Highly efficient NIR to visible upconversion in a ZnO:Er,Yb thin film deposited by a AACVD atmospheric pressure process

RSC Advances ◽  
2015 ◽  
Vol 5 (74) ◽  
pp. 60246-60253 ◽  
Author(s):  
R. Elleuch ◽  
R. Salhi ◽  
J.-L. Deschanvres ◽  
R. Maalej
Keyword(s):  
Thin Film ◽  
Atmospheric Pressure ◽  
Wurtzite Phase ◽  
Highly Efficient ◽  
Upconversion Emissions ◽  
Hexagonal Wurtzite Phase

A ZnO:Er,Yb hexagonal wurtzite phase structured thin film with highly efficient NIR to visible upconversion emissions.

Highly efficient nitrogen fixation enabled by an atmospheric pressure rotating gliding arc

2021 ◽  
Author(s):  
Hang Chen ◽  
Angjian Wu ◽  
Stéphanie Mathieu ◽  
Peihan Gao ◽  
Xiaodong Li ◽  
...  
Keyword(s):  
Nitrogen Fixation ◽  
Atmospheric Pressure ◽  
Gliding Arc ◽  
Highly Efficient

scholarly journals Author Correction: Microscopic origins of performance losses in highly efficient Cu(In,Ga)Se2 thin-film solar cells

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Maximilian Krause ◽  
Aleksandra Nikolaeva ◽  
Matthias Maiberg ◽  
Philip Jackson ◽  
Dimitrios Hariskos ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Thin Film Solar Cells ◽  
Highly Efficient

A low cost and single source atmospheric pressure vapor phase epitaxy of ZnS for thin film photovoltaic applications

2018 ◽  
Vol 221 ◽  
pp. 216-219 ◽  
Author(s):  
Y. Yusoff ◽  
P. Chelvanathan ◽  
N. Kamaruddin ◽  
Md. Akhtaruzzaman ◽  
N. Amin
Keyword(s):  
Thin Film ◽  
Vapor Phase ◽  
Atmospheric Pressure ◽  
Low Cost ◽  
Vapor Phase Epitaxy ◽  
Single Source ◽  
Photovoltaic Applications

Highly efficient CO2 fixation into cyclic carbonate by hydroxyl-functionalized protic ionic liquids at atmospheric pressure

2021 ◽  
Vol 511 ◽  
pp. 111756
Author(s):  
Cheng Li ◽  
Fei Liu ◽  
Tianxiang Zhao ◽  
Jiarui Gu ◽  
Peng Chen ◽  
...  
Keyword(s):  
Ionic Liquids ◽  
Atmospheric Pressure ◽  
Co2 Fixation ◽  
Cyclic Carbonate ◽  
Protic Ionic Liquids ◽  
Highly Efficient

Hydrogenation Effect of Amorphous Silicon Thin Film Transistors by Atmospheric Pressure CVD

1993 ◽  
Vol 297 ◽  
Author(s):  
Byung Chul Ahn ◽  
Jeong Hyun Kim ◽  
Dong Gil Kim ◽  
Byeong Yeon Moon ◽  
Kwang Nam Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Atmospheric Pressure ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Low Cost ◽  
Thin Film Transistor ◽  
Field Effect Mobility ◽  
Silicon Thin Film ◽  
Hydrogenation Effect

The hydrogenation effect was studied in the fabrication of amorphous silicon thin film transistor using APCVD technique. The inverse staggered type a-Si TFTs were fabricated with the deposited a-Si and SiO2 films by the atmospheric pressure (AP) CVD. The field effect mobility of the fabricated a-Si TFT is 0.79 cm2/Vs and threshold voltage is 5.4V after post hydrogenation. These results can be applied to make low cost a-Si TFT array using an in-line APCVD system.

Sign in / Sign up

Export Citation Format

Share Document