Transport properties and enhanced thermoelectric performance of aluminum doped Cu3SbSe4

RSC Advances ◽  
2015 ◽  
Vol 5 (40) ◽  
pp. 31399-31403 ◽  
Author(s):  
Yuanyue Li ◽  
Xiaoying Qin ◽  
Di Li ◽  
Xiyu Li ◽  
Yongfei Liu ◽  
...  
Keyword(s):  
Transport Properties ◽  
Thermoelectric Properties ◽  
Electrical Transport ◽  
Thermoelectric Performance ◽  
Temperature Range

The electrical transport and thermoelectric properties of Cu3Sb1−xAlxSe4 (x = 0, 0.01, 0.02 and 0.03) compounds are investigated in the temperature range of 300–600 K.

scholarly journals Tuning the Electrical and Thermoelectric Properties of N Ion Implanted SrTiO3 Thin Films and Their Conduction Mechanisms

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Anuradha Bhogra ◽  
Anha Masarrat ◽  
Ramcharan Meena ◽  
Dilruba Hasina ◽  
Manju Bala ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Transport Properties ◽  
Thermoelectric Properties ◽  
Temperature Regime ◽  
Electrical Transport ◽  
Ion Beam ◽  
Temperature Range ◽  
Conduction Mechanisms ◽  
Band Conduction

Abstract The SrTiO3 thin films were fabricated by pulsed laser deposition. Subsequently ion implantation with 60 keV N ions at two different fluences 1 × 1016 and 5 × 1016 ions/cm2 and followed by annealing was carried out. Thin films were then characterized for electronic structure, morphology and transport properties. X-ray absorption spectroscopy reveals the local distortion of TiO6 octahedra and introduction of oxygen vacancies due to N implantation. The electrical and thermoelectric properties of these films were measured as a function of temperature to understand the conduction and scattering mechanisms. It is observed that the electrical conductivity and Seebeck coefficient (S) of these films are significantly enhanced for higher N ion fluence. The temperature dependent electrical resistivity has been analysed in the temperature range of 80–400 K, using various conduction mechanisms and fitted with band conduction, near neighbour hopping (NNH) and variable range hopping (VRH) models. It is revealed that the band conduction mechanism dominates at high temperature regime and in low temperature regime, there is a crossover between NNH and VRH. The S has been analysed using the relaxation time approximation model and dispersive transport mechanism in the temperature range of 300–400 K. Due to improvement in electrical conductivity and thermopower, the power factor is enhanced to 15 µWm−1 K−2 at 400 K at the higher ion fluence which is in the order of ten times higher as compared to the pristine films. This study suggests that ion beam can be used as an effective technique to selectively alter the electrical transport properties of oxide thermoelectric materials.

Effects of Nb doping on thermoelectric properties of Zn4Sb3 at high temperatures

2009 ◽  
Vol 24 (2) ◽  
pp. 430-435 ◽  
Author(s):  
D. Li ◽  
H.H. Hng ◽  
J. Ma ◽  
X.Y. Qin
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
High Temperatures ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Thermoelectric Performance ◽  
Temperature Range ◽  
A Value ◽  
Nb Doping ◽  
Thermal Conductivities

The thermoelectric properties of Nb-doped Zn4Sb3 compounds, (Zn1–xNbx)4Sb3 (x = 0, 0.005, and 0.01), were investigated at temperatures ranging from 300 to 685 K. The results showed that by substituting Zn with Nb, the thermal conductivities of all the Nb-doped compounds were lower than that of the pristine β-Zn4Sb3. Among the compounds studied, the lightly substituted (Zn0.995Nb0.005)4Sb3 compound exhibited the best thermoelectric performance due to the improvement in both its electrical resistivity and thermal conductivity. Its figure of merit, ZT, was greater than the undoped Zn4Sb3 compound for the temperature range investigated. In particular, the ZT of (Zn0.995Nb0.005)4Sb3 reached a value of 1.1 at 680 K, which was 69% greater than that of the undoped Zn4Sb3 obtained in this study.

Ultra-low thermal conductivity and high thermoelectric performance realized in a Cu3SbSe4 based system

2021 ◽  
Vol 5 (1) ◽  
pp. 324-332
Author(s):  
J. M. Li ◽  
H. W. Ming ◽  
B. L. Zhang ◽  
C. J. Song ◽  
L. Wang ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Thermoelectric Properties ◽  
Thermoelectric Performance ◽  
Low Thermal Conductivity ◽  
Sn Doping ◽  
Temperature Range ◽  
System P

Cu3SbSe4-Based materials were fabricated through Sn-doping and AgSb0.98Ge0.02Se2 incorporation and their thermoelectric properties were investigated in the temperature range from 300 K to 675 K.

scholarly journals Outstanding thermoelectric properties of solvothermal-synthesized Sn1−3xInxAg2xTe micro-crystals through defect engineering and band tuning

2020 ◽  
Vol 8 (7) ◽  
pp. 3978-3987 ◽  
Author(s):  
Raza Moshwan ◽  
Wei-Di Liu ◽  
Xiao-Lei Shi ◽  
Qiang Sun ◽  
Han Gao ◽  
...  
Keyword(s):  
Synergistic Effect ◽  
Transport Properties ◽  
Valence Band ◽  
Thermoelectric Properties ◽  
Electrical Transport ◽  
Energy Levels ◽  
Resonance Energy ◽  
Defect Engineering ◽  
Electrical Transport Properties ◽  
Co Doping

In eco-friendly SnTe thermoelectrics, In and Ag co-doping induces the synergistic effect of resonance energy levels and valence band convergence to enhance its electrical transport properties, while defects ameliorates its thermal transport.

