Electromechanical coupling and design considerations in single-layer MoS2 suspended-channel transistors and resonators

Nanoscale ◽  
2015 ◽  
Vol 7 (47) ◽  
pp. 19921-19929 ◽  
Author(s):  
Rui Yang ◽  
Arnob Islam ◽  
Philip X.-L. Feng

We describe systematic investigation of electromechanical coupling effects in suspended single-layer MoS2, as suspended-channel field-effect transistors and vibrating-channel nanoelectromechanical resonators.

Author(s):  
Jiao Yu ◽  
Caijuan Xia ◽  
Zhengyang Hu ◽  
jianping Sun ◽  
Xiaopeng Hao ◽  
...  

With in-plane heterojunction contacts between semiconducting 2H phase (as channel) and the metallic 1T' phase (as electrode), the two-dimensional (2D) transition metal chalcogenides (TMDs) field-effect transistors (FETs) have received much...


2012 ◽  
Vol 24 (20) ◽  
pp. 2728-2734 ◽  
Author(s):  
Michael C. Gwinner ◽  
Dinesh Kabra ◽  
Matthew Roberts ◽  
Thomas J. K. Brenner ◽  
Bodo H. Wallikewitz ◽  
...  

2014 ◽  
Vol 25 (4) ◽  
pp. 586-596 ◽  
Author(s):  
Dohyuk Yoo ◽  
Benjamin Nketia-Yawson ◽  
Seok-Ju Kang ◽  
Hyungju Ahn ◽  
Tae Joo Shin ◽  
...  

Nanoscale ◽  
2018 ◽  
Vol 10 (37) ◽  
pp. 17557-17566 ◽  
Author(s):  
HyunJeong Kim ◽  
WungYeon Kim ◽  
Maria O'Brien ◽  
Niall McEvoy ◽  
Chanyoung Yim ◽  
...  

High mobility, fully encapsulated field-effect transistors with non-covalently functionalised molybdenum disulfide (MoS2) channels grown by chemical vapour deposition are reported.


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