Resistive switching of Ag/In2O3/Pt heterostructures for non volatile memory applications

2012 ◽  
Author(s):  
Bhaumik V. Mistry ◽  
U. S. Joshi ◽  
R. Pinto
Keyword(s):  
Resistive Switching ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Memory Applications

Resistive switching characteristics of all-solution-based Ag/TiO2/Mo-doped In2O3devices for non-volatile memory applications

2016 ◽  
Vol 4 (46) ◽  
pp. 10967-10972 ◽  
Author(s):  
Sujaya Kumar Vishwanath ◽  
Jihoon Kim
Keyword(s):  
Resistive Switching ◽  
Retention Time ◽  
Elevated Temperatures ◽  
Switching Behavior ◽  
Memory Devices ◽  
Bipolar Switching ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Switching Characteristics ◽  
Memory Applications

The all-solution-based memory devices demonstrated excellent bipolar switching behavior with a high resistive switching ratio of 103, excellent endurance of more than 1000 cycles, stable retention time greater than 104s at elevated temperatures, and fast programming speed of 250 ns.

Resistive switching in high-k dielectrics for non-volatile memory applications

COMMAD 2012 ◽  
2012 ◽  
Author(s):  
R.G. Elliman ◽  
M.N. Saleh ◽  
D.K. Venkatachalam ◽  
T-H. Kim ◽  
K. Belay ◽  
...  
Keyword(s):  
Resistive Switching ◽  
High K ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Memory Applications

Resistive switching in CeO2/La0.8Sr0.2MnO3 bilayer for non-volatile memory applications

2015 ◽  
Vol 147 ◽  
pp. 37-40 ◽  
Author(s):  
R. Ortega-Hernandez ◽  
M. Coll ◽  
J. Gonzalez-Rosillo ◽  
A. Palau ◽  
X. Obradors ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Memory Applications

Investigation of resistive switching in Cu-doped HfO2thin film for multilevel non-volatile memory applications

2009 ◽  
Vol 21 (4) ◽  
pp. 045202 ◽  
Author(s):  
Yan Wang ◽  
Qi Liu ◽  
Shibing Long ◽  
Wei Wang ◽  
Qin Wang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Memory Applications

Investigation of resistive switching in graphite-like carbon thin film for non-volatile memory applications

Vacuum ◽  
2014 ◽  
Vol 107 ◽  
pp. 1-5 ◽  
Author(s):  
Bing Ren ◽  
Lin Wang ◽  
Linjun Wang ◽  
Jian Huang ◽  
Ke Tang ◽  
...  
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Carbon Thin Film ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Memory Applications

A persistently increasing resistance ratio and repeatable non-volatile memory in AZO/CZTSe/FTO resistive switching devices

2018 ◽  
Vol 11 (02) ◽  
pp. 1850023 ◽  
Author(s):  
Pingping Zheng ◽  
Xuejiao Zhang ◽  
Bai Sun ◽  
Shuangsuo Mao ◽  
Shouhui Zhu ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Sandwich Structure ◽  
Resistance Ratio ◽  
Resistive Switching Memory ◽  
Non Volatile Memory ◽  
Doped Zno ◽  
Volatile Memory ◽  
Memory Applications ◽  
First Time ◽  
Switching Memory

In this paper, the Cu2ZnSnSe4 (CZTSe) film was deposited on the fluorine-doped SnO2 (FTO), and Al-doped ZnO (AZO) and FTO act as top and bottom electrodes for constructing a sandwich structure, in which the AZO/CZTSe/FTO device not only represents outstanding non-volatile resistive switching memory behavior, but also shows a persistently increasing resistance ratio phenomenon for the first time. This work reveals that the device based on CZTSe film holds an excellent memory effect for non-volatile memory applications in the electronic equipment.

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