽  
Stability Of Solution ◽  
Doped Zno

To investigate the effect of Li dopant on the electrical characteristics under negative bias stress (NBS), we analysed ZnO and Li doped ZnO TFTs. The Li dopant enhanced the field effect mobility and sustained the variation in Von of the ZnO TFTs.

Effect of High-Speed Blade Coating on Electrical Characteristics in Polymer Based Transistors

2020 ◽  
Vol 20 (9) ◽  
pp. 5486-5490
Author(s):  
Jun-Ik Park ◽  
Hyun-Seok Jeong ◽  
Premkumar Vincent ◽  
Jihwan Park ◽  
Do-Kyung Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Surface Roughness ◽  
Conjugated Polymer ◽  
Thin Film Transistors ◽  
Field Effect ◽  
High Speed ◽  
Electrical Characteristics ◽  
Field Effect Mobility ◽  
Polymer Thin Film ◽  
Blade Coating

We explore the effect of high-speed blade coating on electrical characteristics of conjugated polymer-based thin-film transistors (TFTs). As the blade-coating speed increased, the thickness of the polymer thin-film was naturally increased while the surface roughness was found to be unchanged. Polymer TFTs show two remarkable tendencies on the magnitude of field-effect mobility with increasing blade-coating speed. As the blade-coating speed increased up to 2 mm/s, the fieldeffect mobility increased to 4.72 cm2V−1s−1. However, when the coating speed reached 6 mm/s beyond 2 mm/s, the field-effect mobility rather decreased to 3.18 cm2V−1s−1. The threshold voltage was positively shifted from 2.09 to 8.29 V with respect to increase in blade-coating speed.

Bias stress stable aqueous solution derived Y-doped ZnO thin film transistors

2011 ◽  
Vol 21 (35) ◽  
pp. 13524 ◽  
Author(s):  
Taehwan Jun ◽  
Keunkyu Song ◽  
Yangho Jung ◽  
Sunho Jeong ◽  
Jooho Moon
Keyword(s):  
Thin Film ◽  
Aqueous Solution ◽  
Thin Film Transistors ◽  
Zno Thin Film ◽  
Bias Stress ◽  
Doped Zno

scholarly journals Channel Defect Profiling and Passivation for ZnO Thin-Film Transistors

Nanomaterials ◽  
2020 ◽  
Vol 10 (6) ◽  
pp. 1186
Author(s):  
Soo Cheol Kang ◽  
So Young Kim ◽  
Sang Kyung Lee ◽  
Kiyung Kim ◽  
Billal Allouche ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Oxygen Vacancies ◽  
Drain Current ◽  
Vacuum Treatment ◽  
Trap Level ◽  
Zno Thin Film ◽  
Electrical Characteristics ◽  
Bias Stress ◽  
Trap Assisted Tunneling

The electrical characteristics of Zinc oxide (ZnO) thin-film transistors are analyzed to apprehend the effects of oxygen vacancies after vacuum treatment. The energy level of the oxygen vacancies was found to be located near the conduction band of ZnO, which contributed to the increase in drain current (ID) via trap-assisted tunneling when the gate voltage (VG) is lower than the specific voltage associated with the trap level. The oxygen vacancies were successfully passivated after the annealing of ZnO in oxygen ambient. We determined that the trap-induced Schottky barrier lowering reduced a drain barrier when the drain was subjected to negative bias stress. Consequentially, the field effect mobility increased from 8.5 m2 V−1·s−1 to 8.9 m2 V−1·s−1 and on-current increased by ~13%.

scholarly journals Numerical Analysis on Effective Mass and Traps Density Dependence of Electrical Characteristics of a-IGZO Thin-Film Transistors

Electronics ◽  
2020 ◽  
Vol 9 (1) ◽  
pp. 119 ◽  
Author(s):  
Jihwan Park ◽  
Do-Kyung Kim ◽  
Jun-Ik Park ◽  
In Man Kang ◽  
Jaewon Jang ◽  
...  
Keyword(s):  
Thin Film ◽  
Effective Mass ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Electron Mass ◽  
Simulation Methods ◽  
Electrical Characteristics ◽  
Field Effect Mobility ◽  
Electron Effective Mass ◽  
Amorphous Ingazno

