Hysteresis-free liquid crystal devices based on solution-derived oxide compound films treated by ion beam irradiation

RSC Advances ◽  
2015 ◽  
Vol 5 (67) ◽  
pp. 54079-54084 ◽  
Author(s):  
Ju Hwan Lee ◽  
Hae-Chang Jeong ◽  
Hong-Gyu Park ◽  
Dae-Shik Seo
Keyword(s):  
Response Times ◽  
Ion Beam ◽  
Fast Response ◽  
Ion Beam Irradiation ◽  
Oxide Compound ◽  
Liquid Crystal Devices ◽  
Threshold Voltages ◽  
High K ◽  
Low Threshold ◽  
High Dielectric

Compounds with a high dielectric constant (high-k compounds) offer fast response times and low threshold voltages, and achieve a hysteresis-free LC device, thereby overcoming a image sticking issue.

Practical Gate-First Metal Gate/Dual High-k CMOS Integration with Low Threshold Voltages

2019 ◽  
Vol 13 (2) ◽  
pp. 209-218 ◽  
Author(s):  
Yasuo Nara ◽  
Nobuyuki Mise ◽  
Masaru Kadoshima ◽  
Tetsu Morooka ◽  
Satoshi Kamiyama ◽  
...  
Keyword(s):  
Metal Gate ◽  
Threshold Voltages ◽  
High K ◽  
Low Threshold

scholarly journals Ion Beam Irradiation-induced Amorphization in Nano-sized KxLnyTa2O7-v Tantalate Pyrochlore

2011 ◽  
Vol 1298 ◽  
Author(s):  
Fengyuan Lu ◽  
May Nyman ◽  
Yiqiang Shen ◽  
Zhili Dong ◽  
Gongkai Wang ◽  
...  
Keyword(s):  
Single Phase ◽  
Elevated Temperatures ◽  
Ion Beam ◽  
Fluorite Structure ◽  
Radiation Tolerance ◽  
Ion Beam Irradiation ◽  
Critical Temperatures ◽  
Grain Sizes ◽  
High K

ABSTRACTThe radiation response of nano-sized tantalate pyrochlores, KxLnyTa2O7-v (Ln = Gd, Y, and Lu) with average grain sizes of ~ 10 nm was investigated using 1 MeV Kr2+ ion beam irradiations. EDS measurements and XRD refinement reveal that the Y3+ and Lu3+-doped samples consist of two pyrochlore phases as K0.8YTa2O6.9/K0.4Y0.8Ta2O6.4 and KLuTa2O7/K0.4Lu0.8Ta2O6.4 respectively; whereas a single phase of K0.8GdTa2O7 only exists in the Gd3+-doped tantalate pyrochlore. In situ TEM observation confirms ion beam-induced amorphization occurring in all of the nano-sized KxLnyTa2O7-v. At elevated temperatures, both K0.8GdTa2O7 and K0.8YTa2O6.9/K0.4Y0.8Ta2O6.4 exhibit higher radiation tolerance than KLuTa2O7/K0.4Lu0.8Ta2O6.4, and the critical temperatures of K0.8GdTa2O7 and K0.8YTa2O6.9/K0.4Y0.8Ta2O6.4 are estimated to be 1167 ± 41 K and 1165 ± 34 K, respectively, lower than that of KLuTa2O7/K0.4Lu0.8Ta2O6.4 (~ 1291 K). The K0.8GdTa2O7, K0.8YTa2O6.9 and KLuTa2O7 phases have less structural deviation from the parent fluorite structure and thus may be responsible for the overall radiation tolerance. The high K+ occupancy at pyrochlore A sites in KLuTa2O7 is believed to contribute to the decrease of radiation tolerance, consistent with the large ionic radius ratio of K+/Ta5+. These results highlight that the radiation tolerance of nanostructured materials is highly compositional dependent, and nano-sized tantalate pyrochlores are sensitive to radiation damage.

