Epitaxial growth of highly infrared-transparent and conductive CuScO2 thin film by polymer-assisted-deposition method

RSC Advances ◽  
2015 ◽  
Vol 5 (61) ◽  
pp. 49301-49307 ◽  
Author(s):  
Ya-Hui Chuai ◽  
Hong-Zhi Shen ◽  
Ya-Dan Li ◽  
Bing Hu ◽  
Yu Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Epitaxial Growth ◽  
Optoelectronic Devices ◽  
Wide Bandgap ◽  
Deposition Method ◽  
P Type

As an important wide bandgap p-type conductive delafossite material, CuScO2 (CSO) has been intensively investigated for its wide applications in multi-functional optoelectronic devices.

scholarly journals Epitaxial Growth and Bandgap Control of Ni1-xMgxO Thin Film Grown by Mist Chemical Vapor Deposition Method

MRS Advances ◽  
2020 ◽  
Vol 5 (31-32) ◽  
pp. 1705-1712
Author(s):  
Takumi Ikenoue ◽  
Satoshi Yoneya ◽  
Masao Miyake ◽  
Tetsuji Hirato
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Wide Bandgap ◽  
Chemical Vapor Deposition Method ◽  
Deposition Method ◽  
Orientation Relationships ◽  
P Type

ABSTRACTWide-bandgap oxide semiconductors have received significant attention as they can produce devices with high output and breakdown voltage. p-Type conductivity control is essential to realize bipolar devices. Therefore, as a rare wide-bandgap p-type oxide semiconductor, NiO (3.7 eV) has garnered considerable attention. In view of the heterojunction device with Ga2O3 (4.5–5.0 eV), a p-type material with a large bandgap is desired. Herein, we report the growth of a Ni1-xMgxO thin film, which has a larger bandgap than NiO, on α-Al2O3 (0001) substrates that was developed using the mist chemical vapor deposition method. The Ni1-xMgxO thin films epitaxially grown on α-Al2O3 substrates showed crystallographic orientation relationships identical to those of NiO thin films. The Mg composition of Ni1-xMgxO was easily controlled by the Mg concentration of the precursor solution. The Ni1-xMgxO thin film with a higher Mg composition had a larger bandgap, and the bandgap reached 3.9 eV with a Ni1-xMgxO thin film with x = 0.28. In contrast to an undoped Ni1-xMgxO thin film showing insulating properties, the Li-doped Ni1-xMgxO thin film had resistivities of 101–105 Ω∙cm depending on the Li precursor concentration, suggesting that Li effectively acts as an acceptor.

Epitaxial growth of β-Ga2O3 (-201) thin film on fourfold symmetry CeO2 (001) substrate for heterogeneous integrations

2021 ◽  
Author(s):  
Xiao Tang ◽  
Kuanghui Li ◽  
Che-Hao Liao ◽  
Dongxing Zheng ◽  
chen Liu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Epitaxial Growth ◽  
Gas Sensors ◽  
High Power ◽  
Wide Bandgap ◽  
Semiconductor Material ◽  
Uv Detectors ◽  
Wide Bandgap Semiconductor ◽  
Fourfold Symmetry

β-Ga2O3 is a wide bandgap semiconductor material promising for many fields such as gas sensors, UV detectors, and high power electronics. Until now, most epitaxial β-Ga2O3 thin films could only...

Cu-based quaternary chalcogenide Cu2BaSnS4 thin films acting as hole transport layers in inverted perovskite CH3NH3PbI3 solar cells

2017 ◽  
Vol 5 (6) ◽  
pp. 2920-2928 ◽  
Author(s):  
Jie Ge ◽  
Corey R. Grice ◽  
Yanfa Yan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solar Cells ◽  
Wide Bandgap ◽  
Hole Transport ◽  
Thin Film Solar Cells ◽  
Hole Transport Layers ◽  
P Type

p-Type wide-bandgap Cu2BaSnS4 holds promise for use as hole transport material in inverted perovskite CH3NH3PbI3 thin-film solar cells.

scholarly journals Novel P‐Type Wide Bandgap Manganese Oxide Quantum Dots Operating at Deep UV Range for Optoelectronic Devices

2019 ◽  
Vol 7 (21) ◽  
pp. 1900801 ◽  
Author(s):  
Somak Mitra ◽  
Yusin Pak ◽  
Naresh Alaal ◽  
Mohamed N. Hedhili ◽  
Dhaifallah R. Almalawi ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Manganese Oxide ◽  
Optoelectronic Devices ◽  
Wide Bandgap ◽  
Deep Uv ◽  
P Type ◽  
Uv Range

