scholarly journals Non-exponential resistive switching in Ag2S memristors: a key to nanometer-scale non-volatile memory devices

Nanoscale ◽  
2015 ◽  
Vol 7 (10) ◽  
pp. 4394-4399 ◽  
Author(s):  
Agnes Gubicza ◽  
Miklós Csontos ◽  
András Halbritter ◽  
György Mihály
Keyword(s):  
Resistive Switching ◽  
Nanometer Scale ◽  
Memory Devices ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Memory Applications

The non-exponential dynamics of resistive switchings in Ag2S memristive nanojunctions provides an ideal basis for non-volatile memory applications.

Resistive switching characteristics of all-solution-based Ag/TiO2/Mo-doped In2O3devices for non-volatile memory applications

2016 ◽  
Vol 4 (46) ◽  
pp. 10967-10972 ◽  
Author(s):  
Sujaya Kumar Vishwanath ◽  
Jihoon Kim
Keyword(s):  
Resistive Switching ◽  
Retention Time ◽  
Elevated Temperatures ◽  
Switching Behavior ◽  
Memory Devices ◽  
Bipolar Switching ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Switching Characteristics ◽  
Memory Applications

The all-solution-based memory devices demonstrated excellent bipolar switching behavior with a high resistive switching ratio of 103, excellent endurance of more than 1000 cycles, stable retention time greater than 104s at elevated temperatures, and fast programming speed of 250 ns.

Resistive switching in high-k dielectrics for non-volatile memory applications

COMMAD 2012 ◽  
2012 ◽  
Author(s):  
R.G. Elliman ◽  
M.N. Saleh ◽  
D.K. Venkatachalam ◽  
T-H. Kim ◽  
K. Belay ◽  
...  
Keyword(s):  
Resistive Switching ◽  
High K ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Memory Applications

Resistive switching in CeO2/La0.8Sr0.2MnO3 bilayer for non-volatile memory applications

2015 ◽  
Vol 147 ◽  
pp. 37-40 ◽  
Author(s):  
R. Ortega-Hernandez ◽  
M. Coll ◽  
J. Gonzalez-Rosillo ◽  
A. Palau ◽  
X. Obradors ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Memory Applications

Human hair keratin for physically transient resistive switching memory devices

2019 ◽  
Vol 7 (11) ◽  
pp. 3315-3321 ◽  
Author(s):  
Qiqi Lin ◽  
Shilei Hao ◽  
Wei Hu ◽  
Ming Wang ◽  
Zhigang Zang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Human Hair ◽  
Memory Device ◽  
Memory Devices ◽  
Resistive Switching Memory ◽  
Switching Performance ◽  
Hair Keratin ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Switching Memory

A physically transient non-volatile memory device made of keratin exhibits great resistive switching performance.

Investigation of resistive switching in Cu-doped HfO2thin film for multilevel non-volatile memory applications

2009 ◽  
Vol 21 (4) ◽  
pp. 045202 ◽  
Author(s):  
Yan Wang ◽  
Qi Liu ◽  
Shibing Long ◽  
Wei Wang ◽  
Qin Wang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Memory Applications
Sign in / Sign up

Export Citation Format

Share Document