We have investigated the effect of electron effective mass (me*) and tail acceptor-like edge traps density (NTA) on the electrical characteristics of amorphous-InGaZnO (a-IGZO) thin-film transistors (TFTs) through numerical simulation. To examine the credibility of our simulation, we found that by adjusting me* to 0.34 of the free electron mass (mo), we can preferentially derive the experimentally obtained electrical properties of conventional a-IGZO TFTs through our simulation. Our initial simulation considered the effect of me* on the electrical characteristics independent of NTA. We varied the me* value while not changing the other variables related to traps density not dependent on it. As me* was incremented to 0.44 mo, the field-effect mobility (µfe) and the on-state current (Ion) decreased due to the higher sub-gap scattering based on electron capture behavior. However, the threshold voltage (Vth) was not significantly changed due to fixed effective acceptor-like traps (NTA). In reality, since the magnitude of NTA was affected by the magnitude of me*, we controlled me* together with NTA value as a secondary simulation. As the magnitude of both me* and NTA increased, µfe and Ion deceased showing the same phenomena as the first simulation. The magnitude of Vth was higher when compared to the first simulation due to the lower conductivity in the channel. In this regard, our simulation methods showed that controlling me* and NTA simultaneously would be expected to predict and optimize the electrical characteristics of a-IGZO TFTs more precisely.

scholarly journals Electrical Performance and Bias-Stress Stability of Amorphous InGaZnO Thin-Film Transistors with Buried-Channel Layers

Micromachines ◽  
2019 ◽  
Vol 10 (11) ◽  
pp. 779
Author(s):  
Ying Zhang ◽  
Haiting Xie ◽  
Chengyuan Dong
Keyword(s):  
Thin Film Transistors ◽  
Field Effect ◽  
Nitrogen Doping ◽  
Electrical Performance ◽  
Field Effect Mobility ◽  
Nitrogen Doped ◽  
Bias Stress ◽  
Channel Layer ◽  
Buried Channel ◽  
Amorphous Ingazno

To improve the electrical performance and bias-stress stability of amorphous InGaZnO thin-film transistors (a-IGZO TFTs), we fabricated and characterized buried-channel devices with multiple-stacked channel layers, i.e., a nitrogen-doped a-IGZO film (front-channel layer), a conventional a-IGZO film (buried-channel layer), and a nitrogen-doped a-IGZO film (back-channel layer). The larger field-effect mobility (5.8 cm2V−1s−1), the smaller subthreshold swing value (0.8 V/dec, and the better stability (smaller threshold voltage shifts during bias-stress and light illumination tests) were obtained for the buried-channel device relative to the conventional a-IGZO TFT. The specially designed channel-layer structure resulted in multiple conduction channels and hence large field-effect mobility. The in situ nitrogen-doping caused reductions in both the front-channel interface trap density and the density of deep states in the bulk channel layers, leading to a small subthreshold swing value. The better stability properties may be related to both the reduced trap states by nitrogen-doping and the passivation effect of the nitrogen-doped a-IGZO films at the device back channels.

Improvement in the Positive Bias Temperature Stability of SnOx-Based Thin Film Transistors by Hf and Zn Doping

2015 ◽  
Vol 15 (10) ◽  
pp. 7606-7610 ◽  
Author(s):  
Dongsuk Han ◽  
Jaehyung Park ◽  
Minsoo Kang ◽  
Hyeongtag Jeon ◽  
Jongwan Park
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Defect Density ◽  
Temperature Stability ◽  
Oxidation Potential ◽  
Oxide Thin Film ◽  
Electrical Characteristics ◽  
Field Effect Mobility

We investigated the performance of tin oxide thin film transistors (TFTs) using DC magnetron sputtering. A remarkable improvement in the transfer characteristics was obtained for the Hf-doped tin oxide (HTO) TFT. We also developed amorphous hafnium-zinc-tin oxide (HZTO) thin film transistors and investigated the effects of hafnium doping on the electrical characteristics of the HTO TFTs. Doping with hafnium resulted in a reduced defect density in the tin oxide channel layer related to oxygen vacancies, which may result from increased field effect mobility. Zinc atoms have relatively higher oxidation potential compared to tin atoms, so more oxygen molecules can be absorbed and more electrons are trapped in the HZTO films. The HZTO TFTs exhibited good electrical characteristics with a field effect mobility of 10.98 cm2/Vs, and a high ION/IOFF ratio over 108.

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