Enhanced Electrical Transport Properties via Defect Control for Screen-Printed Bi2Te3 Films over a Wide Temperature Range

2020 ◽  
Vol 12 (14) ◽  
pp. 16630-16638 ◽  
Author(s):  
Jingjing Feng ◽  
Wei Zhu ◽  
Zhiwei Zhang ◽  
Lili Cao ◽  
Yuedong Yu ◽  
...  
Keyword(s):  
Transport Properties ◽  
Wide Temperature Range ◽  
Electrical Transport ◽  
Electrical Transport Properties ◽  
Temperature Range ◽  
Defect Control ◽  
Screen Printed

Electrical transport properties of Au/SiO2/n-GaN MIS structure in a wide temperature range

2012 ◽  
Vol 12 (3) ◽  
pp. 765-772 ◽  
Author(s):  
B. Prasanna Lakshmi ◽  
M. Siva Pratap Reddy ◽  
A. Ashok Kumar ◽  
V. Rajagopal Reddy
Keyword(s):  
Transport Properties ◽  
Wide Temperature Range ◽  
Electrical Transport ◽  
Mis Structure ◽  
Electrical Transport Properties ◽  
Temperature Range

Electrical-Transport Properties of Hydrated and Anhydrous Vanadyl Phosphate in the Temperature Range 20−200 °C

1996 ◽  
Vol 8 (10) ◽  
pp. 2505-2509 ◽  
Author(s):  
V. Zima ◽  
M. Vlček ◽  
L. Beneš ◽  
M. Casciola ◽  
L. Massinelli ◽  
...  
Keyword(s):  
Transport Properties ◽  
Electrical Transport ◽  
Vanadyl Phosphate ◽  
Electrical Transport Properties ◽  
Temperature Range

scholarly journals The Undoped Polycrystalline Diamond Film—Electrical Transport Properties

Sensors ◽  
2021 ◽  
Vol 21 (18) ◽  
pp. 6113
Author(s):  
Szymon Łoś ◽  
Kazimierz Fabisiak ◽  
Kazimierz Paprocki ◽  
Mirosław Szybowicz ◽  
Anna Dychalska
Keyword(s):  
Transport Properties ◽  
Electrical Transport ◽  
Diamond Films ◽  
Polycrystalline Diamond ◽  
Localized States ◽  
X Ray Diffraction ◽  
Electrical Transport Properties ◽  
Temperature Range ◽  
Hot Filament ◽  
Si Wafer

The polycrystalline diamonds were synthesized on n-type single crystalline Si wafer by Hot Filament CVD method. The structural properties of the obtained diamond films were checked by X-ray diffraction and Raman spectroscopy. The conductivity of n-Si/p-diamond, sandwiched between two electrodes, was measured in the temperature range of 90–300 K in a closed cycle cryostat under vacuum. In the temperature range of (200–300 K), the experimental data of the conductivity were used to obtain the activation energies Ea which comes out to be in the range of 60–228 meV. In the low temperature region i.e., below 200 K, the conductivity increases very slowly with temperature, which indicates that the conduction occurs via Mott variable range hopping in the localized states near Fermi level. The densities of localized states in diamond films were calculated using Mott’s model and were found to be in the range of 9×1013 to 5×1014eV−1cm−3 depending on the diamond’s surface hydrogenation level. The Mott’s model allowed estimating primal parameters like average hopping range and hopping energy. It has been shown that the surface hydrogenation may play a crucial role in tuning transport properties.

Effects of Sb-doping on electrical transport properties of Co-based half-Heusler compound

2003 ◽  
Vol 793 ◽  
Author(s):  
Yasuhiro Ono ◽  
Shingo Inayama ◽  
Hideaki Adachi ◽  
Satoshi Yotsuhashi ◽  
Yuzuru Miyazaki ◽  
...  
Keyword(s):  
Transport Properties ◽  
Electrical Transport ◽  
Measured Temperature ◽  
Electrical Transport Properties ◽  
Indirect Transition ◽  
Metallic Behavior ◽  
Heusler Compound ◽  
Temperature Range ◽  
Seebeck Coefficients ◽  
Sb Doping

