scholarly journals Silicon monoxide – a convenient precursor for large scale synthesis of near infrared emitting monodisperse silicon nanocrystals

Nanoscale ◽  
2016 ◽  
Vol 8 (6) ◽  
pp. 3678-3684 ◽  
Author(s):  
Wei Sun ◽  
Chenxi Qian ◽  
Xiao Sherri Cui ◽  
Liwei Wang ◽  
Muan Wei ◽  
...  
Keyword(s):  
Size Effects ◽  
Thermal Processing ◽  
Silicon Nanocrystals ◽  
Large Scale ◽  
Near Infrared ◽  
Silicon Monoxide ◽  
Quantum Size Effects ◽  
Quantum Size ◽  
Convenient Synthesis ◽  
Depth Study

The in-depth study of a convenient synthesis of NIR-emitting ncSi, requiring only thermal processing of commercial SiO. The size separation enabled the study of quantum size effects, pinpointing the most efficient PL wavelength.

Size-dependent Reactivity in the Functionalization of Nanostructured Silicon Surfaces

2011 ◽  
Vol 1359 ◽  
Author(s):  
Joel A. Kelly ◽  
Amber M. Shukaliak ◽  
Michael D. Fleischauer ◽  
Jonathan G.C. Veinot
Keyword(s):  
Size Effects ◽  
Silicon Nanocrystals ◽  
Detailed Comparison ◽  
Visible Spectral Region ◽  
Silicon Surfaces ◽  
Quantum Size Effects ◽  
Size Dependent ◽  
Quantum Size ◽  
Near Ir ◽  
Nanostructured Silicon

ABSTRACTThe reactivity of silicon nanocrystals (Si-NCs) in near-UV photochemical hydrosilylation was evaluated as a function of size. Results show that Si-NCs with photoluminescence (PL) in the visible spectral region react faster than Si-NCs with near-IR PL. Fourier-transform infrared (FTIR) spectroscopy suggests this difference in reactivity is due to quantum size effects in the exciton-mediated mechanism proposed for this reaction. We have carried out a detailed comparison of Si-NC reactivity in photochemical and thermal hydrosilylation and determined the conditions under which Si-NCs may be size-selected based on their reactivity.

Switching-On Quantum Size Effects in Silicon Nanocrystals

2014 ◽  
Vol 27 (4) ◽  
pp. 746-749 ◽  
Author(s):  
Wei Sun ◽  
Chenxi Qian ◽  
Liwei Wang ◽  
Muan Wei ◽  
Melanie L. Mastronardi ◽  
...  
Keyword(s):  
Size Effects ◽  
Silicon Nanocrystals ◽  
Quantum Size Effects ◽  
Quantum Size

Search for quantum size effects in ultrathin epitaxial metallic films

1991 ◽  
Vol 16 (6) ◽  
pp. 623-638 ◽  
Author(s):  
P.A. Badoz ◽  
F. Arnaud d'Avitaya ◽  
E. Rosencher
Keyword(s):  
Size Effects ◽  
Quantum Size Effects ◽  
Metallic Films ◽  
Quantum Size

QUANTUM-SIZE EFFECTS ON THE OPTICAL PROPERTIES OF SMALL PARTICLES

1983 ◽  
Vol 44 (C10) ◽  
pp. C10-375-C10-378 ◽  
Author(s):  
P. Ahlqvist ◽  
P. de Andrés ◽  
R. Monreal ◽  
F. Flores
Keyword(s):  
Optical Properties ◽  
Size Effects ◽  
Quantum Size Effects ◽  
Small Particles ◽  
Quantum Size

Quantum size effects in semiconducting and semimetallic films

1968 ◽  
Vol 96 (9) ◽  
pp. 61-86 ◽  
Author(s):  
B.A. Tavger ◽  
V.Ya. Demikhovskii
Keyword(s):  
Size Effects ◽  
Quantum Size Effects ◽  
Quantum Size

Quantum size effects for the extraordinary Hall effect in thin magnetic films

1997 ◽  
Vol 229 (6) ◽  
pp. 401-405 ◽  
Author(s):  
A. Crépieux ◽  
C. Lacroix ◽  
N. Ryzhanova ◽  
A. Vedyayev
Keyword(s):  
Hall Effect ◽  
Size Effects ◽  
Magnetic Films ◽  
Quantum Size Effects ◽  
Quantum Size ◽  
Thin Magnetic Films ◽  
Extraordinary Hall Effect

Thermoelectric power in very thin film thermocouples: Quantum size effects

2006 ◽  
Vol 100 (11) ◽  
pp. 114905 ◽  
Author(s):  
M. Cattani ◽  
M. C. Salvadori ◽  
A. R. Vaz ◽  
F. S. Teixeira ◽  
I. G. Brown
Keyword(s):  
Thin Film ◽  
Thermoelectric Power ◽  
Size Effects ◽  
Quantum Size Effects ◽  
Quantum Size ◽  
Thin Film Thermocouples

Quantum size effects in nanocrystalline semiconducting titania layers prepared by anodic oxidative hydrolysis of titanium trichloride

1993 ◽  
Vol 97 (37) ◽  
pp. 9493-9498 ◽  
Author(s):  
Ladislav Kavan ◽  
Tiziana Stoto ◽  
Michael Graetzel ◽  
Donald Fitzmaurice ◽  
Valery Shklover
Keyword(s):  
Size Effects ◽  
Quantum Size Effects ◽  
Quantum Size ◽  
Titanium Trichloride ◽  
Hydrolysis Of

Quantum Confinement Effects on the Dielectric Constant of Porous Silicon

1992 ◽  
Vol 283 ◽  
Author(s):  
R. Tsu ◽  
L. Ioriatti ◽  
J. F. Harvey ◽  
H. Shen ◽  
R. A. Lux
Keyword(s):  
Dielectric Constant ◽  
Porous Silicon ◽  
Size Effects ◽  
Quantum Confinement ◽  
Electrochemical Etching ◽  
Index Of Refraction ◽  
Quantum Size Effects ◽  
Quantum Size ◽  
Quantum Confinement Effects ◽  
Shallow Impurities

ABSTRACTThe reduction of the dielectric constant due to quantum confinement is studied both experimentally and theoretically. Angle resolved ellipsometry measurements with Ar- and He-Ne-lasers give values for the index of refraction far below what can be accounted for from porosity alone. A modified Penn model to include quantum size effects has been used to calculate the reduction in the static dielectric constant (ε) with extreme confinement. Since the binding energy of shallow impurities depends inversely on ε2, the drastic decrease in the carrier concentration as a result of the decrease in ε leads to a self-limiting process for the electrochemical etching of porous silicon.

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