Enhanced thermoelectric performance of BiSbTe-based composites incorporated with amorphous Si3N4 nanoparticles

RSC Advances ◽  
2015 ◽  
Vol 5 (43) ◽  
pp. 34251-34256 ◽  
Author(s):  
Y. C. Dou ◽  
X. Y. Qin ◽  
D. Li ◽  
Y. Y. Li ◽  
H. X. Xin ◽  
...  
Keyword(s):  
Thermoelectric Properties ◽  
Thermoelectric Performance ◽  
Temperature Range ◽  
Amorphous Si ◽  
Amorphous Si3n4

Thermoelectric properties of BiSbTe-based composites dispersed with a small amount (<1 vol%) of amorphous Si3N4 (a-Si3N4) nanoparticles (∼25 nm) were investigated in the temperature range from 303 K to 483 K.

Electrical-Transport Properties of Hydrated and Anhydrous Vanadyl Phosphate in the Temperature Range 20−200 °C

1996 ◽  
Vol 8 (10) ◽  
pp. 2505-2509 ◽  
Author(s):  
V. Zima ◽  
M. Vlček ◽  
L. Beneš ◽  
M. Casciola ◽  
L. Massinelli ◽  
...  
Keyword(s):  
Transport Properties ◽  
Electrical Transport ◽  
Vanadyl Phosphate ◽  
Electrical Transport Properties ◽  
Temperature Range

scholarly journals The Undoped Polycrystalline Diamond Film—Electrical Transport Properties

Sensors ◽  
2021 ◽  
Vol 21 (18) ◽  
pp. 6113
Author(s):  
Szymon Łoś ◽  
Kazimierz Fabisiak ◽  
Kazimierz Paprocki ◽  
Mirosław Szybowicz ◽  
Anna Dychalska
Keyword(s):  
Transport Properties ◽  
Electrical Transport ◽  
Diamond Films ◽  
Polycrystalline Diamond ◽  
Localized States ◽  
X Ray Diffraction ◽  
Electrical Transport Properties ◽  
Temperature Range ◽  
Hot Filament ◽  
Si Wafer

The polycrystalline diamonds were synthesized on n-type single crystalline Si wafer by Hot Filament CVD method. The structural properties of the obtained diamond films were checked by X-ray diffraction and Raman spectroscopy. The conductivity of n-Si/p-diamond, sandwiched between two electrodes, was measured in the temperature range of 90–300 K in a closed cycle cryostat under vacuum. In the temperature range of (200–300 K), the experimental data of the conductivity were used to obtain the activation energies Ea which comes out to be in the range of 60–228 meV. In the low temperature region i.e., below 200 K, the conductivity increases very slowly with temperature, which indicates that the conduction occurs via Mott variable range hopping in the localized states near Fermi level. The densities of localized states in diamond films were calculated using Mott’s model and were found to be in the range of 9×1013 to 5×1014eV−1cm−3 depending on the diamond’s surface hydrogenation level. The Mott’s model allowed estimating primal parameters like average hopping range and hopping energy. It has been shown that the surface hydrogenation may play a crucial role in tuning transport properties.

Effects of Sb-doping on electrical transport properties of Co-based half-Heusler compound

2003 ◽  
Vol 793 ◽  
Author(s):  
Yasuhiro Ono ◽  
Shingo Inayama ◽  
Hideaki Adachi ◽  
Satoshi Yotsuhashi ◽  
Yuzuru Miyazaki ◽  
...  
Keyword(s):  
Transport Properties ◽  
Electrical Transport ◽  
Measured Temperature ◽  
Electrical Transport Properties ◽  
Indirect Transition ◽  
Metallic Behavior ◽  
Heusler Compound ◽  
Temperature Range ◽  
Seebeck Coefficients ◽  
Sb Doping

ABSTRACTElectrical transport properties of NbCoSn1−xSbx (x =0, 0.01, 0.02 and 0.05), a half-Heusler compound and its alloys, have been studied in the temperature range from 80 K to 850 K. As-prepared samples exhibit metallic conduction and similar Seebeck coefficients near 300 K (S = –100 μVK−1). Except for NbCoSn0.95Sn0.05, both electrical resistivity, ρ, and the absolute value of S appreciably increase during the annealing for 6 days at 1123 K. Unusual increase in ρ of the annealed NbCoSn sample is found at about 200 K. ρ-T curves of the other annealed samples remain metallic over the measured temperature range and the ρ value noticeably decreases with increasing Sb content, x. Among the annealed samples, the high power factor, 25×10−4 Wm−1K−2 at 850 K, is obtained for NbCoSn0.95Sb0.05. The band structure of NbCoSn is calculated based on the determined crystal structure, indicating that NbCoSn is an indirect transition-type semiconductor with a band gap of approximately 1 eV. This is not consistent with the metallic behavior of ρ observed for the annealed NbCoSn sample above 400 K. Partial disordering of Nb and Co atoms is a conceivable answer.

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