Nanostructure of semiconductor quantum dots in a borosilicate glass matrix by complementary use of HREM and AEM

1990 ◽  
Vol 48 (4) ◽  
pp. 728-729
Author(s):  
M.J. Kim ◽  
L.C. Liu ◽  
S.H. Risbud ◽  
R.W. Carpenter
Keyword(s):  
Quantum Dots ◽  
Borosilicate Glass ◽  
Glass Matrix ◽  
Optical Switching ◽  
Response Times ◽  
Fast Response ◽  
Processing Technique ◽  
Internal Stresses ◽  
Electron Hole ◽  
Spatial Dimensions

When the size of a semiconductor is reduced by an appropriate materials processing technique to a dimension less than about twice the radius of an exciton in the bulk crystal, the band like structure of the semiconductor gives way to discrete molecular orbital electronic states. Clusters of semiconductors in a size regime lower than 2R {where R is the exciton Bohr radius; e.g. 3 nm for CdS and 7.3 nm for CdTe) are called Quantum Dots (QD) because they confine optically excited electron- hole pairs (excitons) in all three spatial dimensions. Structures based on QD are of great interest because of fast response times and non-linearity in optical switching applications.In this paper we report the first HREM analysis of the size and structure of CdTe and CdS QD formed by precipitation from a modified borosilicate glass matrix. The glass melts were quenched by pouring on brass plates, and then annealed to relieve internal stresses. QD precipitate particles were formed during subsequent "striking" heat treatments above the glass crystallization temperature, which was determined by differential thermal analysis.

Compact and efficient gas diffusion electrodes based on nanoporous alumina membranes for microfuel cells and gas sensors

The Analyst ◽  
2020 ◽  
Vol 145 (1) ◽  
pp. 122-131 ◽  
Author(s):  
Wanda V. Fernandez ◽  
Rocío T. Tosello ◽  
José L. Fernández
Keyword(s):  
Response Times ◽  
Hydrogen Oxidation ◽  
Fast Response ◽  
Gas Diffusion ◽  
Limiting Current ◽  
Gas Diffusion Electrodes ◽  
Nanoporous Alumina ◽  
Alumina Membranes ◽  
Current Densities ◽  
Microfuel Cells

Gas diffusion electrodes based on nanoporous alumina membranes electrocatalyze hydrogen oxidation at high diffusion-limiting current densities with fast response times.

Focused Ion Beam Irradiation Induced Damages on CMOS and Bipolar Technologies

1998 ◽  
Author(s):  
J. Benbrik ◽  
G. Rolland ◽  
P. Perdu ◽  
B. Benteo ◽  
M. Casari ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Electronic Devices ◽  
Complete Characterization ◽  
Bipolar Transistors ◽  
Ion Beam Irradiation ◽  
Physical Mechanisms ◽  
Dc Characteristics ◽  
Electrical Degradation ◽  
Physical Phenomena

Abstract Focused Ion Beam is commonly used for IC repairs and modifications. However, FIB operation may also induce a damaging impact which can takes place far from the working area due to the charge-up phenomenon. A complete characterization joined to an in-depth understanding of the physical phenomena arising from FIB irradiation is therefore necessary to take into account spurious FIB induced effects and to enhance the success of FIB modifications. In this paper, we present the effects of FIB irradiation on the electrical DC performances of different electronic devices such as nMOS and pMOS transistors, CMOS inverters, PN junctions and bipolar transistors. From the observed behavior of the DC characteristics evolution of the devices, some suggestions about physical mechanisms inducing the electrical degradation are proposed.

Pedigree Construction and SSR Analysis of Broomcorn Millet Mutant by 12C6+ Ion Beam Irradiation

2018 ◽  
Vol 44 (1) ◽  
pp. 144
Author(s):  
Tian-Peng LIU ◽  
Kong-Jun DONG ◽  
Xi-Cun DONG ◽  
Ji-Hong HE ◽  
Min-Xuan LIU ◽  
...  
Keyword(s):  
Ion Beam ◽  
Beam Irradiation ◽  
Ion Beam Irradiation ◽  
Ssr Analysis ◽  
Broomcorn Millet

Investigation of the Mechanism of Conductivity of NbN Thin Films, Modified Under Composite Ion Beam Irradiation

2016 ◽  
Vol 7 (3) ◽  
pp. 172-179 ◽  
Author(s):  
B. A. Gurovich ◽  
K. E. Prikhodko ◽  
M. A. Tarkhov ◽  
A. G. Domantovsky ◽  
D. A. Komarov ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Beam Irradiation ◽  
Ion Beam Irradiation
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