Polysilicon Nanowire Sensor Devices Based on High-k Dielectric Membrane for pH Sensing and DNA Detection

2012 ◽  
Vol 45 (3) ◽  
pp. 537-542 ◽  
Author(s):  
C.-Y. Wu ◽  
P.-Y. Hsu ◽  
C. L. Wang ◽  
T.-C. Liao ◽  
H.-C. Cheng ◽  
...  
Keyword(s):  
Dna Detection ◽  
Ph Sensing ◽  
High K ◽  
Sensor Devices ◽  
Nanowire Sensor ◽  
High K Dielectric

scholarly journals High-k dielectric Al2O3 nanowire and nanoplate field effect sensors for improved pH sensing

2011 ◽  
Vol 13 (2) ◽  
pp. 335-344 ◽  
Author(s):  
Bobby Reddy ◽  
Brian R. Dorvel ◽  
Jonghyun Go ◽  
Pradeep R. Nair ◽  
Oguz H. Elibol ◽  
...  
Keyword(s):  
Field Effect ◽  
Ph Sensing ◽  
High K ◽  
High K Dielectric

Sub-20nm Device Voltage-Sensitive SRAM Characterization and Failure Analysis

2018 ◽  
Author(s):  
Seng Nguon Ting ◽  
Hsien-Ching Lo ◽  
Donald Nedeau ◽  
Aaron Sinnott ◽  
Felix Beaudoin
Keyword(s):  
Failure Analysis ◽  
High Performance ◽  
Yield Loss ◽  
Technology Development ◽  
High Density ◽  
High K ◽  
Yield Learning ◽  
Oxide Deposition ◽  
Edge Profile ◽  
High K Dielectric

Abstract With rapid scaling of semiconductor devices, new and more complicated challenges emerge as technology development progresses. In SRAM yield learning vehicles, it is becoming increasingly difficult to differentiate the voltage-sensitive SRAM yield loss from the expected hard bit-cells failures. It can only be accomplished by extensively leveraging yield, layout analysis and fault localization in sub-micron devices. In this paper, we describe the successful debugging of the yield gap observed between the High Density and the High Performance bit-cells. The SRAM yield loss is observed to be strongly modulated by different active sizing between two pull up (PU) bit-cells. Failure analysis focused at the weak point vicinity successfully identified abnormal poly edge profile with systematic High k Dielectric shorts. Tight active space on High Density cells led to limitation of complete trench gap-fill creating void filled with gate material. Thanks to this knowledge, the process was optimized with “Skip Active Atomic Level Oxide Deposition” step improving trench gap-fill margin.

A Substitution for the High- k Dielectric in an AlGaN/GaN Metal-insulator-Semiconductor Heterostructure

2012 ◽  
Vol 29 (5) ◽  
pp. 057702 ◽  
Author(s):  
Yue-Chan Kong ◽  
Fang-Shi Xue ◽  
Jian-Jun Zhou ◽  
Liang Li ◽  
Chen Chen ◽  
...  
Keyword(s):  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Semiconductor Heterostructure ◽  
High K ◽  
High K Dielectric

Improved Switching Characteristics Obtained by Using High-k Dielectric Layers in 4H-SiC IGBT: Physics-Based Simulation

2017 ◽  
Vol 897 ◽  
pp. 571-574 ◽  
Author(s):  
Vidya Naidu ◽  
Sivaprasad Kotamraju
Keyword(s):  
Switching Frequency ◽  
Power Losses ◽  
Switching Power ◽  
Mos Devices ◽  
High K ◽  
High Switching Frequency ◽  
Switching Characteristics ◽  
High K Dielectric ◽  
Current Duration ◽  
Physics Based Simulation

Silicon Carbide (SiC) based MOS devices are one of the promising devices for high temperature, high switching frequency and high power applications. In this paper, the static and dynamic characteristics of an asymmetric trench gate SiC IGBT with high-k dielectrics- HfO2 and ZrO2 are investigated. SiC IGBT with HfO2 and ZrO2 exhibited higher forward transconductance ratio and lower threshold voltage compared to conventionally used SiO2. In addition, lower switching power losses have been observed in the case of high-k dielectrics due to reduced tail current duration.

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