Exploring the high k dielectric behavior of bio-carbon reinforced cyanate ester nanocomposites

2015 ◽  
Vol 39 (11) ◽  
pp. 8739-8751 ◽  
Author(s):  
Prabunathan Pichaimani ◽  
Srinivasan Krishnan ◽  
Hariharan Arumugam ◽  
Alagar Muthukaruppan
Keyword(s):  
Dielectric Behavior ◽  
Cyanate Ester ◽  
Rice Husks ◽  
Embedded Capacitors ◽  
High K ◽  
High K Dielectric

Functionalized bio-carbon from rice husks is obtained and used to reinforce a cyanate ester matrix to achieve high k dielectric embedded capacitors.

Design of cyanate ester/azomethine/ZrO2nanocomposites high-k dielectric materials by single step sol-gel approach

2014 ◽  
Vol 131 (24) ◽  
pp. n/a-n/a ◽  
Author(s):  
Mathivathanan Ariraman ◽  
Ramachandran Sasi kumar ◽  
Muthukaruppan Alagar
Keyword(s):  
Sol Gel ◽  
Dielectric Materials ◽  
Single Step ◽  
Cyanate Ester ◽  
High K ◽  
High K Dielectric

Review on Preparation and Properties of High-K Dielectric Material Based on Lanthanum Doped Barium Titanate

2015 ◽  
Vol 819 ◽  
pp. 173-178 ◽  
Author(s):  
Nur Farahin Abdul Hamid ◽  
Rozana A.M. Osman ◽  
Mohd Sobri Idris ◽  
Mohd Rosydi Zakaria
Keyword(s):  
Barium Titanate ◽  
Dielectric Material ◽  
Ferroelectric Properties ◽  
Dielectric Behavior ◽  
Relaxor Ferroelectric ◽  
Preparation Methods ◽  
High K ◽  
Doped Barium Titanate ◽  
High K Dielectric ◽  
High Dielectric

Lanthanum doped barium titanate (BaTiO3) were studied for high-K dielectric and exhibit a relaxor ferroelectric properties and it can be prepared by using various method. Relaxor ferroelectric offers a wide temperature and frequency range of application for materials with high dielectric constant for microelectronic application. This paper reviews the preparation methods, the important features, advantages and limitation for the lanthanum doped barium titanate. Thus, the phase purity and mixture selected also been review on the second part of the article. The article concludes with a brief discussion of the methods with good dielectric behavior. The objectives of this paper are to determine the selection of suitable preparation methods and the properties of the high-K dielectric based on pure barium titanate and lanthanum doped barium titanate.

Thick Film Capacitors with Variable Tc on Cu Foils

2008 ◽  
Vol 1075 ◽  
Author(s):  
Byeong Kon Kim ◽  
Dong Joo Shin ◽  
Jun Kwang Song ◽  
Yong Soo Cho
Keyword(s):  
Dielectric Constant ◽  
Dielectric Loss ◽  
Low Temperature ◽  
Thick Film ◽  
Dissipation Factor ◽  
Embedded Capacitors ◽  
High K ◽  
Dielectric Performance ◽  
Cu Foil ◽  
High K Dielectric

ABSTRACTHigh k dielectric thick films, consisting of BaTiO3, a low softening glass and fluoride compounds, were studied to apply them as potential low temperature N2-fireable capacitors on commercially-available Cu foils. Different additive combinations of LiF, ZnF2 and BaF2 were specifically compared in terms of dielectric constant, dielectric loss and Curie temperature (Tc) for the purpose of optimizing dielectric performance. The thick film consisting of 95BaTiO3-1.5LiF-1.5ZnF2-2 bismuth borosilicate glass exhibited the best performance, i.e., a dielectric constant of 2,382 and a dissipation factor of 0.021 at Tc of 27°C at the firing temperature of 950°C. This result can be regarded as one of the best performance, compared to literature reported on embedded capacitors in Cu-PCB applications. No apparent Cu-diffusion was detected across the Cu-thick film-Cu foil structure.

Sub-20nm Device Voltage-Sensitive SRAM Characterization and Failure Analysis

2018 ◽  
Author(s):  
Seng Nguon Ting ◽  
Hsien-Ching Lo ◽  
Donald Nedeau ◽  
Aaron Sinnott ◽  
Felix Beaudoin
Keyword(s):  
Failure Analysis ◽  
High Performance ◽  
Yield Loss ◽  
Technology Development ◽  
High Density ◽  
High K ◽  
Yield Learning ◽  
Oxide Deposition ◽  
Edge Profile ◽  
High K Dielectric

Abstract With rapid scaling of semiconductor devices, new and more complicated challenges emerge as technology development progresses. In SRAM yield learning vehicles, it is becoming increasingly difficult to differentiate the voltage-sensitive SRAM yield loss from the expected hard bit-cells failures. It can only be accomplished by extensively leveraging yield, layout analysis and fault localization in sub-micron devices. In this paper, we describe the successful debugging of the yield gap observed between the High Density and the High Performance bit-cells. The SRAM yield loss is observed to be strongly modulated by different active sizing between two pull up (PU) bit-cells. Failure analysis focused at the weak point vicinity successfully identified abnormal poly edge profile with systematic High k Dielectric shorts. Tight active space on High Density cells led to limitation of complete trench gap-fill creating void filled with gate material. Thanks to this knowledge, the process was optimized with “Skip Active Atomic Level Oxide Deposition” step improving trench gap-fill margin.

A Substitution for the High- k Dielectric in an AlGaN/GaN Metal-insulator-Semiconductor Heterostructure

2012 ◽  
Vol 29 (5) ◽  
pp. 057702 ◽  
Author(s):  
Yue-Chan Kong ◽  
Fang-Shi Xue ◽  
Jian-Jun Zhou ◽  
Liang Li ◽  
Chen Chen ◽  
...  
Keyword(s):  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Semiconductor Heterostructure ◽  
High K ◽  
High K Dielectric

Polysilicon Nanowire Sensor Devices Based on High-k Dielectric Membrane for pH Sensing and DNA Detection

2012 ◽  
Vol 45 (3) ◽  
pp. 537-542 ◽  
Author(s):  
C.-Y. Wu ◽  
P.-Y. Hsu ◽  
C. L. Wang ◽  
T.-C. Liao ◽  
H.-C. Cheng ◽  
...  
Keyword(s):  
Dna Detection ◽  
Ph Sensing ◽  
High K ◽  
Sensor Devices ◽  
Nanowire Sensor ◽  
High K Dielectric

Improved Switching Characteristics Obtained by Using High-k Dielectric Layers in 4H-SiC IGBT: Physics-Based Simulation

2017 ◽  
Vol 897 ◽  
pp. 571-574 ◽  
Author(s):  
Vidya Naidu ◽  
Sivaprasad Kotamraju
Keyword(s):  
Switching Frequency ◽  
Power Losses ◽  
Switching Power ◽  
Mos Devices ◽  
High K ◽  
High Switching Frequency ◽  
Switching Characteristics ◽  
High K Dielectric ◽  
Current Duration ◽  
Physics Based Simulation

Silicon Carbide (SiC) based MOS devices are one of the promising devices for high temperature, high switching frequency and high power applications. In this paper, the static and dynamic characteristics of an asymmetric trench gate SiC IGBT with high-k dielectrics- HfO2 and ZrO2 are investigated. SiC IGBT with HfO2 and ZrO2 exhibited higher forward transconductance ratio and lower threshold voltage compared to conventionally used SiO2. In addition, lower switching power losses have been observed in the case of high-k dielectrics due to reduced tail current duration.

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