scholarly journals Correction: Controllable poly-crystalline bilayered and multilayered graphene film growth by reciprocal chemical vapor deposition

Nanoscale ◽  
2015 ◽  
Vol 7 (28) ◽  
pp. 12225-12225 ◽  
Author(s):  
Qinke Wu ◽  
Seong Jun Jung ◽  
Sung Kyu Jang ◽  
Joohyun Lee ◽  
Insu Jeon ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Film Growth ◽  
Graphene Film ◽  
Chemical Vapor

Controllable poly-crystalline bilayered and multilayered graphene film growth by reciprocal chemical vapor deposition

Nanoscale ◽  
2015 ◽  
Vol 7 (23) ◽  
pp. 10357-10361 ◽  
Author(s):  
Qinke Wu ◽  
Seong Jun Jung ◽  
Sung Kyu Jang ◽  
Joohyun Lee ◽  
Insu Jeon ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Film Growth ◽  
Graphene Film ◽  
Chemical Vapor ◽  
Bilayer Graphene ◽  
Selective Growth ◽  
Layer Graphene

We report the selective growth of multi-layer graphene or a bilayer graphene film by reciprocal chemical vapor deposition.

scholarly journals Research on the Preparation and Spectral Characteristics of Graphene/TMDs Hetero-structures

2020 ◽  
Vol 15 (1) ◽  
Author(s):  
Tao Han ◽  
Hongxia Liu ◽  
Shulong Wang ◽  
Shupeng Chen ◽  
Kun Yang
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Spectral Characteristics ◽  
Graphene Film ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
Si Substrate ◽  
Broadband Absorption ◽  
Gate Effect ◽  
Pressure Chemical

AbstractThe Van der Waals (vdWs) hetero-structures consist of two-dimensional materials have received extensive attention, which is due to its attractive electrical and optoelectronic properties. In this paper, the high-quality large-size graphene film was first prepared by the chemical vapor deposition (CVD) method; then, graphene film was transferred to SiO2/Si substrate; next, the graphene/WS2 and graphene/MoS2 hetero-structures were prepared by the atmospheric pressure chemical vapor deposition method, which can be achieved by directly growing WS2 and MoS2 material on graphene/SiO2/Si substrate. Finally, the test characterization of graphene/TMDs hetero-structures was performed by AFM, SEM, EDX, Raman and PL spectroscopy to obtain and grasp the morphology and luminescence laws. The test results show that graphene/TMDs vdWs hetero-structures have the very excellent film quality and spectral characteristics. There is the built-in electric field at the interface of graphene/TMDs heterojunction, which can lead to the effective separation of photo-generated electron–hole pairs. Monolayer WS2 and MoS2 material have the strong broadband absorption capabilities, the photo-generated electrons from WS2 can transfer to the underlying p-type graphene when graphene/WS2 hetero-structures material is exposed to the light, and the remaining holes can induced the light gate effect, which is contrast to the ordinary semiconductor photoconductors. The research on spectral characteristics of graphene/TMDs hetero-structures can pave the way for the application of novel optoelectronic devices.

Heteroepitaxial growth of 3C–SiC film on Si(100) substrate by plasma chemical vapor deposition using monomethylsilane

2007 ◽  
Vol 22 (5) ◽  
pp. 1275-1280 ◽  
Author(s):  
Y. Morikawa ◽  
M. Hirai ◽  
A. Ohi ◽  
M. Kusaka ◽  
M. Iwami
Keyword(s):  
Chemical Vapor Deposition ◽  
Substrate Temperature ◽  
Single Molecule ◽  
Vapor Deposition ◽  
Film Growth ◽  
Chemical Vapor ◽  
Heteroepitaxial Growth ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Sic Film

We have studied the heteroepitaxial growth of 3C–SiC film on an Si(100) substrate by plasma chemical vapor deposition using monomethylsilane, a single-molecule gas containing both Si and C atoms. We have tried to introduce an interval process, in which we decrease the substrate temperature for a few minutes at a suitable stage of film growth. It was expected that, during the interval process, stabilization such as desorption of nonreacted precursors and lateral diffusion of species produced at the initial stage of film growth would occur. From the results, it appears that the interval process using a substrate temperature of 800 °C effectively suppresses polycrystallization of 3C–SiC growth on the Si(100) surface

Film Growth Mechanism of Photo-Chemical Vapor Deposition

1987 ◽  
Vol 105 ◽  
Author(s):  
T. Inushima ◽  
N. Hirose ◽  
K. Urata ◽  
K. Ito ◽  
S. Yamazaki
Keyword(s):  
Chemical Vapor Deposition ◽  
Growth Mechanism ◽  
Vapor Deposition ◽  
Decay Constant ◽  
Film Growth ◽  
Chemical Vapor ◽  
Active Species ◽  
Surface Migration ◽  
Show Temperature Dependence ◽  
Substrate Size

AbstractThe photo-chemical vapor deposition (CVD) of SiO2 and SiN2 were investigated using 185 nm light of a low pressure mercury lamp. The film thickness deposited on the substrate was the function of the distance from the substrate to the light source and its relation was investigated by changing the reaction pressure. From these investigations, the space migration length of the active species was estimated, which was, at the processing pressure of 400 Pa, about 10–20 mm. This migration length was confirmed by a model calculation. The step coverage of the film was investigated by the use of a two-dimensional capillary cavity. It was shown that the thickness decayed exponentially with the depth in the cavity. The decay constant did not show temperature dependence. From this result, the surface migration of the active species produced by photo-CVD was reported. To confirm this migration we presented a substrate- size effect of photo-CVD, which became obvious when the substrate size became smaller than the space migration length of the active species. From these results, the film growth mechanism of photo-CVD was discussed.

Selectively Aligned Polymer Film Growth on Obliquely Evaporated SiO2Pattern by Chemical Vapor Deposition

1992 ◽  
Vol 31 (Part 2, No. 7B) ◽  
pp. L980-L982 ◽  
Author(s):  
Tetsuzo Yoshimura ◽  
Katsusada Motoyoshi ◽  
Satoshi Tatsuura ◽  
Wataru Sotoyama ◽  
Azuma Matsuura ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Polymer Film ◽  
Vapor Deposition ◽  
Film Growth ◽  
Chemical Vapor
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