Effective performance improvement of organic thin film transistors with multi-layer modifications

2020 ◽  
Vol 91 (3) ◽  
pp. 30201
Author(s):  
Hang Yu ◽  
Jianlin Zhou ◽  
Yuanyuan Hao ◽  
Yao Ni
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Performance Enhancement ◽  
Organic Thin Film Transistors ◽  
Electrical Performance ◽  
Hole Injection ◽  
Organic Thin Film ◽  
Effective Performance ◽  
Significant Performance ◽  
P Type

Organic thin film transistors (OTFTs) based on dioctylbenzothienobenzothiophene (C8BTBT) and copper (Cu) electrodes were fabricated. For improving the electrical performance of the original devices, the different modifications were attempted to insert in three different positions including semiconductor/electrode interface, semiconductor bulk inside and semiconductor/insulator interface. In detail, 4,4′,4′′-tris[3-methylpheny(phenyl)amino] triphenylamine (m-MTDATA) was applied between C8BTBTand Cu electrodes as hole injection layer (HIL). Moreover, the fluorinated copper phthalo-cyanine (F16CuPc) was inserted in C8BTBT/SiO2 interface to form F16CuPc/C8BTBT heterojunction or C8BTBT bulk to form C8BTBT/F16CuPc/C8BTBT sandwich configuration. Our experiment shows that, the sandwich structured OTFTs have a significant performance enhancement when appropriate thickness modification is chosen, comparing with original C8BTBT devices. Then, even the low work function metal Cu was applied, a normal p-type operate-mode C8BTBT-OTFT with mobility as high as 2.56 cm2/Vs has been fabricated.

Epitaxial Growth of Sr0.3Ba0.7Nb2O6 Thin Films Prepared by Sol-Gel Process

1999 ◽  
Vol 606 ◽  
Author(s):  
Keishi Nishio ◽  
Jirawat Thongrueng ◽  
Yuichi Watanabe ◽  
Toshio Tsuchiya
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Epitaxial Growth ◽  
Raw Materials ◽  
Substrate Surface ◽  
Sol Gel ◽  
Tungsten Bronze ◽  
Monomethyl Ether ◽  
Tetragonal Tungsten Bronze ◽  
Sol Gel Process

AbstructWe succeeded in the preparation of strontium-barium niobate (Sr0.3Ba0.7Nb2O6 : SBN30)that have a tetragonal tungsten bronze type structure thin films on SrTiO3 (100), STO, or La doped SrTiO3 (100), LSTO, single crystal substrates by a spin coating process. LSTO substrate can be used for electrode. A homogeneous coating solution was prepared with Sr and Ba acetates and Nb(OEt)5 as raw materials, and acetic acid and diethylene glycol monomethyl ether as solvents. The coating thin films were sintered at temperature from 700 to 1000°C for 10 min in air. It was confirmed that the thin films on STO substrate sintered above 700°C were in the epitaxial growth because the 16 diffraction spots were observed on the pole figure using (121) reflection. The <130> and <310> direction of the thin film on STO were oriented with the c-axis in parallel to the substrate surface. However, the diffraction spots of thin film on LSTO substrate sintered at 700°C were corresponds to the expected pattern for (110).

Thermodynamics and Microstructure Development in the Thin Film Reaction of Aluminum on Silicon Carbide

1995 ◽  
Vol 403 ◽  
Author(s):  
T. S. Hayes ◽  
F. T. Ray ◽  
K. P. Trumble ◽  
E. P. Kvam
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Silicon Carbide ◽  
Ohmic Contacts ◽  
Microstructure Development ◽  
P Type ◽  
Microstructural Studies

AbstractA refined thernodynamic analysis of the reaction between molen Al and SiC is presented. The calculations indicate much higher Si concentrations for saturation with respect to AkC 3 formation than previously reported. Preliminary microstructural studies confirm the formation of interfacial A14C3 for pure Al thin films on SiC reacted at 9000C. The implications of the calculations and experimental observations for the production of ohmic contacts to p-type SiC are discussed.

Conducting polymer thin film for optoelectronic devices applications

2021 ◽  
Author(s):  
Mohamed H. Abdel‐Aziz ◽  
Mohammed Zwawi ◽  
Ahmed F. Al‐Hossainy ◽  
Mohamed Sh. Zoromba
Keyword(s):  
Thin Film ◽  
Conducting Polymer ◽  
Optoelectronic Devices ◽  
Polymer Thin Film
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