A non-destructive n-doping method for graphene with precise control of electronic properties via atomic layer deposition

Nanoscale ◽  
2016 ◽  
Vol 8 (9) ◽  
pp. 5000-5005 ◽  
Author(s):  
Kyu Seok Han ◽  
Pranav Y. Kalode ◽  
Yong-Eun Koo Lee ◽  
Hongbum Kim ◽  
Lynn Lee ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Electronic Properties ◽  
Atomic Layer ◽  
Precise Control ◽  
Layer Deposition ◽  
N Doping ◽  
Non Destructive

scholarly journals Tuning electronic properties in LaNiO3 thin films by B-site Cu-substitution

2020 ◽  
Vol 8 (36) ◽  
pp. 12662-12668
Author(s):  
Henrik H. Sønsteby ◽  
Erik Skaar ◽  
Jon E. Bratvold ◽  
John W. Freeland ◽  
Angel Yanguas-Gil ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Electronic Properties ◽  
Room Temperature ◽  
Atomic Layer ◽  
Transition Temperatures ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Cu Substitution ◽  
Layer Deposition

Cu-Substitution in LaNiO3 by atomic layer deposition provides films spanning six orders of magnitude in resistivity, with metal insulator transition temperatures from 0 K to room temperature.

scholarly journals Adjusting Interfacial Chemistry and Electronic Properties of Photovoltaics Based on a Highly Pure Sb2S3 Absorber by Atomic Layer Deposition

2019 ◽  
Vol 2 (12) ◽  
pp. 8747-8756 ◽  
Author(s):  
Pascal Büttner ◽  
Florian Scheler ◽  
Craig Pointer ◽  
Dirk Döhler ◽  
Maïssa K. S. Barr ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Electronic Properties ◽  
Atomic Layer ◽  
Interfacial Chemistry ◽  
Layer Deposition

Controlling the electronic properties of SWCNT FETs via modification of the substrate surface prior to atomic layer deposition of 10 nm thick Al2O3film

2013 ◽  
Vol 24 (45) ◽  
pp. 455701
Author(s):  
Joonsung Kim ◽  
Jangyeol Yoon ◽  
Junhong Na ◽  
Seongmin Yee ◽  
Gyu Tae Kim ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Electronic Properties ◽  
Substrate Surface ◽  
Atomic Layer ◽  
Layer Deposition

scholarly journals Electronic Properties of Thin HfO2Films Fabricated by Atomic Layer Deposition on 4H-SiC

2011 ◽  
Vol 119 (5) ◽  
pp. 696-698 ◽  
Author(s):  
A. Taube ◽  
S. Gierałtowska ◽  
T. Gutt ◽  
T. Małachowski ◽  
I. Pasternak ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Electronic Properties ◽  
Atomic Layer ◽  
Layer Deposition

scholarly journals Electronic Properties of Stacked ZrO2 Films Fabricated by Atomic Layer Deposition on 4H-SiC

2017 ◽  
Vol 132 (2) ◽  
pp. 329-331
Author(s):  
K. Król ◽  
N. Kwietniewski ◽  
S. Gierałtowska ◽  
Ł. Wachnicki ◽  
M. Sochacki
Keyword(s):  
Atomic Layer Deposition ◽  
Electronic Properties ◽  
Atomic Layer ◽  
Layer Deposition

Non-destructive functionalisation for atomic layer deposition of metal oxides on carbon nanotubes: effect of linking agents and defects

Nanoscale ◽  
2015 ◽  
Vol 7 (7) ◽  
pp. 3028-3034 ◽  
Author(s):  
N. Kemnade ◽  
C. J. Shearer ◽  
D. J. Dieterle ◽  
A. S. Cherevan ◽  
P. Gebhardt ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Atomic Layer Deposition ◽  
Metal Oxides ◽  
Sustainable Energy ◽  
Functional Materials ◽  
Atomic Layer ◽  
Energy Applications ◽  
New Class ◽  
Layer Deposition ◽  
Non Destructive

The hybridisation of metal oxides and nanocarbons has created a promising new class of functional materials for environmental and sustainable energy applications.