ABSTRACTElectrical transport properties of NbCoSn1−xSbx (x =0, 0.01, 0.02 and 0.05), a half-Heusler compound and its alloys, have been studied in the temperature range from 80 K to 850 K. As-prepared samples exhibit metallic conduction and similar Seebeck coefficients near 300 K (S = –100 μVK−1). Except for NbCoSn0.95Sn0.05, both electrical resistivity, ρ, and the absolute value of S appreciably increase during the annealing for 6 days at 1123 K. Unusual increase in ρ of the annealed NbCoSn sample is found at about 200 K. ρ-T curves of the other annealed samples remain metallic over the measured temperature range and the ρ value noticeably decreases with increasing Sb content, x. Among the annealed samples, the high power factor, 25×10−4 Wm−1K−2 at 850 K, is obtained for NbCoSn0.95Sb0.05. The band structure of NbCoSn is calculated based on the determined crystal structure, indicating that NbCoSn is an indirect transition-type semiconductor with a band gap of approximately 1 eV. This is not consistent with the metallic behavior of ρ observed for the annealed NbCoSn sample above 400 K. Partial disordering of Nb and Co atoms is a conceivable answer.

ELECTRICAL TRANSPORT PROPERTIES OF SOME METALLIC GLASSES

1993 ◽  
Vol 07 (20) ◽  
pp. 1295-1299 ◽  
Author(s):  
P. VENUGOPAL REDDY ◽  
S. SHEKHAR ◽  
Y. PURUSHOTHAM
Keyword(s):  
Electrical Resistivity ◽  
Transport Properties ◽  
Thermoelectric Power ◽  
Temperature Variation ◽  
Metallic Glasses ◽  
Electrical Transport ◽  
Electrical Transport Properties ◽  
Temperature Range ◽  
Increasing Temperature

Electrical resistivity and thermoelectric power of glassy ribbons having compositions Fe 81 B 13.5 Si 3.5 C 2, Fe 67 Co 18 B 14 Si 1, Fe 39 Ni 39 Mo 4 Si 6 B 12, and Co 53 Ni 25 Fe 5 Si 11 B 6 have been studied over a temperature range of 300–750 K. The electrical transport properties of these materials are found to increase with increasing temperature, and their temperature variation has been explained on the basis of Ziman's theory.

scholarly journals Gold Nanoparticle-Mediated Noncovalent Functionalization of Graphene for Field-Effect Transistor

2021 ◽  
Author(s):  
Dongha Shin ◽  
Hwa Rang Kim ◽  
Byung Hee Hong
Keyword(s):  
Transport Properties ◽  
Gold Nanoparticle ◽  
Electrical Transport ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Electrical Transport Properties ◽  
Noncovalent Functionalization ◽  
Effect Transistor

Since of its first discovery, graphene has attracted much attention because of the unique electrical transport properties that can be applied to high-performance field-effect transistor (FET). However, mounting chemical functionalities...

scholarly journals Pressure-Induced Structural Phase Transition and Metallization in Ga2Se3 up to 40.2 GPa under Non-Hydrostatic and Hydrostatic Environments

Crystals ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 746
Author(s):  
Meiling Hong ◽  
Lidong Dai ◽  
Haiying Hu ◽  
Xinyu Zhang
Keyword(s):  
Phase Transition ◽  
Electrical Conductivity ◽  
High Pressure ◽  
Phase Transformation ◽  
Transport Properties ◽  
Electrical Transport ◽  
Structural Phase ◽  
Structure Evolution ◽  
Systematic Research ◽  
Electrical Transport Properties

A series of investigations on the structural, vibrational, and electrical transport characterizations for Ga2Se3 were conducted up to 40.2 GPa under different hydrostatic environments by virtue of Raman scattering, electrical conductivity, high-resolution transmission electron microscopy, and atomic force microscopy. Upon compression, Ga2Se3 underwent a phase transformation from the zinc-blende to NaCl-type structure at 10.6 GPa under non-hydrostatic conditions, which was manifested by the disappearance of an A mode and the noticeable discontinuities in the pressure-dependent Raman full width at half maximum (FWHMs) and electrical conductivity. Further increasing the pressure to 18.8 GPa, the semiconductor-to-metal phase transition occurred in Ga2Se3, which was evidenced by the high-pressure variable-temperature electrical conductivity measurements. However, the higher structural transition pressure point of 13.2 GPa was detected for Ga2Se3 under hydrostatic conditions, which was possibly related to the protective influence of the pressure medium. Upon decompression, the phase transformation and metallization were found to be reversible but existed in the large pressure hysteresis effect under different hydrostatic environments. Systematic research on the high-pressure structural and electrical transport properties for Ga2Se3 would be helpful to further explore the crystal structure evolution and electrical transport properties for other A2B3-type compounds.

Sign in / Sign up

Export Citation Format

Share Document