Homogenous Thin Films Prepared on Microchannel Plates via Atomic Layer Deposition

2015 ◽  
Vol 1096 ◽  
pp. 93-97
Author(s):  
Bao Jun Yan ◽  
Shu Lin Liu ◽  
Lu Ping Yang
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Aluminum Oxide ◽  
Atomic Layer ◽  
Good Method ◽  
Element Distribution ◽  
Oxide Thin Films ◽  
X Ray ◽  
Precise Control ◽  
Layer Deposition

Oxide thin films such as aluminum oxide doped with zinc (AZO), and aluminum oxide (Al2O3) were prepared in the pores of microchannel plate (MCP) by atomic layer deposition (ALD), which is a precise control thin film thickness on substrate with high aspect ratio structure. In this paper, homogenous oxide thin films deposited on varied substrates were prepared by ALD technology under different conditions, and the morphology, element distribution and structure of deposited samples are systematically investigated by scanning electron microscopy (SEM), energy dispersive x-ray (EDX), and x-ray diffraction (XRD) respectively, The results show that ALD technique is a good method to grow homogenous thin films on MCP.

Chemical Vapor Deposition of Ti-Si-N Films with Alternating Source Supply

1999 ◽  
Vol 564 ◽  
Author(s):  
Jae-Sik Min ◽  
Hyung-Sang Park ◽  
Wonyong Koh ◽  
Sang-Won Kang
Keyword(s):  
Atomic Layer Deposition ◽  
Film Growth ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Precise Control ◽  
Silicon Nitride Films ◽  
Layer Deposition ◽  
Si Content ◽  
Titanium Silicon Nitride ◽  
Titanium Silicon

AbstractTitanium-silicon-nitride films were grown by atomic layer deposition using an alternating supply of tetrakis(dimethylamido)titanium (TDMAT), silane. and ammonia, at substrate temperature of 180°C. The supply of a reactant was followed by a purge with inert gas before introducing another reactant onto the substrate in order to prevent gas-phase reactions. In one set of experiments the reactants were supplied separately in the sequence of TDMAT. silane. and ammonia. The Si content of the films remained constant at 18 at.%. and the film growth rate varied little from 0.24 nm per reactant-supply-cycle, even though silane partial pressure varied from 0.002 to 0.1 torr. In the other set of experiments silane and ammonia were simultaneously supplied in the sequence of TDMAT and silane/ammonia. The Si content varied from 3 to 23 at.% as the silane-to-ammonia ratio varied from 0.01 to 10. Atomic layer deposition of Ti-Si-N films allows the precise control of Si content as well as film thickness.

scholarly journals Enhancement in Photoelectrochemical Performance of Optimized Amorphous SnS2 Thin Film Fabricated through Atomic Layer Deposition

Nanomaterials ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 1083 ◽  
Author(s):  
Weiguang Hu ◽  
Truong Thi Hien ◽  
Dojin Kim ◽  
Hyo Sik Chang
Keyword(s):  
Atomic Layer Deposition ◽  
Close Contact ◽  
Saturated Calomel Electrode ◽  
Atomic Layer ◽  
Photocurrent Density ◽  
Photoelectrochemical Performance ◽  
Precise Control ◽  
Tin Disulfide ◽  
Layer Deposition ◽  
Application Requirements

Two-dimensional (2D) nanomaterials have distinct optical and electrical properties owing to their unique structures. In this study, smooth 2D amorphous tin disulfide (SnS2) films were fabricated by atomic layer deposition (ALD), and applied for the first time to photoelectrochemical water splitting. The optimal stable photocurrent density of the 50-nm-thick amorphous SnS2 film fabricated at 140 °C was 51.5 µA/cm2 at an oxygen evolution reaction (0.8 V vs. saturated calomel electrode (SCE)). This value is better than those of most polycrystalline SnS2 films reported in recent years. These results are attributed mainly to adjustable optical band gap in the range of 2.80 to 2.52 eV, precise control of the film thickness at the nanoscale, and the close contact between the prepared SnS2 film and substrate. Subsequently, the photoelectron separation mechanisms of the amorphous, monocrystalline, and polycrystalline SnS2 films are discussed. Considering above advantages, the ALD amorphous SnS2 film can be designed and fabricated according to the application requirements.

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